Browsing by Author "Liao, Jin-Chien"

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Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
(2017-12-31)
Lin, Chien-Yu
;
Chang, Ting-Chang
;
Liu, Kuan-Ju
;
Chen, Li-Hui
;
Chen, Ching-En
This research investigates the mechanism of abnormal transconductance (Gm) and abnormal charge pumping current (I-CP) in body-tied partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. The I-CP second hump region increases with channel length, yet is not affected by channel width. The cross-sectional view of the L-gate structure along the width direction demonstrates that a part of the poly gate area near the body contact is covered by a P+ implant, inducing a parasitic channel under the P+ poly gate. This parasitic channel leads to the abnormal Gm and I-CP hump, and such mechanism is further verified by body floating devices.
Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs
(2017-06-01)
Lin, Chien-Yu
;
Chang, Ting-Chang
;
Liu, Kuan-Ju
;
Chen, Li-Hui
;
Tsai, Jyun-Yu
This letter studies the effects of hot carrier stress (HCS) in laterally diffused silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. After HCS, threshold voltage and subthreshold swing degrade, while the ON-state current exhibits degradation after an abnormal spike due to hole trapping in the resistprotective oxide. Impact ionization simulation shows that low doping concentrations in the drift region cause a severe Kirk effect under HCS and more severe degradation at higher gate voltages. However, degradation in the channel contrasts with the simulation result, which suggests an additional mechanism. Variable temperature HCS confirms that channel degradation is instead dominated by temperature.