Browsing by Author "Liao, Kao-Feng"

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Vertically well-aligned epitaxial Ni(31)Si(12) nanowire arrays with excellent field emission properties
(2008-09-15)
Lee, Chung-Yang
;
Lu, Ming-Pei
;
Liao, Kao-Feng
;
Wu, Wen-Wei
;
Chen, Lih-Juann
Vertically well-aligned single crystal Ni(31)Si(12) nanowire (NW) arrays were epitaxially grown on Ni(31)Si(12) films preferentially formed on Ni foil substrates with a simple vapor phase deposition method in one step. The Ni(31)Si(12) NWs are several micrometers in length and 50-80 nm in diameter. The resistivities of the Ni(31)Si(12) NWs were measured to be 51 mu Omega cm by four-terminal electrical measurement. The NWs can carry very high currents and possess excellent field emission properties. The growth of vertically well-aligned Ni(31)Si(12) NW arrays shall lead to significant advantages in the fabrication of vertical Si nanodevices. (C) 2008 American Institute of Physics.