Browsing by Author "Lin, B. -H."

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A transition of three to two dimensional Si growth on Ge (100) substrate
(2012-12-15)
Tu, W. -H.
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Lee, C. -H.
;
Chang, H. T.
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Lin, B. -H.
;
Hsu, C. -H.
For the initial growth of Si on Ge, three-dimensional Si quantum dots grown on the Ge surface were observed. With increasing Si thickness, the Si growth changes from three-dimensional to two-dimensional growth mode and the dots disappear gradually. Finally, the surface is smooth with the roughness of 0.26 nm, similar to the original Ge substrate, when 15 nm Si is deposited. More Ge segregation on the wetting layer leads to more open sites to increase the subsequent Si growth rate on the wetting layer than on the Si dots. The in-plane x-ray diffraction by synchrotron radiation is used to observe the evolution of tensile strain in the Si layer grown on Ge (100) substrate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770408]
SiGe nanorings by ultrahigh vacuum chemical vapor deposition
(2009-04-06)
Lee, C. -H.
;
Shen, Y. -Y.
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Liu, C. W.
;
Lee, S. W.
;
Lin, B. -H.
Formation of SiGe nanorings from Si capped Si(0.1)Ge(0.9) quantum dots (QDs) grown at 500 degrees C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.