Browsing by Author "Liao, Hsiu-Hsien"

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Degradation Mechanism of Ge N+-P Shallow Junction With Thin GeSn Surface Layer
(2020-03-01)
Tsui, Bing-Yue
;
Liao, Hsiu-Hsien
;
Chen, Yi-Ju
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this article, the degradation mechanism of the Ge N+-P junctions with a thin GeSn surface layer is investigated, aiming for source/drain (S/D) application in emerging field-effect transistors. GeSn is a promising channel material with high carrier mobility, which can offer a better performance of the field-effect transistors. By performing thermal annealing at different temperatures, the reverse-biased leakage current increases apparently when annealing temperature exceeds 550 degrees C. X-ray diffraction (XRD) analysis indicates most Sn atoms escape from lattice sites while secondary-ion mass spectroscopy (SIMS) analysis indicates enhanced Sn diffusion in Ge bulk after ion implantation. Therefore, a degradation model considering Sn-defects interaction is proposed to explain the degradation of junction leakage current and possible solution is proposed.
Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer
(2019-01-01)
Liao, Hsiu-Hsien
;
Chen, Yi-Ju
;
Tsui, Bing-Yue
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Thermal stability of the Ge N' -P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thernial annealing higher than 500 C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.
Well-behaved Ge n(+)/p shallow junction achieved by plasma immersion ion implantation
(2020-10-01)
Chen, Yi-Ju
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Liao, Hsiu-Hsien
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Tsui, Bing-Yue
;
Lee, Yao-Jen
;
Wang, Chih-Jen
Ge n(+)/p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n(+)/p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 degrees C annealing, well-behaved Ge n(+)/p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 degrees C annealing, best Ge n(+)/p junction performance with current on/off ratio-9 x 10(5) and ideality factor-1.07 is achieved by PIII.