Browsing by Author "Liao, Yu-Sheng"

Now showing 1 - 19 of 19

22-channel capacity of 2.5Gbit/s DWDM-PON ONU transmitter by direct-modularly side-mode injection locked FPLD
(2007-01-01)
Liao, Yu-Sheng
;
Chen, Yung-Jui
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
22-channel detuning capacity of a 2.5Gbit/s directly modulated FPLD based ONU under side-mode injection-locking for DWDM-PON is demonstrated with SMSR >35dB, Q-factor 6.8-9.2, locking range of 24nm, power penalty of -0.7dB, and BER of 10(-10) at -17dBm. The demonstrated side-mode injection-locked FPLD is a potential candidate to achieve the cost effective and high capability 2.5Gbit/s DWDM-PON systems. The maximum usable ONU channels of the side-mode injection-locking FPLD are 22, corresponding to a wavelength locking range of 24 nm. Direct modulation of the upstream channels was successfully obtained and shows high quality eye diagram at ONU transmission.
22-channel capacity of 2.5Gbit/s DWDM-PON ONU transmitter by direct-modularly side-mode injection locked FPLD - art. no. 67832L
(2007)
Liao, Yu-Sheng
;
Chen, Yung-Jui
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
22-channel detuning capacity of a 2.5Gbit/s directly modulated FPLD based ONU under side-mode injection-locking for DWDM-PON is demonstrated with SMSR >35dB, Q-factor 6.8-9.2, locking range of 24nm, power penalty of -0.7dB, and BER of 10(-10) at -17dBm. The demonstrated side-mode injection-locked FPLD is a potential candidate to achieve the cost effective and high capability 2.5Gbit/s DWDM-PON systems. The maximum usable ONU channels of the side-mode injection-locking FPLD are 22, corresponding to a wavelength locking range of 24 nm. Direct modulation of the upstream channels was successfully obtained and shows high quality eye diagram at ONU transmission.
A Novel Anti-Reflecton Coated FP Laser Amplifier for 2.5Gbit/s DWDM-PON Transmission
(2007)
Liao, Yu-Sheng
;
Chen, Yung-Jui
;
Huang, Yin-Hsun
;
Wang, Hai-Lin
;
Ko, Sun-Chien
A novel anti-reflection coated Fabry-Perot laser amplifier under side-mode injection-locking for 2.5Gbit/s DWDM-PON is demonstrated with SMSR >35dB, Q-factor 9.2, locking range of 30nm, power penalty of -0.7dB, and BER of 10(-12) at -23.7dBm. (c) 2007 Optical Society of America
A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission
(2012-06-18)
Lin, Gong-Ru
;
Chi, Yu-Chieh
;
Liao, Yu-Sheng
;
Kuo, Hao-Chung
;
Liao, Zhi-Wang
By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down-and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bidirectional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate <10(-10) is -25.6 dBm, and the power penalty added after 25-km transmission is less than 2 dB for all 16 channels. (C) 2012 Optical Society of America
All-optical decision-gating of 10-Gb/s RZ data in a semiconductor optical amplifier temporally gain-shaped with dark-optical-comb
(2007-07-01)
Lin, Gong-Ru
;
Yu, Kun-Chieh
;
Pan, Ci-Ling
;
Liao, Yu-Sheng
;
光電工程學系
We demonstrate a novel all-optical noninverted OC-192 return-to-zero (RZ) decision-gate by using a semiconductor optical amplifier (SOA) which is gain-controlled to achieve an extremely high cross-gain-modulation depth and a narrow gain window. A dark-optical-comb generated by reshaping the optical clock RZ data in a Mach-Zehnder intensity modulator is employed as an injecting source to temporally deplete most of the gain in the SOA. Such a dark-optical-comb injected SOA decision-gate exhibits improved 311 regeneration performances such as a timing tolerance of 33.5 ps, a Q-factor of 8.1, an input dynamical tolerance of 14 dB, and an extinction ratio (ER) of 14 dB. The deviation between the wavelengths of backward injected dark-optical-comb and input RZ data for optimizing the ER of the decision-gate is determined as Delta lambda = 19 nm. Under a threshold operating dark-optical-comb power of 7 dBm, such a decision-gate can recover the - 18.5-dBm degraded RZ data with a bit-error-rate of less than 10(-9) at 10 Gb/s. A negative power penalty of -4.2 dB is demonstrated for the RZ data after 50-km propagation and decision gating.
