Browsing by Author "Lin, CL"

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Characteristics of copper films deposited on H(2)-plasma-treated TaN substrate by chemical vapor deposition
(2002-09-01)
Lin, CL
;
Chen, PS
;
Chang, CL
;
Chen, MC
;
電子工程學系及電子研究所
This work investigates the chemical vapor deposition Cu films deposited on the TaN substrate with and without an H(2)-plasma treatment prior to Cu film deposition and the effect of postdeposition thermal annealing. The Cu films deposited on the H(2)-plasma-treated TaN substrate have a number of favorable properties over the films deposited on the TaN substrate without the plasma treatment. These include an increased (111)-preferred orientation, smoother film surface, and a larger effective deposition rate. However, the Cu films deposited on the H(2)-plasma-treated substrate have a higher electrical resistivity, presumably due to the smaller, grain size. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. We presume that the H(2)-plasma treatment, resulted in a dense and uniform distribution of hydrogen radicals adsorbed on the substrate surface, leading to the shortening of incubation time and the formation of Cu films with a smoother surface and enhanced (100)-preferred orientation. A combined process including H(2)-plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N(2) ambient, is proposed for the advantage of low-resistivity and high (111)-oriented Cu film deposition. (C) 2002 American Vacuum Society.
Characterization of phosphorus-doped and boron-doped diamond-like carbon emitter arrays
(2001-11-01)
Tsai, CL
;
Chen, CF
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
We synthesized phosphorus-doped and boron-doped emitters by using trimethylphosphite P(OCH3)(3) and trimethylborate B(OCH3)(3) as doping sources in a microwave plasma chemical vapor deposition system. Based on our experimental results from scanning electron microscopy and Raman spectra, there is much difference among undoped, phosphorus-doped, and boron-doped diamondlike material. In addition, doping both phosphorus and boron can enhance electric properties by reducing the turn-on voltage and can increase the emission current density. The turn-on voltages of undoped, boron-doped, and phosphorus-doped emitters in triode-type field emitter arrays are 15, 8, and 5 V, respectively. The emission currents of boron-doped and phosphorus-doped emitters are about 20 and 80 times larger than the undoped. (C) 2001 American Institute of Physics.
Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrate
(2002-01-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Chemically vapor deposited (CVD) Cu films on TiN substrates with and without Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TiN substrate have a number of favorable properties over films deposited on a TiN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and markedly increased ( 111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. A combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed in order to achieve low-resistivity and highly (111)-oriented Cu film deposition. In this way, Cu films with a resistivity of 1.90muOhm.cm and a Cu(111)/Cu(200) peak ratio of 7.08 were obtained.
Effect of TiN substrate plasma treatment on copper chemical vapor deposition
(2004-05-01)
Chang, CL
;
Lin, CL
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this study, we investigated copper chemical vapor deposition (Cu CVD) on TiN substrates with respect to the effects of various plasma treatments. The Cu films deposited on the Ar-, H(2)-, and Ar+H(2)-plasma-treated TiN substrates all exhibit favorable properties over films deposited on the as-deposited TiN substrate. These include a smaller wetting angle of Cu nucleation and thus a smoother film surface, and an increased (111)-preferred orientation. However, the Cu films deposited on the plasma-treated substrates all exhibit a slightly higher resistivity, presumably due to a small grain size. With postdeposition thermal annealing at 400degreesC, the surface roughness of the Cu films and the Cu(111)/Cu(200) reflection ratio were both improved. We consider that a combined process including an Ar+H(2) plasma substrate treatment prior to Cu film deposition and a postdeposition thermal annealing is favorable for achieving a low surface roughness and high (111)-oriented Cu film deposition.
Effects of TaN substrate pretreatment by Ar plasma on copper chemical vapor deposition
(2002-05-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
CVD Cu films deposited on TaN substrates with and without an Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TaN substrate have a number of favorable properties over the films deposited on a TaN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and increased (111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. As the results of Ar plasma substrate pretreatment, we presume that the smoother and amorphous-like surface layer of the TaN substrate enhanced the formation of the most stable (111) texture Cu films, and that the higher substrate surface energy resulted in Cu films with smoother surface and regularly shaped smaller grains. Thus, a combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed for the advantages of low-resistivity and high (111)-oriented Cu film deposition. (C) 2002 The Electrochemical Society.
