Browsing by Author "Liao, Y. L."

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InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers
(2006-09-01)
Li, A.
;
Liu, S. C.
;
Su, K. W.
;
Liao, Y. L.
;
Huang, S. C.
We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.