Browsing by Author "Liao, Wei-Hsiang"

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A Study on the Plating and Wetting Ability of Ruthenium-Tungsten Multi-layers for Advanced Cu Metallization
(2016-01-01)
Kuo, Tai-Chen
;
Su, Yin-Hsien
;
Lee, Wen-Hsi
;
Liao, Wei-Hsiang
;
Wang, Yu-Sheng
In this study, the plating and wetting ability of Cu/Ruthenium-Tungsten (RuW)/silicon oxide (SiO2) multi-layer stacks were investigated. RuW alloy films were prepared on a SiO2 layer by sputtering, followed by a deposition of a Cu thin film by electroplating. Scanning electron microscopy (SEM) top view images shows that Cu films can be electroplated on RuW, with smaller Cu nuclei size but in a more highly concentrated and uniform distribution than Cu films electroplated on Ta or TaN. The rate of Cu nucleation decreases and larger Cu clusters were formed on the RuW alloy films with increasing W content. Cu/RuW/SiO2 samples were annealed at 400 degrees C for 30 min and then characterized using SEM. There were fewer pin holes on the surface of a pure Cu/Ru stack compared to Cu/RuW multilayers. Cu/RuW/SiO2 multi-layers had fewer pin holes than Cu/Ta/SiO2 structures processed under similar conditions. The wetting angle, measured by SEM, of Cu on a RuW substrate (43 degrees) was still lower than that of Cu on a Ta substrate (123 degrees), which suggests that the adhesion strength of Cu onto RuW alloy is better than that onto Ta.
A study on the plating and wetting ability of ruthenium-tungsten multi-layers for advanced Cu metallization
(2016-08-16)
Kuo, Tai-Chen
;
Su, Yin-Hsien
;
Lee, Wen-Hsi
;
Liao, Wei-Hsiang
;
Wang, Yu-Sheng
In this study, the plating and wetting ability of Cu/Ruthenium-Tungsten (RuW)/silicon oxide (SiO2) multi-layer stacks were investigated. RuW alloy films were prepared on a SiO2 layer by sputtering, followed by a deposition of a Cu thin film by electro-plating. Scanning electron microscopy (SEM) top view images shows that Cu films can be electroplated on RuW, with smaller Cu nuclei size but in a more highly concentrated and uniform distribution than Cu films electroplated on Ta or TaN. The rate of Cu nucleation decreases and larger Cu clusters were formed on the RuW alloy films with increasing W content. Cu/RuW/SiO2 samples were annealed at 400 degrees C for 30 min and then characterized using SEM. There were fewer pin holes on the surface of a pure Cu/Ru stack compared to Cu/RuW multilayers. Cu/RuW/SiO2 multi -layers had fewer pin holes than Cu/Ta/SiO2 structures processed under similar conditions. The wetting angle, measured by SEM, of Cu on a RuW substrate (43) was still lower than that of Cu on a Ta substrate (123 degrees), which suggests that the adhesion strength of Cu onto RuW alloy is better than that onto Ta. Preliminary studies of Cu diffusion through 25 nm RuW layers at 650 degrees C showed no Cu penetration into the underlying Si in a Cu/RuW/Si multi-layer test structure. (C) 2016 Elsevier B.V. All rights reserved.
Investigation of Curtain Mura in TFT-TN panels after COG ACF process
(2012-10-01)
Wang, Sheng-Ya
;
Liao, Wei-Hsiang
;
Yang, Kei-Hsiung
;
光電系統研究所
;
影像與生醫光電研究所
We have utilized a transmission ratio (TR) between curtain-shaped (Curtain) Mura and non-Mura zones as a key parameter to characterize the optical appearance of Curtain Mura occurred on a 13.3-in TFT-TN panel (Mura sample) after bonding process to place silicon-based driver-IC chips on one of the panel substrates using anisotropic conductive film as a binder (COG ACF process). Our measured TRs of the Mura sample at zero applied voltage were in good agreement with calculated TRs using optical parameters of the Mura sample derived from the measured Stokes parameters of the liquid crystal (LC) medium in that sample. We conclude that the occurrence of Curtain Mura is dominant by the stress-induced change in the twist angle, less sensitive and insensitive to the corresponding induced changes in the cell gap and pretilt angle of the in-panel-LC medium, respectively. By simulation, we also point out a way to reduce the occurrence of Curtain Mura by designing the cell gap for a 90 degrees-twsit TN panel to satisfy the condition of Gooch-Terry first minimum. (C) 2012 Elsevier B.V. All rights reserved.