Browsing by Author "Lin, CM"

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A Raman study of ZnSe at high pressure
(1997-06-01)
Chou, WC
;
Lin, CM
;
Ro, RS
;
Ho, CS
;
Hong, DY
The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.
A Raman study of ZnSe at high pressure
(1997-06-01)
Chou, WC
;
Lin, CM
;
Ro, RS
;
Ho, CS
;
Hong, DY
The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.
Adaptive fuzzy sliding-mode control for linear piezoelectric ceramic motor
(2005)
Hsu, CF
;
Lin, CM
;
Lee, TT
;
電控工程研究所
;
Institute of Electrical and Control Engineering
This paper proposes an adaptive fuzzy sliding-mode controller with proportional-integral learning algorithm (PI-AFSMC) for the unknown nonlinear systems. All the controller parameters are on-line tuned by the derived learning algorithms in the Lyapunov stability theorem, thus the stability of the system can be guaranteed. Finally, the proposed PI-AFSMC is applied to control a linear piezoelectric ceramic motor. Experimental results demonstrate the effectiveness of the proposed PI-AFSMC can achieve favorable tracking performances with unknown the controlled system dynamics.
AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmaking
(2000-06-01)
Loong, WA
;
Lin, CM
;
應用化學系
;
Department of Applied Chemistry
AlSixNy (x similar to 0.31, y similar to 0.45) thin film as a new embedded material for AttPSM in 193 nm lithography was presented. With the good controlling of plasma sputtering of Al (100 similar to 130 W) and Si (20 similar to 50 W) under Ar (75 seem), and nitrogen (2.5 similar to 5 seem), AlSixNy has enough deposition latitude to meet the requirements as an embedded layer. For required phase shift 180 degree, the calculated thickness d(180) of AlSixNy films is in the range of 87 similar to 100 nm. The T% in 365 and 488 nm for optical inspection and alignment is below 40%. Its sheet resistance R-s, is less than 0.8 k Omega/square. Helicon wave plasma etcher and Taguchi design of experiment have been applied to the study of the etching selectivity of AlSixNy over substrate fused silica and negative resist NEB-22. Under chamber pressure 3 mtorr, BCl3 45 sccm, Cl-2 7 seem, plasma source power 1400 W and substrate bias RF power 30 W for the selectivity of AlSixNy over NEB-22 was found to be 4.8:1. The selectivity of AlSixNy over fused silica was 12.3:1 under chamber pressure 9 mtorr, BCl3 13 seem, Cl-2 45 seem, O-2 8 seem, plasma source power 1400 W and substrate bias RF power 30 W. A 0.3 mu m line/space etched pattern using AlSixNy as embedded layer was successfully fabricated.
AlSixOy as a high transmittance embedded material for AttPSM and the correlation between the chemical compositions and optical properties of AlSixOy in 193 nm lithography
(2000)
Lin, CM
;
應用化學系
;
Department of Applied Chemistry
AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithography
(2000-12-01)
Lin, CM
;
Loong, WA
;
應用化學系
;
Department of Applied Chemistry
AlSixOy (Al : Si : O = 1 : 0.36 : 0.88) thin film has the potential for use as a new and high-transmittance (T% similar to 35%) embedded layer of an attenuated phase-shifting mask (AttPSM) in 193 nm lithography. Increasing the compositions of Al2O3, SiO2 and other oxides increases n and decreases k in AlSixOy. Compared to a conventional AttPSM (T% < 10%), the high-T% AttPSM assisted by opaque Cr scattering bars can achieve a greater depth of focus, 0.45 m for a 0.10 mum isolated line. Under the conditions of BCl3/Cl-2 = 30/7 seem, chamber pressure 3 mTorr; source power 1400 W and RF bias power 30 W, the etching selectivity of AlSixOy over positive resist EP-1EG is 7.7 : 1. Under those of BCl3/Cl-2/O-2 = 35/7/3.2 seem, the selectivity of AlSixOy over substrate fused silica is 5.8 : 1. A 0.25-mum-line/space (1 : 1) etched pattern was successfully fabricated using AlSixOy as an embedded layer.