All-Optical OC-192 RZ data decision gating in dark optical comb injected semiconductor optical amplifier
(2006-01-01)
Liao, Yu-Sheng
;
Yu, Kun-Chieh
;
Lin, Gong-Ru
;
光電工程學系
;
光電工程研究所
We demonstrate a novel all-optical RZ decision gate by using one dark-optical-comb injected SOA which is controlled by a reshaped optical clock with extremely high cross-gain-modulation (XGM) depth and narrow gain window. Such a decision gate exhibits improved 3R regeneration performances including timing tolerance of 33.5 ps, Q factor of 8.1 and extinction ratio of 13.6 dB. The correlation between backward injected dark-comb and input data wavelength region for optimizing the extinction ratio of the decision gated RZ data is determined. Under a threshold operating dark-optical comb power of 7 dBm, such a decision gate can recover the degraded RZ data with a bit-error-rate of less than 10(-9) at 10 Gbits/s.
Comparison on the sensitivity of fiber-optic SONET OC-48PIN-TIAs measured by using synchronous modulation intermixing technique and bit error rate tester
(2006-12-01)
Liao, Yu-Sheng
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
A novel synchronous modulation and intermixing (SMIM) technique is presented to measure the sensitivity and evaluate the bit error rate (BER) of p-i-n photodiode receivers with transimpedance amplifiers (PIN-TIAs) without using any BER tester (BERT). When using the SMIM technique, the premier receiving measurement performance from the data rates of the synchronous optical network OC-3 to OC-48 was demonstrated. For general TO-46 packaged PIN-TIAs; a minimum intermixed voltage of 12.5 mV obtained by the SMIM method is equivalent to a sensitivity of -31 dBm at a requested BER of < 10(-10) determined by BERT. The relationship between the monitoring voltage and the BER of the optical pattern received by the PIN-TIA and limited amplifier is estimated. The error of the measured voltage is 0.28 mV, which corresponds to the error sensitivity of 0.09 dB. This would show the accuracy of the simplified and low-cost SMIM technique for in situ diagnostics on a mass-production line.
Coupling-ratio controlled wavelength tunability of a power conversion efficiency improved L-band Erbium-doped fiber laser
(2006-01-01)
Lin, Gong-Ru
;
Chang, Jun-Yuan
;
Liao, Yu-Sheng
;
Lu, Hai-Han
;
光電工程學系
A coupling-ratio controlled wavelength tunable L-band erbium-doped fiber laser with tuning range of 45nm (1567 1612 nm), quantum efficiency of 42%, power conversion efficiency of 37%, tuning resolution of 0.3 mn is reported. The wavelength-tuning is achieved by a tunable band-pass filter (TBPF) or by adjusting the tunable-ratio optical coupler (TROC) without TBPF because of the difference of intracavity loss. The output wavelength can be tunable in the full L-band with TBPF, from 1567 to 1612 nm, and the pulse-width is < 14.2 ps. Specially, during the wavelength-tunable process without TBPF, the modulation frequency of about 1 GHz remains unchanged and near-transform-limited pulses are generated by linear compression with 32.5 in single mode fiber (SMF) under 10% output coupling ratio.