Effects of the underlayer substrates on copper chemical vapor deposition
(2002-05-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Copper chemical vapor deposition (Cu CVD) on different substrates, including TiN, Ta, and TaN, was studied with regard to the physical property, nucleation, and adhesion of the deposited Cu films. The Cu film deposited on TiN substrate has a number of favorable properties over the films deposited on Ta and TaN substrates: lower electrical resistivity, lower impurity contamination, and higher (111)-preferred orientation. Moreover, CVD of Cu films on TiN substrate has a shorter incubation time and better film adhesion. From the viewpoint of adhesion, microstructure, and physical properties of the Cu film, we may conclude that TiN is a better underlayer substrate than Ta and TaN for Cu CVD. (C) 2002 American Vacuum Society.
Electronic properties of phosphorus-doped triode-type diamond field emission arrays
(2001-11-01)
Chen, CF
;
Tsai, CL
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
Experimental investigation of wavelength-tunable WADM and OXC devices using strain-tunable fiber Bragg gratings
(1999-10-01)
Liaw, SK
;
Ho, KP
;
Lin, CL
;
Chi, S
;
光電工程學系
Two reconfigurable wavelength add/drop multiplexer (WADM) and optical cross-connect (OXC) devices based on strain-tunable fiber Bragg gratings (ST-FBGs) are proposed. The feasibility of WADM is verified by measuring the bit-error-rate performance of the dropped (cross-connect) and pass-through (no cross-connect) channels over a 50- and 100-km standard single-mode fiber for a 2.5 Gb/s system. Compared to back-to-back transmission, a negligible power penalty of only 0.2 dB is observed. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Fabrication and characterization of phosphorus-doped diamond field emitters in triode-type field emission arrays
(2001-03-01)
Chen, CF
;
Tsai, CL
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this work, we present a novel scheme that involves a new fabrication process for gate-structured metal-insulator-semiconductor (MIS) diodes using IC technology. Using a bias-assisted microwave-plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped emitters completes this process. A comparison of the held emission characteristics of two types of non-doped dendrite-like and P-doped nanotube-like diamond emitters with a 4-mum gate aperture is made. Phosphorus doping can enhance the electrical characteristics by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped and P-doped emitters is 15 and 5 V, respectively. Phosphorus doping can enhance the electrical properties by increasing the emission current, since the field emission current (I-a) of non-doped and P-doped emitters is 4 muA (at V-gc = 45 V) and 322 muA (at V-gc = 120 V), respectively. The emission current of P-doped emitters is approximately 80-fold larger than that of non-doped diamond emitters. (C) 2001 Elsevier Science B.V. All rights reserved.
Fabrication of high surface area graphitic nanoflakes on carbon nanotubes templates
(2005-11-01)
Chen, CC
;
Chen, CF
;
Lee, IH
;
Lin, CL
;
材料科學與工程學系
Graphitic nanoflakes were fabricated on the carbon nanotubes templates for increasing the surface area utilizing bias assisted microwave plasma enhanced chemical vapor deposition (MWPECVD). The analysis of morphologies and structures were achieved by means of scanning electron microscopy and transmission electron microscopy. The Surface area of graphitic nanoflakes, carbon nanotubes (CNTs) and graphitic nanoflakes/CNTs were 57.44 m(2)/g, 90.31 m(2)/g and 130.96 m(2)/g from BET measurement, respectively. The cyclic voltammetry was used to calculate the active area of platinum catalysts in I M sulfuric acid from hydrogen adsorption peak. All enhancement of activity could be observed from the calculation of CV results. This may be attributed to the small particle size and high dispersion of platinum particles coated on graphitic nano flakes/CNTs. These high surface area materials could be used as catalysts supports or electrode for fuel cell applications. (c) 2005 Elsevier B.V. All rights reserved.
