Browsing by Author "Lin, C. C."

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A Full-Color, White Light Emission of Quantum-Dot-Based Display Technology Using Pulsed Spray Method with Distributed Bragg Reflector
(2012)
Chen, K. J.
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Chen, H. C.
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Lin, C. C.
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Tsai, H. H.
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Tsai, K. A.
A colloidal quantum dot light-emitting multi-layer structure with HFO2/SiO2 distributed Bragg reflector is manufactured by pulse spray method. A pure white light with strong enhancement due to better utilization of UV pump was demonstrated. (C)2012 Optical Society of America
A HIGHLY EFFICIENT HYBRID CDS-GAAS SOLAR CELL
(2012)
Chen, H. C.
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Lin, C. C.
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Tsai, Y. L.
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Han, H. V.
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Yu, Peichen
A novel design of hybrid solar cell combining traditional GaAs-based solar cell with colloidal CdS quantum dots (ODs) is demonstrated. By applying CdS ODs on the surface of GaAs device, we can obtain an effective antireflection coating at long wavelength. Moreover, due to its strong absorption at ultraviolet range and efficient light emission at blue photon, CdS quantum dots can down-convert the high-energy UV photons into visible ones, which are more easily to be collected in GaAs solar cell. The short circuit current and power conversion efficiency of this new device increases by 21% and 18.9%, respectively, when we compare them to the uncoated GaAs solar cell. An increase of the surface photoconductivity was also detected due to UV presence, and the fill factor of the CdS ODs solar cell can be improved accordingly.
Colossal electroresistance and colossal magnetoresistance in spinel multiferroic CdCr(2)S(4)
(2010-03-22)
Sun, C. P.
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Huang, C. L.
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Lin, C. C.
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Her, J. L.
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Ho, C. J.
Colossal magnetoresistance (CMR) and colossal electroresistance (CER) induced by the electric field in spinel multiferroic CdCr(2)S(4) are reported. It is found that a metal-insulator transition in CdCr(2)S(4) is triggered by the electrical field. In magnetic fields, the resistivity rho of CdCr(2)S(4) responds similarly to that of CMR manganites. Combing previous reports, these findings make CdCr(2)S(4) the unique compound to possess all four properties of the colossal magnetocapacitive, colossal electrocapacitive, CER, and CMR. The present results open a new venue for searching new materials to show CMR by tuning electric and magnetic fields.
Colossal electroresistance and colossal magnetoresistance in spinel multiferroic CdCr2S4
(2010-03-22)
Sun, C. P.
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Huang, C. L.
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Lin, C. C.
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Her, J. L.
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Ho, C. J.
Colossal magnetoresistance (CMR) and colossal electroresistance (CER) induced by the electric field in spinel multiferroic CdCr2S4 are reported. It is found that a metal-insulator transition in CdCr2S4 is triggered by the electrical field. In magnetic fields, the resistivity rho of CdCr2S4 responds similarly to that of CMR manganites. Combing previous reports, these findings make CdCr2S4 the unique compound to possess all four properties of the colossal magnetocapacitive, colossal electrocapacitive, CER, and CMR. The present results open a new venue for searching new materials to show CMR by tuning electric and magnetic fields.
Conversion Efficiency Enhancement of GaN/In(0.11)Ga(0.89)N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process
(2011-09-15)
Wang, H. W.
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Chen, H. C.
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Chang, Y. A.
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Lin, C. C.
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Han, H. W.
In this study, p-i-n double-heterojunction GaN/In(0.11)Ga(0.89)N solar cells grown by metal-organic chemical vapor deposition on pattern sapphire substrate are presented. The solar cell with standard process has a conversion efficiency of 3.1%, which corresponds to a fill factor of 58%, short circuit current density of 2.86 mA/cm(2), and open circuit voltage of 1.87 V under AM1.5G illumination. To further improve the conversion efficiency of the GaN/In(0.11)Ga(0.89)N solar cells, two-dimensional polystyrene nanospheres were deposited and self-organized as mask in the anisotropic inductively coupled plasma reactive ion etching process to form a biomimetic surface roughing texture. The surface morphology of the solar cell shows a periodically hexagonal bead pattern and the beads are formed in a diameter of 160 nm with a period of 250 nm. An increase of 15% in short circuit current density is found, thus improving the conversion efficiency to 3.87%. If we optimize the structure for 180 nm of the height and 375 nm of the period, a 10% gain can be expected when compared to the current structure.
Conversion Efficiency Enhancement of GaN/In0.11Ga0.89N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process
(2011-09-15)
Wang, H. W.
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Chen, H. C.
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Chang, Y. A.
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Lin, C. C.
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Han, H. W.