Anion-terminated zinc-blende CdS(100) surface
(1997-10-15)
Lin, CM
;
Tsai, MH
;
Yang, TJ
;
Chuu, DS
;
電子物理學系
Using the local-orbital density-functional molecular-dynamics method, we have studied the surface structure of the strain-stabilized zinc-blende monolayer anion-terrainated CdS(100) surface. By analogy with the GaAs(100) surface, we have considered four structural models and found that the structure with a (2 x 4) unit cell, in which there are a two-dimer unit and a two-shifted-dimer unit, is the most favorable. These results can be understood in terms of physical properties associated with ionicity.
Characterization of CdTe film grown on a Si(111) substrate
(1998-02-01)
Pei, JH
;
Lin, CM
;
Chuu, DS
;
電子物理學系
;
物理研究所
We report the characterization of polycrystalline CdTe films grown on Si(111) by using UHV sublimination techniques. Films grown at substrate temperature below 250 degrees C exhibited streaked X-ray diffraction patterns. To understand the native oxide on the film surface, the films were exposed to a laboratory air environment in the growth chamber for several days. The XPS spectra were taken after each Ar-ion sputtering of these oxidized films. In order to obtain more information from the measured XPS data, we performed core-level line-shape analysis. Based on previously reported studies, CdTe, TeO2, and element Te are constituents in the film, while Cd is almost all in the CdTe state. Raman scattering from oxidized CdTe film in the frequency of 550-900 cm(-1) reveals that TeO2 is the predominant oxide.
Characterization of CdTe film grown on a Si(111) substrate
(1998-02-01)
Pei, JH
;
Lin, CM
;
Chuu, DS
;
電子物理學系
;
物理研究所
We report the characterization of polycrystalline CdTe films grown on Si(111) by using UHV sublimination techniques. Films grown at substrate temperature below 250 degrees C exhibited streaked X-ray diffraction patterns. To understand the native oxide on the film surface, the films were exposed to a laboratory air environment in the growth chamber for several days. The XPS spectra were taken after each Ar-ion sputtering of these oxidized films. In order to obtain more information from the measured XPS data, we performed core-level line-shape analysis. Based on previously reported studies, CdTe, TeO2, and element Te are constituents in the film, while Cd is almost all in the CdTe state. Raman scattering from oxidized CdTe film in the frequency of 550-900 cm(-1) reveals that TeO2 is the predominant oxide.
Chemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 mu m contact pattern in 193 nm lithography
(2002-06-01)
Lin, CM
;
Loong, WA
;
應用化學系
;
Department of Applied Chemistry
When the compositions of Al2O3. SiO2., and other oxides were increased, refractive index (n) appeared to increase and extinction coefficient (k) to decrease in AlSixOy. The study of the correlation among sputtering conditions, chemical compositions and optical properties could lead to the chemical stability of AlSixOy embedded material. Bi layer AlSixOy thin film may be a new high-transmittance (T% similar to 35%) embedded layer of attenuated phase-shifting masks (AttPSMs) in 193 nm lithography, The transparent layer with saturation of Al2O3 and SiO2 compositions exhibits n of 2.3-2.4 and k of 0.1-0.2. The absorptive layer with higher concentrations of Al and Si exhibits n of 1.5-1.7 and k of 0.3-0.4. Combining a dark-tone mask, high-transmittance AttPSM and negative resist resulted in better contrast of the aerial image and a resolution of 0.1 mum for the contact-hole pattern in 193 nm lithography, A 0.20-mum-line/space (1: 1) etched pattern was successfully fabricated using AlSixOy, as an embedded layer.
Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and k
(2000-11-01)
Lin, CM
;
Loong, WA
;
應用化學系
;
Department of Applied Chemistry
The formation and variation of AlN, Si3N4, and nitride compositions in AlSixNy (x similar to0.31, y similar to0.51) embedded material have been shown to correlate with its optical properties. The increasing content of AIN, Si3N4, and nitrides will increase n and decrease k of AlSixNy. A simple and effective correction of measured reflectance R% and transmittance T% based on scalar scattering theory has been applied to the R-T method for determining It and k of embedded layers for 193 nm lithography masks. A 0.2 mum etched pattern of an AlSixNy embedded layer on an oxide/Si wafer substrate was successfully fabricated. (C) 2000 American Vacuum Society. [S0734-211X(oo)08906-X].