Field emission from aligned carbon nanofibers grown in situ by hot filament chemical vapor deposition
(2003-04-14)
Chen, CF
;
Lin, CL
;
Wang, CM
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Aligned high-aspect-ratio carbon nanofibers were grown in situ using modified hot filament chemical vapor deposition. The field-emission properties were then studied. An Fe-Cr wire filament acted as a catalytic source and a heat source. Carbon nanofibers were deposited on a Si substrate with CO2 as a carrier gas through ethanol. The experimental results indicate that the flow in the horizontal direction to the substrate produces carbon nanofibers with diameters of less than 10 nm. The field-emission current of 2 V/mum was 0.54 mA/cm2; the turn-on field of the sample was 1.1 V/mum. (C) 2003 American Institute of Physics.
Field emission from well-aligned carbon nanotips grown in a gated device structure
(2002-03-11)
Tsai, CL
;
Chen, CF
;
Lin, CL
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Vertically well-aligned, high-aspect-ratio carbon nanotips have been directly grown upward on the gated device structure with 4 mum gate aperture. The nanotips rapidly nucleate and grow without any catalyst. In addition, selected area deposition of nanotips is achieved by using a Pt layer as inhibitor in the bias-assisted microwave plasma chemical vapor deposition. The field emission current of nanotips on the gated structure is 154 muA (at a gate-to-cathode voltage of V-gc=50 V). This results from the following reasons: (i) short gate-tips spacing, (ii) small gate aperture, and (iii) the high-aspect ratio of nanotips. (C) 2002 American Institute of Physics.
Field emission properties of aligned carbon nanotubes grown on stainless steel using CH4/CO2 reactant gas
(2004-04-01)
Lin, CL
;
Chen, CF
;
Shi, SC
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Aligned carbon nanotubes (CNTs) were grown on stainless steel 304 by bias-enhanced microwave plasma chemical vapor deposition, using CH4/CO2 as the reactant gas. A bias was applied to the microwave plasma to grow the nanotubes over various periods. Experimental results show that well-aligned CNTs grow on stainless steel at a negative bias of - 300 V Energy dispersive spectrometer on TEM indicated that the metal catalyst on the top of the CNTs includes Fe and Ni, but not Cr. The field emission properties of the resultant CNTs were obtained at a negative bias of - 300 V: the emission current was 194 muA at 2.2 V/mum; and the turn-on voltage, which is the voltage needed to extract current density of 10 muA /cm(2), was 1.4 V/mum. (C) 2003 Elsevier B.V. All rights reserved.
Field emission properties of vertically aligned carbon nanotubes grown on bias-enhanced hydrogen plasma-pretreated Cr film
(2003-11-01)
Chen, CF
;
Lin, CL
;
Wang, CM
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Using CH4/H-2 source gases, vertically aligned carbon nanotubes were grown on a Cr film by microwave plasma chemical vapor deposition. The Cr film on a silicon wafer had a constant thickness of 100 nm, and bias-enhanced H, plasma pre-treatment was performed for various periods to modify the surface of the Cr film. Bias voltage of - 150 V was applied during both pre-treatment and growth steps, the resultant carbon nanotubes on a Cr film, which had been pretreated in bias-enhanced H-2 plasma for 5 min were vertically aligned. The field emission properties of the resultant carbon nanotubes included an emission current of 0.305 mA at 2 V/mum; and a turn-on field of 1.7 V/mum. (C) 2003 Elsevier B.V. All rights reserved.
Hot filament for in situ catalyst supply in the chemical vapor deposition growth of carbon nanotubes
(2002-01-15)
Chen, CF
;
Lin, CL
;
Wang, CM
;
材料科學與工程學系
;
Department of Materials Science and Engineering
A simplified chemical vapor deposition (CVD) method is described for in situ synthesis of multiwalled carbon nanotubes. The synthesis apparatus is similar to, that used to deposit CVD diamond. However, an Fe-Cr wire is selected and coiled as the filament to grow nanotubes. The tubes crow because the filament acts as both a heat source for pyrolysis, and a source of metal for the catalyst. The evaporated metal atoms can be considered to catalyze the growth of carbon nanotubes. The system has the potential to inexpensively synthesize large amounts of nanotubes continuously by combining physical and chemical vapor deposition.
