Browsing by Author "Liao, YC"

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A dynamic normalization technique for decoding LDPC codes
(2005)
Liao, YC
;
Lin, CC
;
Liu, CW
;
Chang, HC
;
電子工程學系及電子研究所
In this paper, a dynamic normalization technique is proposed to approximate the nonlinear operation in decoding LDPC codes. The criterion in determining the normalization factor is also presented with theoretical analysis. The proposed method improves the approximation accuracy as well as the error performance of min-sum algorithm. Furthermore, the hardware implementation benefits from a simplified normalization scheme, leading to reductions in complexity and implementation loss.
Cu contamination effect in oxynitride gate dielectrics
(2001-11-01)
Lin, YH
;
Pan, FM
;
Liao, YC
;
Chen, YC
;
Hsieh, IJ
We have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy. (C) 2001 The Electrochemical Society.
Deposition of silicon carbon nitride films by ion beam sputtering
(1999-11-01)
Wu, JJ
;
Wu, CT
;
Liao, YC
;
Lu, TR
;
Chen, LC
Silicon carbon nitride films have been successfully synthesized at a temperature below 100 degrees C from an adenine(C5N5H5)-silicon-mixed target sputtered by Ar ion beam. The effects of Ar ion sputtering voltage, area ratio of Si to adenine in the mixed target and nitrogen atom addition during deposition on the film growth are investigated. XPS, XRD, and ellipsometry were employed to characterize the composition, chemical bonding, structure, and optical property of the films. The growth characteristic and film properties of the silicon carbon nitride films are also compared with those of the carbon nitride films deposited from an adenine target to elucidate the effect of silicon incorporation. The silicon content of the resultant films increased significantly as the area ratio of Si to adenine increased, whereas a higher Ar ion voltage led to a lower level of silicon incorporation, presumably due to differential sputtering yield of Si and adenine. XPS chemical stare analysis revealed multiple bonding structures for every element in the SiCN films, of which possible implications are given. XRD studies showed that only amorphous films for Si-rich SiCN were obtained, while the films with low Si incorporation and deposited at high Ar ion beam voltage contained nanocrystallites. Furthermore, the: refractive index of the SiCN films increased with increasing silicon content. The appearance of the nanocrystalline structure in the films led to a reduction in the refractive index. (C) 1999 Elsevier Science S.A. All rights reserved.
Magnetic field dependence of low-temperature specific heat of the spinel oxide superconductor LiTi2O4
(2004-08-01)
Sun, CP
;
Lin, JY
;
Mollah, S
;
Ho, PL
;
Yang, HD
Magnetic field dependence of low temperature specific heat of spinel oxide superconductor LiTi2O4 has been elaborately investigated. In the normal state, the obtained electronic coefficient of specific heat gamma(n)=19.15 mJ/mol K-2, the Debye temperature Theta(D)=657 K and some other parameters are compared with those reported earlier. The superconducting transition at T(c)similar to11.4 K is very sharp (DeltaT(c)similar to0.3 K) and the estimated deltaC/gamma(n)T(c) is similar to1.78. In the superconducting state, the best fit of data leads to the electronic specific heat C-es/gamma(n)T(c)=9.87 exp(-1.58 T-c/T) without field and gamma(H)proportional toH(0.95) with fields. In addition, H-c2(0)similar to11.7 T, H-c(0)similar to0.32 T, xi(GL)(0)similar to55 A, lambda(GL)(0)similar to1600 Angstrom, and H-c1(0)similar to26 mT are estimated from the Werthamer-Helfand-Hohenberg (WHH) theory or other relevant relations. All results from the present study indicate that LiTi2O4 can be well described by a typical type-II, BCS-like, moderate coupling, and fully gapped superconductor in the dirty limit. It is further suggested that LiTi2O4 is a moderately electron-electron correlated system.