Browsing by Author "Liao, M"

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Enhanced metalorganic chemical vapor deposition titanium nitride film fabricated using tetrakis-dimethylamino-titanium for barrier metal application in sub-half-micron technology
(1996-08-01)
Wang, CK
;
Liu, LM
;
Liao, M
;
Cheng, HC
;
Lin, MS
Enhanced metalorganic chemical vapor deposition (MOCVD) titanium nitride (TiN:C) film with low resistivity (< 700 mu Omega . cm) has been fabricated by thermal decomposition of tetrakis-dimethylamino-titanium (TDMAT; Ti[N(CH3)(2)](4)) Enhancement is carried out by in-situ N-2 plasma treatment of as-deposited TiN:C film and the enhanced TiN:C film has good stability: less than 4% increase in film resistivity after exposure to air for 24 days. The amount of oxygen absorbed in this enhanced TiN:C film after air exposure, determined by Auger electron spectroscopy (AES) was significantly reduced. This enhanced MOCVD TiN:C film has been successfully applied to sub-half-micron devices. A void-tree tungsten plug (W plug) for sub-half-micron holes can be achieved. Good barrier performance and low contact/via resistance have also been demonstrated.
Enhanced metalorganic chemical vapor deposition titanium nitride film fabricated using tetrakis-dimethylamino-titanium for barrier metal application in sub-half-micron technology
(1996-08-01)
Wang, CK
;
Liu, LM
;
Liao, M
;
Cheng, HC
;
Lin, MS
Enhanced metalorganic chemical vapor deposition (MOCVD) titanium nitride (TiN:C) film with low resistivity (< 700 mu Omega . cm) has been fabricated by thermal decomposition of tetrakis-dimethylamino-titanium (TDMAT; Ti[N(CH3)(2)](4)) Enhancement is carried out by in-situ N-2 plasma treatment of as-deposited TiN:C film and the enhanced TiN:C film has good stability: less than 4% increase in film resistivity after exposure to air for 24 days. The amount of oxygen absorbed in this enhanced TiN:C film after air exposure, determined by Auger electron spectroscopy (AES) was significantly reduced. This enhanced MOCVD TiN:C film has been successfully applied to sub-half-micron devices. A void-tree tungsten plug (W plug) for sub-half-micron holes can be achieved. Good barrier performance and low contact/via resistance have also been demonstrated.