Hybrid wavelength-division-multiplexing systems for high-capacity digital and analog video trunking applications
(1998-02-01)
Ho, KP
;
Dai, HX
;
Lin, CL
;
Liaw, SK
;
Gysel, H
A five-channel hybrid wavelength-division-multiplexing (WDM) system with one AM-VSB channel and four 2.5-Gb/s channels was demonstrated for video trunking and distribution applications, Two erbium-doped fiber amplifiers (EDFA's) with saturated output power of +13 dBm were used for a standard single mode fiber span of 100 km, Error-free transmission for the digital channels and a carrier-to-noise ratio (CNR) higher than 50 dB for the AM-VSB channel could be achieved simultaneously.
Hybrid wavelength-division-multiplexing systems for high-capacity digital and analog video trunking applications
(1998-02-01)
Ho, KP
;
Dai, HX
;
Lin, CL
;
Liaw, SK
;
Gysel, H
A five-channel hybrid wavelength-division-multiplexing (WDM) system with one AM-VSB channel and four 2.5-Gb/s channels was demonstrated for video trunking and distribution applications, Two erbium-doped fiber amplifiers (EDFA's) with saturated output power of +13 dBm were used for a standard single mode fiber span of 100 km, Error-free transmission for the digital channels and a carrier-to-noise ratio (CNR) higher than 50 dB for the AM-VSB channel could be achieved simultaneously.
Multichannel bidirectional transmission using a WDM MUX/DMUX pair and unidirectional in-line amplifiers
(1997-12-01)
Liaw, SK
;
Ho, KP
;
Lin, CL
;
Chi, S
;
光電工程研究所
We propose a repeated bidirectional WDM transmission system using cascaded WDM MUX/DMUX pairs as narrow-bandpass filters and reflection attenuators, Fiber span is increased by inserting unidirectional EDFA's between WDM MUX/DMUX pair as in-line amplifiers. A three channel hybrid system with one 10-Gb/s and two 2.5-Gb/s channels is also demonstrated in the 1550-nm region for transmission over 150 km of dispersion-shifted fiber, Negligible power penalty due to back reflection was observed.
Multichannel bidirectional transmission using a WDM MUX/DMUX pair and unidirectional in-line amplifiers
(1997-12-01)
Liaw, SK
;
Ho, KP
;
Lin, CL
;
Chi, S
;
光電工程學系
We propose a repeated bidirectional WDM transmission system using cascaded WDM MUX/DMUX pairs as narrow-bandpass filters and reflection attenuators, Fiber span is increased by inserting unidirectional EDFA's between WDM MUX/DMUX pair as in-line amplifiers. A three channel hybrid system with one 10-Gb/s and two 2.5-Gb/s channels is also demonstrated in the 1550-nm region for transmission over 150 km of dispersion-shifted fiber, Negligible power penalty due to back reflection was observed.
Phase behavior and hydrogen bonding in ternary polymer blends of phenolic resin/poly(ethylene oxide)/poly(epsilon-caprolactone)
(2002-01-01)
Kuo, SW
;
Lin, CL
;
Chang, FC
;
應用化學系
;
Department of Applied Chemistry
The phase behavior and hydrogen bonding in ternary polymer blends of phenolic resin, poly(ethylene oxide) (PEO), and poly(epsilon -caprolactone) (PCL) were investigated by using differential scanning calorimetry (DSC) and Fourier transform infrared spectroscopy (FTIR). Although all three binary blends are respective miscible, there exists a closed immiscibility loop in the phase diagram due to the so-called "Delta chi" and "DeltaK" effects in this hydrogen-bonded ternary polymer system. The interassociation equilibrium constant based on the Painter-Coleman association model between phenolic resin and PEO can be indirectly calculated from the fraction of hydrogen-bonded carbonyl groups. Quantitative analyses show that the hydroxyl-ether interassociation is more favorable than the hydroxyl-carbonyl interassociation at room temperature. The interaction energy density value of B-PEO/PCL = -2.85 cal/cm(3) was obtained by comparing the theoretically predicted phase diagram with experimental data.