In this study, p-i-n double-heterojunction GaN/In0.11Ga0.89N solar cells grown by metal-organic chemical vapor deposition on pattern sapphire substrate are presented. The solar cell with standard process has a conversion efficiency of 3.1%, which corresponds to a fill factor of 58%, short circuit current density of 2.86 mA/cm(2), and open circuit voltage of 1.87 V under AM1.5G illumination. To further improve the conversion efficiency of the GaN/In0.11Ga0.89N solar cells, two-dimensional polystyrene nanospheres were deposited and self-organized as mask in the anisotropic inductively coupled plasma reactive ion etching process to form a biomimetic surface roughing texture. The surface morphology of the solar cell shows a periodically hexagonal bead pattern and the beads are formed in a diameter of 160 nm with a period of 250 nm. An increase of 15% in short circuit current density is found, thus improving the conversion efficiency to 3.87%. If we optimize the structure for 180 nm of the height and 375 nm of the period, a 10% gain can be expected when compared to the current structure.
Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer
(2014-08-01)
Lin, B. C.
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Chang, Y. A.
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Chen, K. J.
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Chiu, C. H.
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Li, Z. Y.
In this study, the design and fabrication of a InGaN vertical-cavity surface-emitting laser (VCSEL) with a composition-graded electron blocking layer (GEBL) are revealed experimentally and theoretically. It has been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular EBL. The output power obtained at 20 kA cm(-2) is enhanced by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2 kA cm(-2) and the enlarged slope efficiency. Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple-quantum-well (MQW) active region.
Distance dependence of energy transfer from InGaN quantum wells to graphene oxide
(2013-08-01)
Lin, T. N.
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Huang, L. T.
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Shu, G. W.
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Yuan, C. T.
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Shen, J. L.
We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d(2) separation distance, which is dominated by the layer-to-layer dipole coupling. (C) 2013 Optical Society of America
Effect of the Thermal Characteristics of Phosphor for the Conformal and Remote Structures in White Light-Emitting Diodes
(2013-10-01)
Chen, K. J.
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Lin, B. C.
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Chen, H. C.
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Shih, M. H.
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Wang, C. H.
The influence of the thermal effect of phosphor for conformal and remote structures in white light-emitting diodes was investigated using the junction and phosphor temperatures. Comparing the measured temperatures with IR thermometer, the remote structure has a higher phosphor temperature than the conformal structure. This result indicates that the phosphor in the conformal structure has demonstrated superior conduction because of the high thermal conductivity in surrounding. Furthermore, thermal distribution in the simulation results has shown to have favorable agreement with the experimental results. Consequently, the lifetime measurement is shown to verify the results of the simulation and experiment for both structural types.
Efficiency Enhancement in Single-Junction InGaP Solar Cells by Using Self-Assembled Nanospheres
(2011-06-01)
Chen, H. C.
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Lin, C. C.
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Wang, H. W.
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Tsai, M. A.
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Tseng, P. C.
A single-junction InGaP solar cell with polystyrene (PS) nanospheres on the surface has been developed. The self-assembly of PS nanospheres is one of the simplest and the fastest methods with which to build a 2-D closely packed periodic structure. Due to the scattering of the PS nanospheres, the light path length can be increased when compared to the InGaP solar cells without PS nanospheres on the top. An increase short-circuit current from 8.93 to 10.31 mA is improved when a single-junction InGaP solar cell is coated with PS nanospheres. The conversion efficiency measured can also be improved from 8.79% to 9.71%. The single-junction InGaP solar cell with PS nanospheres was achieved.
Electrically responsive ZnO nanotubes for controlled release of biomolecules
(2017-01-01)
Lin, C. C.
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Chen, Y. W.
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Hsiao, C. S.
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Chen, S. Y.
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材料科學與工程學系
We developed a novel electro-responsive drug delivery device by depositing fluorescein isothiocyanate (FITC)-loaded zinc oxide nanotubes (ZTs) onto indium tin oxide (ITO)/polyethylene terephthalate (PET) substrates (called FITC-ZTs-ITO/PET). With a large payload of FITC up to 0.98 mmol g(-1), the FITC-ZTs simultaneously provide a burst-like FITC release and a repeated step-like release after application of an electrical field at specific resonant frequencies. Additionally, FITC-ZTs-ITO/PET is biocompatible with both HeLa and MRC5 cells for ZT concentrations below 50 mu g/ml. These results demonstrate that FITC-ZTs-ITO/PET is a new platform that can provide local, on-demand electrically responsive drug release for biomedical applications.
Electrically responsive ZnO nanotubes for controlled release of biomolecules (vol 43, pg S802, 2017)
(2017-12-01)
Lin, C. C.
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Chen, Y. W.