Duty-Cycle and Chirp Diagnosis of All-Optical Format Conversion Data in Multi- and Single-Wavelength Inverse Optical Comb Injected Semiconductor Optical Amplifier
(2007)
Yu, Kun-Chieh
;
Liao, Yu-Sheng
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
Comparison on shortened falling-time, reduced chirp and improved on/off extinction ratio of 10Gbit/s all-optical data-format converted pulse-stream in single- and multi-wavelength inverse-optical-comb injected semiconductor optical amplifiers with temporally reshaped gain-window is demonstrated. (c) 2007 Optical Society of America
Dynamic Photocurrent Analysis of In-Situ p-i-n PD based Injection-Locking Monitor for Fabry-Perot Laser Diode Transmitter
(2008)
Liao, Yu-Sheng
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
An on-line monitoring and auto-restorable scheme for injection-locking of FPLD by using an integrated monitoring photodiode to achieve auto locking restoration in 50 seconds with Q factor >7 and SMSR >35 dB at 2.5 Gbit/s. (C)2008 Optical Society of America
Femtosecond harmonic optical-Injection mode-locked semiconductor optical amplifier based fiber lasers
(2006)
Liao, Yu-Sheng
;
Chiu, I-Shiang
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
A 30nm wavelength-tunable backward dark-optical-comb injection-mode-locked semiconductor optical amplifier fiber laser (SOAFL) with pedestal-free is reported after high-order soliton compression with maximum pulse compression ratio of up to 80. Shortest mode-locked SOAFL pulsewidth of 15 ps at 1 GHz is generated, which can further be compressed to 180 fs after linear chirp compensation, nonlinear soliton compression, and bireftingent filtering. The pedestal-free eighth-order soliton can be obtained by injecting the amplified pulse with peak power of 51 W into a 107.5m-long single-mode fiber (SMF), providing a linewidth and timebandwidth product of 13.8 mn and 0.31, respectively. The tolerance in SMF length is relatively large (100-300 m) for obtaining < 200fs SOAFL pulsewidth at wavelength tuning range of 1530-1560 mn. By extending the repetition frequency of dark-optical-comb up to 10 GHz, the mode-locked SOAFL pulsewidth can be slightly shortened from 5.4 ps to 3.9 ps after dispersion compensating, and further to 400 fs after second-order soliton compression. The lasing linewidth, time-bandwidth product and pulsewidth suppressing ratio of the SOAFL soliton become 4.5 nm, 0.33, and 10, respectively.
In Situ and Self-Restorable Injection-Locking Monitor by Integrated Photodiode for FPLD WDM Transmitter
(2011-01-01)
Lin, Gong-Ru
;
Liao, Yu-Sheng
;
Kuo, Hao-Chung
;
光電工程學系
;
Department of Photonics
A novel in situ self-restoration scheme to track real time the injection locking of a Fabry-Perot laser diode (FPLD) is demonstrated by a built-in integrated monitor photodiode (MPD). The variation in the received photocurrent of the integrated MPD was calculated by a microcontroller unit integrated with an analog-to-digital converter, which is employed to dynamically control the temperature of the FPLD via a thermal-electrical controller for wavelength stabilization. Such a scheme can be effectively implemented with a minimum amount of redundant network resources to achieve self-restoration within 50 s with Q factor >8.2 and side-mode suppression ratio >35 dB at 2.5 Gbit/s. The feasibility of the proposed self-restorable locker is suitable for most wavelength-locking FPLDs within high-speed wavelength-division multiplexing networks.
L-band Erbium-doped fiber laser with coupling-ratio controlled wavelength tunability
(2006-10-16)
Lin, Gong-Ru
;
Chang, Jun-Yuan
;
Liao, Yu-Sheng
;
Lu, Hai-Han
;
光電工程學系
By controlling the output coupling ratio, we demonstrate a novel wavelength-tunable L-band Erbium-doped fiber laser (EDFL) with a maximum tuning range up to 58 nm ( from 1567 to 1625 nm) by controlling its output coupling ratio between 1% and 99%. The L-band EDFL is configured by using a bi-directionally dual-wavelength pumped EDFA in close-loop with an output coupler of tunable coupling ratio and an air-gap inserted FC/PC connector pair. Such an EDFL exhibits a quantum efficiency of 42% and an ultra-high power conversion efficiency of 37% under optimized pumping scheme, providing the small-signal gain and output power of similar to 34 dB and 91 mW, respectively. Low variation of < 1.2 dB on channel power, power fluctuation of 0.04% and a narrow linewidth of 0.03 nm are obtained. (c) 2006 Optical Society of America
Long-Cavity Fabry-Perot Laser Amplifier Transmitter With Enhanced Injection-Locking Bandwidth for WDM-PON Application
(2010-10-15)
Lin, Gong-Ru
;
Liao, Yu-Sheng
;
Chi, Yu-Chieh
;
Kuo, Hao-Chung
;
Lin, Gong-Cheng
We simulate the injection-locking performance of a 1% antireflection coated Fabry-Perot laser amplifier (AR-FPLA) and demonstrate the 2.5-Gbit/s DWDM-PON application with the directly modulated AR-FPLA based ONU transmitter under side-mode injection-locking condition. The effect of the AR-FPLA front-facet reflectivity on the injection locking range detuning and the Q-factor are interpreted from theoretical simulations and are experimentally characterized. A 25-channel locking capacity is reported for such a side-mode injection-locked AR-FPLA with corresponding wavelength locking range of 30 nm, the minimal requested power of -7 dBm and gain extinction ratio of < 7 dB by reducing its front-facet reflectivity to 1%. At bit rate of 2.5 Gbit/s, the BER of 10(-12) is achievable for the nearest 17 channels of AR-FPLA at receiving power of -21 dBm, and all of the 25 injection-locked channels with SMSR of > 35 dB can guarantee the BER of < 10(-9) with their worst receiving sensitivity degrading to -19 dBm.