Dual band CMOS power amplifier for WLAN applications
(2003)
Jou, CF
;
Cheng, KH
;
Lin, CM
;
Chen, JL
;
傳播研究所
A 2.4 GHz / 5.2 GHz dual band CMOS power amplifier (PA) with a 21-dBm output power using 0.25 - mu m 1P5M standard CMOs process is described. In this paper, we present a CMOs PA with a single input and a single output signal chain which simultaneously optimized for wireless local area network (WLAN) 2.4 GHz / 5.2 GHz applications designed on Rogers RO4003 printed-circuit-board (PCB). The simulated dual-band PA biased at Class-A exhibiting P-1dB = 21dBm in both 2.4 GHz and 5.2 GHz with power added efficiency (PAE) = 26% and PAE = 18% separately. The performances of the designed PA presents the standard CMOs process has the potential for the PAs of 2.4 GHz / 5.2 GHz WLAN applications.
Energy-dispersive x-ray diffraction and Raman scattering of Zn1-xMnxSe bulk crystals at high pressure
(1999-06-15)
Yang, CS
;
Ro, CS
;
Chou, WC
;
Lin, CM
;
Chuu, DS
Energy-dispersive x-ray diffraction experiments were carried out to investigate the structure of phase transitions under high pressure. It was found that the zinc blende (B-3) to rock salt (B-1) phase transition pressures of Zn0.93Mn0.07Se and Zn0.76Mn0.24Se bulk crystals are found 11.8+/-1.5 and 9.9+/-0.5 GPa, respectively. The respective bulk moduli are 61.8+/-0.8 and 60.5+/-0.8 GPa. The pressure-induced zinc blende (ZB) to rock salt (RS) structure phase transition is interpreted as a signature of the semiconductor to metal transition for Zn1-xMnxSe. The above interpretation is further corroborated by the observation of the disappearance of the longitudinal optical phonon at the pressure where the ZB to RS structure transition occurs. (C) 1999 American Institute of Physics. [S0021-8979(99)05312-8].
Fuzzy-identification-based adaptive controller design via backstepping approach
(2005-04-01)
Hsu, CF
;
Lin, CM
;
電控工程研究所
;
Institute of Electrical and Control Engineering
This paper proposes a fuzzy-identification-based adaptive control scheme for the chaotic dynamic systems using backstepping control approach, which is referenced as adaptive fuzzy backstepping control (AFBC). The proposed AFBC offers a design approach to drive the chaotic trajectory to track a desired trajectory, and it is comprised of a fuzzy backstepping controller and a robust controller. The fuzzy backstepping controller containing a fuzzy estimation system is the principal controller, and the robust controller is designed to dispel the effect of minimum approximation error introduced by the fuzzy estimation system. Moreover, the Taylor linearization technique is employed to derive the linearized model of the fuzzy estimation system so that all the parameters in the fuzzy system could be updated according. The adaptation laws of the control system are derived in the sense of Lyapunov function and Barbalat's lemma, thus the stability of the system can be guaranteed. For comparison, the partial- and full-tuned cases for the parameters in the fuzzy system are simulated. Finally, simulation results verify that the proposed AFBC system can achieve favorable tracking performance for the chaotic system with regard to parameter variations and unknown dynamic function. (C) 2004 Elsevier B.V. All rights reserved.
Growth and characterization of Cd1-x-yZnxMnyTe crystals
(1996-12-01)
Chou, WC
;
Chen, FR
;
Chiang, TY
;
Shin, HY
;
Sun, CY
The Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940 degrees C. All crystals were p-type with resistivity of 10(7) Omega . cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.
Growth and characterization of Cd1-x-yZnxMnyTe crystals
(1996-12-01)
Chou, WC
;
Chen, FR
;
Chiang, TY
;
Shin, HY
;
Sun, CY
The Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940 degrees C. All crystals were p-type with resistivity of 10(7) Omega . cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.
