Browsing by Author "Liao, Wen-Hsuan"

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In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation
(2010-11-01)
Chung, Tung-Hsun
;
Chen, Shu-Han
;
Liao, Wen-Hsuan
;
Lin, Shih-Yen
;
光電工程學系
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the electrical terminals of the device. Without exposing the channel region to the atmosphere, the device has exhibited standard transistor current-voltage characteristics in the 0-5 V range at room temperature, which may be advantageous for the future high-speed application of the device.
Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
(2010-07-23)
Lin, Shih-Yen
;
Tseng, Chi-Che
;
Chung, Tung-Hsun
;
Liao, Wen-Hsuan
;
Chen, Shu-Han
Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).
The fabrication of nanomesas and nanometal contacts by using atomic force microscopy lithography
(2010-11-01)
Chung, Tung-Hsun
;
Liao, Wen-Hsuan
;
Lin, Shih-Yen
;
光電工程學系
;
Department of Photonics
The influence of preoxidation GaAs surface treatment over the atomic force microscopy-induced local anodic oxidation (LAO) is investigated in this paper. By immerging the GaAs samples into NaOH aqueous solutions, higher nano-oxides with better height distribution could be observed after LAO. The phenomenon is attributed to the hydrophilic surfaces obtained after the treatment such that higher local humidity and uniform water molecular distribution would be obtained on the GaAs surfaces, by using the higher nano-oxides with better height uniformity, nanomesas by using wet chemical etching, and nanometal contact after oxide lift-off are fabricated. (C) 2010 American Institute of Physics. [doi:10.1063/1.3504654]
The fabrication of nanomesas and nanometal contacts by using atomic force microscopy lithography
(2010-11-01)
Chung, Tung-Hsun
;
Liao, Wen-Hsuan
;
Lin, Shih-Yen
;
光電工程學系
;
Department of Photonics
The influence of preoxidation GaAs surface treatment over the atomic force microscopy-induced local anodic oxidation (LAO) is investigated in this paper. By immerging the GaAs samples into NaOH aqueous solutions, higher nano-oxides with better height distribution could be observed after LAO. The phenomenon is attributed to the hydrophilic surfaces obtained after the treatment such that higher local humidity and uniform water molecular distribution would be obtained on the GaAs surfaces, by using the higher nano-oxides with better height uniformity, nanomesas by using wet chemical etching, and nanometal contact after oxide lift-off are fabricated. (C) 2010 American Institute of Physics. [doi:10.1063/1.3504654]