Browsing by Author "Lim, CG"
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Item type:Item, Impact of band gap shrinkage on simulated bifurcation routes in directly modulated semiconductor lasers(2006-02-15) ;Lim, CG ;Iezekiel, S ;Snowden, CM ;光電工程學系Department of PhotonicsA carrier heating model is derived by taking into account the various temperature processes in the active layer of laser diodes. This model is then used to simulate the static and dynamic characteristics of a directly modulated 1.55 mu m distributed-feedback laser diode. The calculated results are compared with the measured results of this device as obtained in an earlier work [H. F. Liu and W. F. Ngal, IEEE J. Quantum Electron. 29, 1668 (1993)], and this reveals the significant impact of band gap shrinkage on simulated results. This study also shows that the carrier heating model is a self-consistent model that naturally describes the gain suppression phenomena in directly modulated laser diodes. (c) 2006 American Institute of Physics.Item type:Item, Impact of thermal effects on simulation accuracy of nonlinear dynamics in semiconductor lasers(2005-09-01) ;Lim, CG ;Iezekiel, S ;Snowden, CM ;光電工程學系Department of PhotonicsSimulations based on a carrier heating model are performed to investigate the behavior of a directly modulated 1.55-mu m InGaAsP distributed feedback (DFB) laser diode (LD). Results show that bandgap shrinkage has a significant effect on the simulated nonlinear behavior of LDs. However, the varying nature of lattice temperature and excess carrier energy relaxation is important to produce simulated results that agree with measured results.