Browsing by Author "Liao, Kuo-Hsiang"

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Characterization of Annular-Structure RF LDMOS Transistors Using Polyharmonic Distortion Model
(2009)
Chiu, Chia-Sung
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Chen, Kun-Ming
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Huang, Guo-Wei
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Hsiao, Chih-Hua
;
Liao, Kuo-Hsiang
An annular-structure lateral-diffused metal-oxide semiconductor (LDMOS) RF transistor with polyharmonic distortion (PHD) model characterized by nonlinear vector network analyzer is described in this paper. The devices were fabricated using a 0.5 mu m LDMOS process. The DC, small-signal, and large-signal characteristics of RF LDMOS transistors with annular-structures were also studied in this work. Using the PHD model, the accuracy of intermodulation and time waveform is verified. Furthermore, the model via X-parameter shows good agreement without optimization.
Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications
(2010-04-01)
Wang, Sheng-Chun
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Su, Pin
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Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter-wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency.
Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
(2010-09-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (f(t) and f(max)) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f(max) than f(t). Besides, we found that the noise stemmed from the body resistance (R(b)) would contribute to the output noise current, and degrade the minimum noise figure (NF(min)). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.