Browsing by Author "Lien, Yu-Chung"

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3D Ferroelectric-like NVM/CMOS Hybrid Chip by sub-400 degrees C Sequential Layered Integration
(2012-01-01)
Lien, Yu-Chung
;
Shieh, Jia-Min
;
Huang, Wen-Hsien
;
Hsieh, Wei-Shang
;
Tu, Cheng-Hui
For the first time, a sequentially processed 3D hybrid chip is demonstrated by stacking low-temperature (LT) Ferroelectric-like (FE-like) metal-oxide nonvolatile memory (NVM) and CMOS. The high-mobility (333 and 113 cm(2)/V-s) and low-subthreshold swing (97 and 112 mV/decade) N/P-type thin film transistors (TFTs) construct stacked inverters showing sharp transfer characteristic as the fundamental element of CMOS array and stacked 3D NVMs. The sequential layered integration is enabled by cutting-edge low thermal-budget plasma/laser processes and self-assembled FE-like metal-oxide materials. The implementation of sub-400 degrees C new-type metal-ion (Eu+3)-mediated atomic-polar-structured (Eu+3-APS) dielectric realizes stackable FE-like NVMs with program speed of 100 nanosecond, toward future 3D layered CMOS with giant high-speed dat-storage application era.
Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing
(2012-04-02)
Lien, Yu-Chung
;
Shieh, Jia-Min
;
Huang, Wen-Hsien
;
Tu, Cheng-Hui
;
Wang, Chieh
The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 mu s under low operating voltages of +/-7V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700729]
Monolithic 3D Chip Integrated with 500ns NVM, 3ps Logic Circuits and SRAM
(2013)
Shen, Chang-Hong
;
Shieh, Jia-Min
;
Wu, Tsung-Ta
;
Huang, Wen-Hsien
;
Yang, Chih-Chao
For the first time, a sequentially processed sub-50nm monolithic 3D IC with integrated logic/NVM circuits and SRAM is demonstrated using multiple layers of ultrathin-body (UTB) MOSFET-based circuits interconnected through 300nm-thick interlayer dielectric (ILD). High-performance sub-50nm UTB MOSFETs using deposited ultra-flat and ultra-thin (20nm) epi-like Si enable across-layer and in-layer high-speed 3ps logic circuits and 1-T 500ns plasma-MONOS NVMs as well as 6T SRAMs with static noise margin (SNM) of 280 mV and reduced footprint by 25%. Closely stacked monolithic 3D circuits envision advanced high-performance, rich function, and low power intelligent mobile devices.
UV-Visible Light-Trapping Structure of Loosely Packed Submicrometer Silica Sphere for Amorphous Silicon Solar Cells
(2012-07-01)
Huang, Wen-Hsien
;
Shieh, Jia-Min
;
Pan, Fu-Ming
;
Shen, Chang-Hong
;
Lien, Yu-Chung
We synthesized a loosely packed submicrometer silica-sphere (LPSS) monolayer at room temperature and used the LPSS monolayer as the frontside light-trapping structure for n-i-p-type amorphous Si (a-Si) solar cells (SCs) to improve photovoltaic characteristics of the cells. The frontside LPSS monolayer plays a role as a UV-visible light scatter and a broadband antireflector; both can greatly improve the photoresponse of the underneath a-Si adsorbed layer. When the filling density of the LPSS layer is optimized to 65%, the enhancement in the photocurrent and conversion efficiency of the 120 degrees C-fabricated SCs is as high as similar to 15% and similar to 6.9%, respectively. Accordingly, such an LPSS light-trapping structure boosts efficiency of 120 degrees C- and 140 degrees C-fabricated cells to 7.3% and 8.5%, respectively. Since the LPSS structure has a graded refractive index profile, it behaves like a nearly omnidirectional antireflector, enhancing solar efficiency at a very large incident angle of illumination.