Pulsating master and injected slave weak-resonant-cavity laser diodes based quasi-color-free 2.5Gb/s RZ DWDM-PON
(2011-01-01)
Liao, Yu-Sheng
;
Chi, Yu-Chieh
;
Kuo, Hao-Chung
;
Lin, Gong-Ru
;
光電工程學系
The 25-km bi-directional 2.5Gb/s pulsed-RZ transmission in a quasi-color-free DWDM-PON with down-and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes (WRC-FPLDs) coherently injection-locking and pulsating by a gain-switched master WRC-FPLD after 200-GHz AWG channelization is demonstrated. (C) 2010 Optical Society of America
Self-seeding injection of anti-reflection coated FP laser amplifier based transmitters for wavelength division multiplexing PON
(2007-01-01)
Lin, Gong-Cheng
;
Ko, Sun-Chien
;
Huang, Yin-Hsun
;
Wang, Hai-Lin
;
Liao, Yu-Sheng
We experimentally demonstrate a directly modulated 1% AR-FPLA based ONU under side-mode injection-locking for 1.25Gbits/s DWDM-PON application. With side-mode injection of this device, the characterizes of 34-channel detuning capacity under self seeding and its corresponding to a wavelength locking range of 30 nm is a potential candidate to achieve the cost effective and high capability 1.25 Gbits/s DWDM-PON systems. The effects of the front-facet reflectivity in the AR-FPLA on injection locking range, spontaneous emission, and Q-factor are interpreted from our results. A BER of < 10(-12) is obtained for the nearest 17 channels and a 10(-10) error rate can be achieved for all of the 34 injection-locked channels with SMSR >35dB, providing a negative power penalty of -0.7 dB.
Side-mode transmission diagnosis of a multichannel selectable injection-locked Fabry-Perot Laser Diode with anti-reflection coated front facet
(2009-03-16)
Liao, Yu-Sheng
;
Kuo, Hao-Chung
;
Chen, Yung-Jui
;
Lin, Gong-Ru
;
光電工程學系
Theory and experiments on the side-mode-suppression-ratio (SMSR) enhancement and the linewidth reduction of a Fabry-Perot laser diode (FPLD) side-mode-injection-locked by using another FPLD are demonstrated to realize its potential application as a DWDM transmitter source. The SMSR, the spectral linewidth and the linewidth enhancement factor are simulated to realize the limitation of the FPLD-FPLD link under side-mode injection-locking condition. A degradation of the linewidth enhancement factor from 1.5 to 2.1 is observed due to the slave FPLD injection-locked at principle- and side-mode conditions. Up to 22-channel selectability of the 2.5 Gbit/s directly modulated FPLD based transmitter under side-mode injection-locking is demonstrated with a SMSR >35 dB, a Q-factor 6.8-9.2, a locking range of 24 nm, a power penalty of -0.7 dB, and a BER of 10(-10) at -17 dBm. The side-mode injection-locked FPLD shows high-quality transmission performance and meet the demand for cost-effective and high-capability 2.5 Gbit/s WDM systems. (C) 2008 Optical Society of America
Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
(2006-01-01)
Liao, Yu-Sheng
;
Lin, Gong-Ru
;
Kuo, Hao-Chung
;
Feng, Milton
;
光電工程學系
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4.10(-15) W/Hz(1/2), and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA center dot GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz center dot A/W) have been achieved.
Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190L
(2006)
Liao, Yu-Sheng
;
Lin, Gong-Ru
;
Kuo, Hao-Chung
;
Feng, Milton
;
光電工程學系
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4.10(-15) W/Hz(1/2), and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA center dot GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz center dot A/W) have been achieved.