Browsing by Author "Lim, P. S."

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Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides
(2008-01-14)
Liu, Po-Tsun
;
Huang, Chen-Shuo
;
Lee, D. Y.
;
Lim, P. S.
;
Lin, S. W.
The dependence of the gate tunneling current (J(g)) on nitrogen profile (N profile) within an ultrathin silicon oxynitride film is reported. It was found that gate tunneling current is dependent on N profile, even with equal oxide thickness and nitrogen dosage. Gate tunneling current increased with steeper N profile, and it had higher sensitivity for p-type metal-oxide-semiconductor field-effect transistor (MOSFET) than n-type MOSFET. A direct tunneling model based on Wentzel-Kramers-Brillouin approximation has been proposed. The model described the influence of N profiles on gate tunneling current through local change of dielectric constant, band bending, and effective mass. Also, it reasonably explained the different J(g) sensitivity in n-/p-MOSFETs, a phenomenon that has not been addressed in earlier publications. (c) 2008 American Institute of Physics.
Novel Silicon Surface Pre-Treatment (SSPT) technique for CMOS device performance boosting
(2008-01-01)
Lee, Da-Yuan
;
Chen, C. C.
;
Huang, C. H.
;
Lim, P. S.
;
Chan, M. H.
In this paper, a novel surface treatment technique using Silicon Surface Pre-Treatment (SSPT) technique to boost high performance CMOS circuit is reported. This approach provides a smooth silicon surface and extends the effective channel width to enhance device performance on both N and PMOSFET. In this work, a smooth and rounded active area (AA) surface was successfully fabricated. Using this technique, we demonstrated a significant device boost of 15% and 7% on small dimension N and PMOSFET, respectively. These achievements were demonstrated without negative impact on GOI and NBTI.