Browsing by Author "Lin, CN"

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Dissociation of energy-selected c-C3H6S+ studied with threshold photoelectron-photolon coincidence experiments and calculations
(2006-05-10)
Chiang, SY
;
Fang, YS
;
Lin, CN
;
應用化學系
;
Department of Applied Chemistry
The dissociation of energy-selected c-C3H6S+ was investigated in a region 10.2-10.9 eV with a threshold photoelectron-photoion coincidence technique. Branching ratios and average releases of kinetic energy for channel c-C3H6S+ -> H2CS+ + C2H4 were derived from coincidence mass spectra. The measured small releases of kinetic energy near the appearance onset agree with statistical calculations; a linearly extrapolated threshold at 10.39 +/- 0.01 eV agrees with a predicted energy 10.35 eV with the GAUSSIAN-3 method. We discuss plausible mechanisms for c-C3H6S+ dissociating to CH3CS+ + CH3 based on G3B3 calculations to rationalize the absence of CH3CS+ signal in these experiments. (c) 2006 Elsevier B.V. All rights reserved.
Long-period fiber grating effects induced by double-sided loading
(2003-07-01)
Tang, TY
;
Tseng, PY
;
Chiu, CY
;
Lin, CN
;
Yang, CC
Periodical perturbations along an optical fiber can cause power coupling between the core and cladding modes for the applications of spectral filtering and derivative operations. Such perturbations can be generated through periodical loading on fiber. By applying loading onto a fiber with two face-to-face, identical groove structures, it was found that the long-period grating effects were dependent on the relative phase of the two periodical corrugations. Particularly, when the relative phase was zero (crest to crest), spectral filtering effects disappeared completely. The comparisons of such results between the cases of jacketed and unjacketed fibers led to the conclusion that geometric deformation, instead of direct pressure-induced effects, was the dominating mechanism for generating spectral filtering functions in the double-sided loading configuration. The same conclusion can be applied to a singlesided loading device. (C) 2003 Society of Photo-optical Instrumentation Engineers.
The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
(2000-07-01)
Wu, YH
;
Huang, CH
;
Chen, WJ
;
Lin, CN
;
Chin, A
We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 degrees C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0 x 10(10) cm(-2) and 3 x 10(10) eV(-1) cm(-2), respectively, from capacitance-voltage measurements. (C) 2000 The Electrochemical Society. S0013-4651(99)11-083-8. All rights reserved.