Browsing by Author "Lin, C. -Y."
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Item type:Item, A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices(2020-06-01) ;Lin, C. -Y. ;Chen, P. -H. ;Chang, T. -C. ;Huang, W. -C.Tan, Y. -F.In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide-based selectors have been widely investigated because of their high switching speed (similar to 10-ns transition time), sufficient nonlinearity (>10(3)), and endurance stability (similar to 10(10)). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 10(7) at 65 degrees C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal-oxide-semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future. (C) 2020 Elsevier Ltd. All rights reserved.Item type:Item, Hepatic expression of MxA and OAS1 in an ex vivo liver slice assay independently predicts treatment outcomes in chronic hepatitis C(2012-02-01) ;Cheng, J. -C. ;Yeh, Y. -J. ;Huang, Y. -H. ;Liang, K. -H.Chang, M. -L.. Antiviral effect of interferon is mediated by the expression of interferon-stimulated genes (ISGs). However, because of the difficulty in obtaining paired liver biopsies before and after interferon treatment, the key ISGs expressed in human hepatocytes and responsible for interferon-based antiviral activities in chronic hepatitis C remain illusive. Prior to a standard course of peginterferon plus ribavirin therapy, 104 patients underwent a liver biopsy. A small piece of the liver biopsy sample from each patient was submitted for ex vivo tissue culture in the presence or absence of interferon. Hepatic expression of 8 ISGs was detected by RT-PCR. The ISG expression patterns and clinicopathological variables were correlated with subsequent treatment outcomes. Multivariate logistic regression analysis showed that hepatic MxA expression (P = 0.008) and leucocyte count (P = 0.040) independently predicted the end of therapeutic virological response, while hepatic OAS1 expression (P = 0.003), genotype 1 (P = 0.002), HCV-RNA level (P = 0.007), AST/ALT ratio (P = 0.004) and leucocyte count (P = 0.034) independently predicted the sustained virological response. Immunohistochemistry analysis showed that interferon-induced OAS1 expression localized to the hepatocytes. In conclusion, hepatic MxA and OAS1 expression predicted, respectively, the end of therapeutic and sustained virological responses in interferon-based treatment of chronic hepatitis C.Item type:Item, Quadrature current-reused divide-by-3 semi-dynamic frequency divider with active balun(2012-01-05) ;Lin, C. -Y. ;Rao, P. -Z. ;Lin, Y. -K. ;Chung, S. -J.傳播研究所A divide-by-3 semi-dynamic frequency divider (SDFD) with active balun is presented using the current-reused technique. The proposed SDFD is composed of a Gilbert cell mixer, one stage of static divider and an active balun. The LO switching stage of the Gilbert cell mixer is also the current source of the static frequency divider to construct the current-reused architecture. At the incident power of 0 dBm, this frequency divider operates at the maximum bandwidth of 1100 MHz from 21.5 to 22.6 GHz. The power consumption of the divider is 12 mW at a 1.5 V supply voltage.