Browsing by Author "Lin, Barry Jia-Fu"

Now showing 1 - 2 of 2

Reliability study of InGaP/GaAs HBT for 28V operation
(2006)
Chau, Frank Hin-Fai
;
Lin, Barry Jia-Fu
;
Chen, Yan
;
Kretschmar, Mark
;
Lee, Chien-Ping
This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm(2) current density and 310 degrees C junction temperature resulted in zero device failures after over 3600 hours of stress. Wafer-level reliability tests using extreme current stress conditions were used to force transistors to degrade in short time for quick checking of transistor integrity and process reliability. Transistor lifetimes were generally higher than those in conventional low voltage HBTs at similar junction temperatures. Combining with the previously reported ruggedness and linearity performance, the high voltage InGaP/GaAs HBT is a mature technology for use in the 28V high linearity power amplification.
Studies of Safe Operating Area of InGaP/GaAs Heterojunction Bipolar Transistors
(2014-04-01)
Lee, Chien-Ping
;
Tao, Nick G. M.
;
Lin, Barry Jia-Fu
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied in detail both experimentally and theoretically. Devices without ballasting resistors were measured in dc to reveal the intrinsic SOA characteristics, which are influenced by both self-heating and the breakdown effect. Two distinct regions in the SOA boundary were observed indicating two different dominating failure mechanisms at different bias conditions. The theoretical analysis, which took into consideration all the relevant effects, was able to explain all the features in the measured results. Secondary unstable points beyond the SOA boundary were found theoretically. These secondary failure points and the gap between the two branches of the SOA boundary explain why the device failure points when measured in constant I-b mode were different from those measured in constant V-b mode.