Browsing by Author "Lin, C. W."

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High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al(2)O(3)-Doped SrTiO(3) MIM Capacitors
(2010-01-01)
Huang, C. C.
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Cheng, C. H.
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Lin, C. W.
;
Chang, L. M.
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電子工程學系及電子研究所
In this paper, the impact of Al(2)O(3) incorporation on the electrical characteristics of the SrTiO(3) (STO) metal-insulator-insulator (MIM) capacitor was studied. The Al(2)O(3)-doped STO (STO: Al(2)O(3) = 3:1) MIM provides a high capacitance density (14.6 fF/mu m(2)) and a very low leakage current density (9.2 x 10(-9) A/cm(2) at -1 V) at the same time. The significant enhancement of the conduction band offset and bandgap due to Al(2)O(3) incorporation reduces leakage current largely while maintaining the favorable properties of STO, such as a large high-kappa value, a small temperature coefficient of capacitance, and paraelectricity (no fatigue or aging problem) in the operating temperature range of devices. Meanwhile, we also made a comparison among pure STO, Al(2)O(3)-doped STO, and HfO(2)-doped STO MIM capacitors. Results revealed that STO MIM and HfO(2)-doped STO MIM capacitors both show higher capacitance densities, while the leakage current of the Al(2)O(3)-doped STO MIM is much lower than those of both the STO MIM and HfO(2)-doped STO MIM capacitors, which meets the strict requirement of the International Technology Roadmap for Semiconductors 2018. Therefore, the excellent result suggests that the Al(2)O(3)-doped STO film is a potential candidate material for dynamic random access memory and radio-frequency applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3368671] All rights reserved.
High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al2O3-Doped SrTiO3 MIM Capacitors
(2010-01-01)
Huang, C. C.
;
Cheng, C. H.
;
Lin, C. W.
;
Chang, L. M.
;
電子工程學系及電子研究所
In this paper, the impact of Al2O3 incorporation on the electrical characteristics of the SrTiO3 (STO) metal-insulator-insulator (MIM) capacitor was studied. The Al2O3-doped STO (STO: Al2O3 = 3:1) MIM provides a high capacitance density (14.6 fF/mu m(2)) and a very low leakage current density (9.2 x 10(-9) A/cm(2) at -1 V) at the same time. The significant enhancement of the conduction band offset and bandgap due to Al2O3 incorporation reduces leakage current largely while maintaining the favorable properties of STO, such as a large high-kappa value, a small temperature coefficient of capacitance, and paraelectricity (no fatigue or aging problem) in the operating temperature range of devices. Meanwhile, we also made a comparison among pure STO, Al2O3-doped STO, and HfO2-doped STO MIM capacitors. Results revealed that STO MIM and HfO2-doped STO MIM capacitors both show higher capacitance densities, while the leakage current of the Al2O3-doped STO MIM is much lower than those of both the STO MIM and HfO2-doped STO MIM capacitors, which meets the strict requirement of the International Technology Roadmap for Semiconductors 2018. Therefore, the excellent result suggests that the Al2O3-doped STO film is a potential candidate material for dynamic random access memory and radio-frequency applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3368671] All rights reserved.
High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
(2011-01-01)
Chen, W. B.
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Cheng, C. H.
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Lin, C. W.
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Chen, P. C.
;
Chin, Albert
We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.
Magnetotransport properties, electronic structure, and microstructure of La0.7Sn0.3MnO3 thin films
(2006-10-01)
Cheng, T. Y.
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Lin, C. W.
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Chang, L.
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Hsu, C. H.
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Lee, J. M.
Single-phase La0.7Sn0.3MnO3 (LSnMO) thin films were fabricated on LaAlO3 (LAO) substrates by pulsed laser deposition (PLD). The as-deposited films, though showed insulating characteristics with no sign of insulator-metal transition (IMT) down to very low temperatures, did display a paramagnetic-ferromagnetic transition (PFT) around 180 K. The x-ray absorption spectroscopy (XAS) of the as-deposited LSnMO films shows signature of Mn3+/Mn2+ mixed valence indicating that tetravalent Sn ions may have resulted in electron doping into the e(g) band of Mn. The transmission electron microscopy (TEM) analyses on the as-deposited LSnMO films further confirmed that the films are epitaxial with uniform composition distributions. It is suggestive that the doping level of x=0.3 in La1-xSnxMnO3 can be achieved without disrupting the perovskite structure or any composition inhomogeneity. On the other hand, ex situ annealing in oxygen as well as in argon atmosphere, though both drive the films to display IMT and a marked enhancement in the transition temperature, the preservation of LSnMO phase is somewhat doubtful. In the oxygen-annealing case, the evidence from the XAS measurements on Sn ions though showed the existence of tetravalent characteristics, the Hall measurements indicated that the obtained LSnMO films are p type in nature. Furthermore, the TEM analyses also revealed the emergence of the Sn compounds, which may ultimately drive the obtained films into La-deficient La1-xMnO3 phases.
Study on Posture Homeostasis - One Hour Pilot Experiment
(2011)
Lin, G. W.
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Hsiao, T. C.
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Lin, C. W.
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分子醫學與生物工程研究所
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Institute of Molecular Medicine and Bioengineering
The goal of this study is to study the feature of posture homeostasis in prolonged sitting of normals, in order to provide information to electrical wheelchair designer to design ideal wheelchair to help people who cannot functionally reposition themselves and relief pressures under their bony prominences. Subjects sat on a powered wheelchair which seat inclination can be adjusted. We used a pressure mat to measure the pressure under hip and back during prolonged wheelchair sitting, then calculated the center of pressure (COP) to analyzed the mode and range of posture change in different seat inclination. The study included 10 healthy subjects. The results showed that in these 10 subjects, the COP movement of 100 degrees, 110 degrees, 120 degrees and 130 degrees in the sagittal plane was 11.5 +/- 6.5, 11.1 +/- 4.3, 11.4 +/- 5.8, and 12.8 +/- 5.5cm, and in the coronal plane was 7.1 +/- 5.4, 4.2 +/- 5.5, 4.7 +/- 6.9, and 5.0 +/- 5.1.Through one-way ANOVA, we found statistically significant differences (p-value <0.05). When separated different sex in two group, we found that male motion extent in sagittal and coronal plane were 11.7 +/- 0.7 and 6.5 +/- 1.8, and female were 10.2 +/- 1.9 and 3.9 +/- 1.6. There was significant difference between motion extent of males and females. Males moved to a larger extent than females (p <0.05). In addition, the same subjects seated in the experimental design in four different angles, two to four will show similar features. The features of posture homeostasis in sitting of different subjects somehow may have significant differences.