Browsing by Author "Lim, Wee-Chin"

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An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
(2010-01-01)
Wang, Chin-Te
;
Kuo, Chien-I
;
Lim, Wee-Chin
;
Hsu, Li-Han
;
Hsu, Heng-Tung
The fabrication process of an 80 nm In(0.7)Ga(0.3)As MHEMT device with flip-chip packaging on Al(2)O(3) substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I(DS) = 425 mA/mm and high g(m) = 970 mS/mm at V(DS) = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF(min))below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In(0.7)Ga(0.3)As MHEMT device for low noise applications at W-band.
An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
(2010-01-01)
Wang, Chin-Te
;
Kuo, Chien-, I
;
Lim, Wee-Chin
;
Hsu, Li-Han
;
Hsu, Heng-Tung
The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I-DS = 425 mA/mm and high g(m) = 970 mS/mm at V-DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology
(2013-12-01)
Wang, Chin-Te
;
Hsu, Heng-Tung
;
Chiang, Che-Yang
;
Chang, Edward Yi
;
Lim, Wee-Chin
In this study, we have fabricated and characterized an In0.6Ga0.4As metamorphic high-electron-mobility transistor (mHEMT) device packaged using flip-chip-on-board (FCOB) technology. A low-cost polymer substrate was adopted as the carrier for cost-effective purposes. The impact of bonding temperature on the device performance was also experimentally investigated. While the DC performance was not as sensitive, serious degradation in RF performance was observed at high bonding temperature. Such degradation was mainly due to the thermal-mechanical stress resulting from the mismatch in the coefficient of thermal expansion (CTE) between the GaAs chip and the polymer substrate. Quantitative assessment was also performed through equivalent circuit extraction from S-parameter measurements. (C) 2013 The Japan Society of Applied Physics
Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz
(2012-03-01)
Hsu, Li-Han
;
Oh, Chee-Way
;
Wu, Wei-Cheng
;
Chang, Edward Yi
;
Zirath, Herbert
This paper presents a flip-chip-on-board (FCOB) packaging technology using a Rogers RO3210 laminate for microwave applications. Compared to the conventional microwave packaging architecture, the proposed FCOB technology skips one level of the ceramic package and thus results in lower reflections and manufacturing costs. To fulfill the small dimension requirement on printed circuit boards, the coplanar waveguide (CPW) transmission line and flip-chip bump were fabricated on a high-k RO3210 board (epsilon(r) = 10.2) with photolithography and electroplating. The GaAs chip patterned with the CPW line was then flip-chip-mounted onto the RO3210 laminate board. This structure displayed excellent performance from dc to 50 GHz with a return loss S-11 greater than 18 dB and insertion loss S-21 less than 0.5 dB. Meanwhile, the flip-chip bonding of the in-house-fabricated In0.52Al0.As-48/In0.6Ga0.4As metamorphic high-electron-mobility transistor devices on RO3210 also displayed excellent gain performance with a small degradation of 1 dB from dc to 40 GHz, showing the potential of implementing microwave integrated circuits on RO3210. To enhance the mechanical reliability, an epoxy-based underfill was injected into the flip-chip assemblies. Thermal cycling tests were performed to test the interconnect reliability, and the results indicated that the samples passed the thermal cycling test at least up to 600 cycles, showing excellent reliability for commercial applications. To the best of the authors' knowledge, this is the first study that evaluates the use of the RO3210 laminate for microwave flip-chip in open literature.
Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
(2011-09-01)
Wang, Chin-Te
;
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
Hsu, Li-Han
The rapid growth of high-frequency wireless communication demands high-performance packaging structures at low cost. A flip-chip interconnect is one of the most promising technologies owing to its low parasitic effect and high performance at high frequencies. In this study, the in-house fabricated In(0).(6)Ga(0.4)As metamorphic high electron mobility transistor (mHEMT) device was flip-chip-assembled using a commercially available low-cost organic substrate. The packaged device with the optimal flip-chip structure exhibited almost similar DC and RF results to the bare die. An exopy-based underfill was applied to the improvement of reliability with almost no degradation of the electrical characteristics. Measurement results revealed that the proposed packaging structure maintained a low minimum noise figure of 3 dB with 6 dB associated gain at 62 GHz. Such a superior performance after flip-chip packaging demonstrates the feasibility of the proposed low-cost organic substrate for commercial high-frequency applications up to the W-band. (C) 2011 The Japan Society of Applied Physics
Flip-Chip-Based Multichip Module for Low Phase-Noise V-Band Frequency Generation
(2010-09-01)
Hsu, Li-Han
;
Kuylenstierna, Dan
;
Kozhuharov, Rumen
;
Gavell, Marcus
;
Karnfelt, Camilla
This paper reports on a flip-chip (FC)-based multichip module (MCM) for low phase-noise (PN) V -band frequency generation. A high-performance x8 GaAs metamorphic high-electron mobility transistor monolithic microwave integrated circuit (MMIC) multiplier and a low PN 7-GHz GaAs InGaP heterojunction bipolar transistor (HBT) MMIC oscillator were used in the module. The microstrip MMICs were FC bonded to an Al(2)O(3) carrier with patterns optimized for low-loss transitions. The FC-based module was experimentally characterized to have a PN of -88 dBe/Hz @ 100-kHz offset and -112 dBc/Hz @ 1-MHz offset with an output power of 11 dBm. For comparison, the MMICs were also FC bonded as individual chips and the performance was compared with the bare dies without FC bonding. It was verified that the FC bonding has no detrimental effect on the MMIC performance. The tests revealed that the FC module provided improved performance. To our best knowledge, this is the first FC-based module for millimeter-wave frequency generation. The module also presents one of the best PN reported for millimeter-wave frequency sources.
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
(2010-12-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Wu, Chien-Ying
;
Chang, Edward Y.
;
Chen, Yu-Lin
Forty-nanometer lnAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from 395 GHz to 423 GHz was achieved with minimum noise figure below 2.5 dB up to 64 GHz at only 4.33 mW DC power consumption level. Besides, the output conductance was decreased from 2400 mS/ mm to 325 mS/mm. These superior performances are attributed to mitigation of the short-channel effect through the proposed technology. (C) 2010 Elsevier B.V. All rights reserved.