High-pressure phase transitions in Zn0.83Mn0.17Se thin film
(2000-02-28)
Lin, CM
;
Chuu, DS
;
電子物理學系
;
Department of Electrophysics
The energy-dispersive X-ray-diffraction (EDXD) and Raman spectroscopy are used to study phase transitions of Zn0.83Mn0.17Se thin film up to 17.5 and 16.1 GPa, respectively. The EDXD results show that possible zinc blende(B3) to sodium chloride phase(B1) structure transition for Zn0.83Mn0.17Se thin film occurs at 10.0 GPa. The unloading run reveals a reversible phase transition existed in the Zn0.83Mn0.17Se thin film. For micro-Raman spectra at ambient pressure, three Raman peaks are distinct as LO, TO, and Mn local modes in Zn1-xMnxSe bulk. As the pressure is increased to 10.9 GPa, metallization occurs, the LO and Mn local phonon peaks disappear while the two unidentified Raman peaks of TO mode are still observable above the metallization pressure till 17.5 GPa. The phase transition pressure P-t obtained from the results of micro-Raman spectra seems to be in good agreement with that obtained by EDXD measurements. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
High-pressure phase transitions in Zn1-xMxSe (M=Cd, Fe, and Mn)
(1998-07-01)
Lin, CM
;
Chuu, DS
;
Xu, JA
;
Huang, E
;
Chou, WC
Energy-dispersive x-ray diffraction was employed to study pressure-induced phase transitions in Zn0.84Fe0.16Se, Zn0.9Cd0.1Se, and Zn0.76Mn0.24Se crystals up to 21.0, 23.3, and 24.3 GPa, respectively. Our result shows that the B3 to B1 structure transitions for these crystals occurred at 1 1.4 +/- 0.5, 9.5 +/- 0.3, and 9.6 +/- 0.5 GPa, respectively. Compared to the phase-transition pressure (P-t) of ZnSe (14.4 GPa), a reduction of about 3-5 GPa is exhibited in these ternary compounds. This reduction in phase-transition pressure Delta P-t in the ternary compounds suggests that the fractional volume change, (Delta V/V-o), of the B3-B1 phase admixture might be the source of this reduction. Our results indicate that P-t (with respect to the phase transition pressure 14.4 GPa of ZnSe) is related to the fractional volume change (Delta V/V-o) by the expression P-t = [14.4003 + 0.1568 (Delta V/V-o)-0.0281(Delta V/V-o)(2)] GPa. [S0163-1829(98)05426-5].
Hybrid adaptive fuzzy control wing rock motion system with H-infinity robust performance
(2003)
Lin, CT
;
Lee, TT
;
Hsu, CF
;
Lin, CM
;
電控工程研究所
In this paper, a hybrid adaptive fuzzy control (HAFC) system is developed for a wing rock motion system. The design of HAFC system contains three parts: one is an indirect controller, the other is a direct controller and the last is a robust controller. A weighting factor a, which can be adjusted by a tradeoff between plant knowledge and control knowledge, is adopted to sum together the control efforts from the indirect and direct controllers. The robust controller is designed to achieve favorable control performance with a desired robustness. Simulation results demonstrate that the HAFC system can achieve favorable desired tracking performances for unknown the wing rock motion dynamics.
Longitudinal control of vehicle platoon via wavelet neural network
(2004)
Hsu, CF
;
Wang, WJ
;
Lee, TT
;
Lin, CM
;
電控工程研究所
Transportation technology is one of the most influential areas on the human life. There has been an interest in the development of an automated highway system in which high traffic flow rates may be safely achieved Upon entering the automated highway system, the longitudinal control of car-following collision prevention system will drive a vehicle along the fully automated highway. This paper proposes an intelligent wavelet neural network (IWNN) control system for the car-following collision prevention system based on the wavelet neural network (WNN) approach. The WNN combines the capability of artificial neural networks for learning from processes and the capability of wavelet decomposition for control dynamic systems. In the proposed IWNN system, a WNN controller is used to mimic an ideal controller and a robust controller is designed to compensate for the difference between the ideal controller and the WNN controller. The adaptation laws of the IWNN are derived in the sense of Lyapunov stability analysis, so that the stability of the control system can be guaranteed. Finally, simulation results show that the proposed IWNN control system can achieve favorable tracking performance for a safe car-following control.