Browsing by Author "Lin, Bo Chun"

Now showing 1 - 2 of 2

A novel process for forming an ultra-thin oxynitride film with high nitrogen topping
(2008-02-01)
Lai, Chiung Hui
;
Lin, Bo Chun
;
Chang, Kow Ming
;
Hsieh, Kuang Yeu
;
Lai, Yi Lung
We have proposed an approach to grow ultra-thin oxynitride film with high nitrogen concentration (approximate to 13 at%) on the top and low interface state density (D-it = 2 x 10(10) cm(-2) eV(-1)). In general, a high-nitrogen oxynitride film provides a rather reliable and higher dielectric constant. In this method, oxynitride growth included three process stages-chemical oxide growth, nitridation and subsequent dry oxidation. By this technique, the films demonstrate the desirable nitrogen concentration profile and excellent properties in terms of low Dit, low leakage current, and high endurance in stressing. Better controllability in film thickness may be achieved because the oxidation rate of the nitride-chemical oxide is much smaller than that of the conventional oxide. Most importantly, this process is simple and fully compatible with current process technology. (C) 2007 Published by Elsevier Ltd.
Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
(2011-03-01)
Hsieh, Chih Ren
;
Lai, Chiung Hui
;
Lin, Bo Chun
;
Zheng, Yuan Kai
;
Lou, Jen Chung
In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal-oxide-semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon-oxide-hafnium oxide-oxide-silicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH(3)) nitridation followed by reoxidation with oxygen (O(2)). The novel oxynitride process is not only compatible with the standard complementary metal-oxide-semiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application. (C) 2011 The Japan Society of Applied Physics