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Hsiao, C. S.
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Chen, S. Y.
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材料科學與工程學系
Employing pipelined thinning architecture for real-tire fingerprint verifier
(2006-09-01)
Hsiao, P. Y.
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Chen, X. Z.
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Lin, C. C.
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Hua, C. H.
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Chang, C. C.
Thinning is a very important operation in the pre-processing stage of fingerprint recognition. With the availability of fast thinning hardware, real-time image processing applications can be achieved. The authors introduce a detailed hardware architecture design of a thinning processor used in an embedded fingerprint recognition system. The proposed thinning algorithm has a parallel-pipelining structure suited to hardware realisation, which is implemented and verified using FPGA. Equipped with a modification unit array, a designated operating schedule, and an address generator based on systolic counter, this thinning processor is able to perform a thinning operation within 0.07 s at 40 MHz for a 512 x 512 picture, which is at least 40 times faster than software execution. Consequently, the proposed thinning processor was successfully integrated into a real-time fingerprint recognition system.
Energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding
(2011-03-14)
Shu, G. W.
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Lin, C. C.
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Lin, H. T.
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Lin, T. N.
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Shen, J. L.
We present the first observation of resonance energy transfer from InGaN quantum wells to Au nanoclusters via optical waveguiding. Steady-state and time-resolved photoluminescence measurements provide conclusive evidence of resonance energy transfer and obtain an optimum transfer efficiency of similar to 72%. A set of rate equations is successfully used to model the kinetics of resonance energy transfer. (C) 2011 Optical Society of America
Enhance current density and light trapping effect in a-Si thin film solar cells by flexible textured PDMS film
(2013)
Han, H. V.
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Chen, H. C.
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Tsai, Y. L.
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Lin, C. C.
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Kuo, H. C.
The light trapping effect of a textured polydimethylsiloxane (PDMS) film on the suppression of surface reflection in a-Si:H solar cell is investigated. The angular dependence of scattered light from this PDMS film was measured and a symmetric scattering intensity peak was found at +/- 20(0). The enhancement of power conversion efficiency in the a-Si:H solar cell with textured PDMS film can reach 16.37% compared to the a-Si:H solar cells without textured PDMS film. This improvement is mainly attributed to the enhanced efficiencies of light trapping and scattering. Such a design concept and fabrication process can be widely adapted to a variety of thin film solar cells.
Enhancement of Light Harvesting and Power Conversion Efficiency in GaAs solar cells using flexible textured PDMS film
(2013-01-01)
Han, H. V.
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Chen, H. C.
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Lin, C. C.
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Tsai, Y. L.
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Yeh, Y. L.
Light trapping of textured polydimethylsiloxane films for antireflection is investigated. The efficiency of GaAs solar cell with textured PDMS film reach 28% enhancement. Numerical analysis successfully rebuilds the surface profile close to the real situation. (C) 2013 Optical Society of America
Excellent Color Rendering Index Quantum Dots White Light-Emitting Diode with Distributed Bragg Reflector Structure
(2014)
Chen, K. J.
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Lin, B. C.
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Han, H. V.
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Lin, C. C.
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Lee, C. Y.
This study demonstrated the high CRI and excellent uniformity colloidal quantum dot white-light-emitting diodes with the DBR structure at different correlated color temperature from 2500 K to 4500K.
Fruits are Vehicles of Drug Resistant Pathogenic Yeasts
(2018-06-01)
Lo, H. J.
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Zhou, Z. L.
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Tsai, S. H.
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Chu, W. L.
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Chen, Y. Z.
GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template
(2011)
Lin, D. W.
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Lin, C. C.
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Chiu, C. H.
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Lee, C. Y.
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Yang, Y. Y.
In this study, high crystalline quality 30 mu m thick gallium nitride (GaN) films were grown by hydride vapor phase epitaxy (HVPE) on sapphire substrate, and the thick GaN films were used for developing high performance light-emitting diodes (LEDs). By using high-resolution X-ray diffraction, the full width at half-maximum (FWHM) of the rocking curve shows that this 30 mu m thick GaN template had high crystalline quality. In addition, the transmission electron microscopy (TEM) images suggest that threading dislocation densities (TDDs) are almost free in multiple quantum wells (MQWs) for LEDs grown on 30 mu m thick GaN template. Compared with conventional LEDs grown on sapphire, LEDs grown on 30 mu m thick GaN template exhibit 26% enhancement of light output at 20 mA. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.003111jes] All rights reserved.
Genetically closely related azole-resistant Candida tropicalis in environments can be a threat to healthcare
(2018-06-01)
Zhou, Z. L.
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Tsai, J. N.
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Tseng, M. N.
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Liu, H. L.
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Lin, C. C.