Browsing by Author "Lin, Bo-Han"

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Job-Level Alpha-Beta Search
(2015-03-01)
Chen, Jr-Chang
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Wu, I-Chen
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Tseng, Wen-Jie
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Lin, Bo-Han
;
Chang, Chia-Hui
An approach called generic job-level (JL) search was proposed to solve computer game applications by dispatching jobs to remote workers for parallel processing. This paper applies JL search to alpha-beta search, and proposes a JL alpha-beta search (JL-ABS) algorithm based on a best-first search version of MTD(f). The JL-ABS algorithm is demonstrated by using it in an opening book analysis for Chinese chess. The experimental results demonstrated that JL-ABS reached a speed-up of 10.69 when using 16 workers in the JL system.
Purely in-plane ferroelectricity in monolayer SnS at room temperature
(2020-05-15)
Higashitarumizu, Naoki
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Kawamoto, Hayami
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Lee, Chien-Ju
;
Lin, Bo-Han
;
Chu, Fu-Hsien
2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd-even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics. Out-of-plane ferroelectricity is usually unstable in the two dimensional limit due to the presence of the depolarization field. Here, the authors successfully circumvent this issue by growing mu m-sized SnS monolayers that exhibit in-plane ferroelectricity that is stable at room temperature.
Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin
(2019-12-01)
Hsu, Wei-Ting
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Lin, Bo-Han
;
Lu, Li-Syuan
;
Lee, Ming-Hao
;
Chu, Ming-Wen
Excitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species-dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.