Browsing by Author "Lin, CP"

Now showing 1 - 20 of 25

0.1 mu m poly-Si thin film transistors for system-on-panel (SoP) applications
(2005)
Tsui, BY
;
Lin, CP
;
Huang, CF
;
Xiao, YH
;
電子工程學系及電子研究所
Thin active layer, fully-silicided source/drain (S/D), modified Schottky barrier, high dielectric constant (high-k) gate dielectric, and metal gate technologies are integrated to realize high performance TFTs. Devices with 0.1 mu m channel length were fabricated successfully. Low threshold voltage, low subthreshold swing, high effective mobility, low S/D resistance, high on/off current ratio, and good control of threshold voltage are demonstrated.
A field study of induced slope failure in poorly cemented rock
(2003)
Pan, YW
;
Lin, CP
;
Liao, JJ
;
Huang, AB
;
土木工程學系
The paper presents the results of afield study of an induced slope failure and accompanied laboratory and in-situ tests of a poorly cemented soft rock. The project was aimed to examine the full-scale deformation/strength characteristics of soft rock within reservoir bank with geology of poorly cemented rock. Comparison of the results of various tests enabled the clarification of the true properties of the poorly cemented rock. Effect of disturbance was quantitatively investigated. An in-situ study of induced slope failure with well-planed instrumentations looked into the full-size deformation and strength properties of the geomaterial.
A novel 25-nm modified Schottky-barrier FinFET with high performance
(2004-06-01)
Tsui, BY
;
Lin, CP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
High-performance modified Schottky barrier (MSB) FinFET with 25-nm channel length and fully silicided source/drain (S/D) is proposed for the first time. Using an implant-to-silicide technique, an ultrashort and defect-free S/D extension can be formed at temperature as low as 600 degreesC. The MSB FinFET exhibits better current-voltage characteristics than those of published Schottky barrier devices and FinFETs. With 4-nm-thick gate oxide, the I-on /I-off current ratio higher than 10(9) is achieved. The subthreshold swing of 25-nm and 49-nm MSB FinFETs is 83 and 64.5 mV/dec at room temperature. The advantage of low thermal budget relaxes the thermal stability issue for metal gate/high-kappa dielectric integration. It is believed that the proposed MSB FinFET would be a very promising nano device.
An optimization model for Web content adaptation
(2006-05-15)
Jan, RH
;
Lin, CP
;
Chern, MS
;
資訊工程學系
;
Department of Computer Science
This paper considers Web content adaptation with a bandwidth constraint for server-based adaptive Web systems. The problem can be stated as follows: Given a Web page P consisting of n component items d(1), d(2),...,d(n) and each of the component items d(i) having J(i) versions d(i1), d(i2),... d(ut), for each component item d(i) select one of its versions to compose the Web page such that the fidelity function is maximized subject to the bandwidth constraint. We formulate this problem as a linear multi-choice knapsack problem (LMCKP). This paper transforms the LMCKP into a knapsack problem (KP) and then presents a dynamic programming method to solve the KP. A numerical example illustrates this method and shows its effectiveness. (c) 2005 Elsevier B.V. All rights reserved.
Analysis of nonuniform and dispersive time domain reflectometry measurement systems with application to the dielectric spectroscopy of soils
(2003-01-18)
Lin, CP
;
土木工程學系
;
Department of Civil Engineering
[1] A practical time domain reflectometry (TDR) measurement system consists of a cable tester and a nonuniform transmission line. The transmission line includes a coaxial cable, a transitional device, and a measurement probe. Dielectric spectroscopy in a nonuniform transmission line requires a wave propagation model that accounts for multiple reflections in a nonuniform and dispersive TDR measurement system. Spectral analysis and the concept of input impedance were utilized to develop such a model. The system parameters were calibrated using the measured TDR waveform in an aqueous material with known dielectric permittivity. The excellent match between the simulated and measured waveforms validated the wave propagation model. A layer-peeling algorithm was developed, based on the new formulation of the wave propagation model to remove the effect of the cable and transitional device on the measurement by TDR. The dielectric spectrum obtained by solving the scatter function was compared with that obtained by matching waveforms based on a dielectric relaxation model. The latter method was confirmed by the experimental results as being superior to the former at high frequencies if an appropriate dielectric relaxation model was used. Both the Debye relaxation model and the volumetric mixing model could model the dielectric dispersion of soils in the TDR frequency range. The latter method outperforms the former in modeling the dielectric dispersion of soils over the full range of frequencies.
Assessment of soil liquefaction potential using MASW method
(2004)
Lin, CP
;
交大名義發表
;
National Chiao Tung University
The MASW method is a non-invasive method recently developed to estimate shear wave velocity profile from surface wave energy. An efficient and unified wavefield transform technique is introduced for dispersion analysis and on site data quality control. The technique was demonstrated in the assessment of soil liquefaction potential at a site in Yuan Lin, Taiwan. The shear wave velocity and liquefaction potential assessments based on MASW method compares favorable to that based on SCPT shear wave measurements. 2-D shear wave velocity profiles were estimated by occupying successive geophone spreads at several sites in Central Western Taiwan, at some of which sand boils or ground cracks occurred during 1999 Chi Chi earthquake. Liquefaction potential analysis based on MASW imaging was shown to be effective for estimating the extent of potential liquefaction hazard.
Characteristics of Modified-Schottky-Barrier (MSB) FinFETs
(2005)
Lin, CP
;
Tsui, BY
;
電機學院
;
電子工程學系及電子研究所
;
College of Electrical and Computer Engineering
It has been reported that Modified-Schottky-Barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device.
Development and calibration of a TDR extensometer for geotechnical monitoring
(2005-09-01)
Lin, CP
;
Tang, SH
;
交大名義發表
;
National Chiao Tung University
Up-hole reflectometry devices that interrogate passive mechanical transducers are increasingly used in geotechnical instrumentation. One of such a monitoring technique is the time domain reflectometry (TDR). This study utilizes the principle of TDR to devise a TDR extensometer using a waveguide with an impedance mismatch interface inside it. The movement of the impedance mismatch interface is coupled with the displacement of interest such that the time shift in the reflected signal becomes a measure of the displacement. The accuracy of the TDR extensometer is better than +/- 0.5 mm and is not affected by measuring range and cable length. It can be used for applications that require both high accuracy and large displacement range, and is suitable for long-term monitoring in a harsh environment where humidity and lightening surge may cause problems for electronic sensors. The devised extensometer can be combined with existing TDR transducers for groundwater pressure and shear deformation to form an integrated TDR monitoring system for slope stability.
Fabrication and characterization of low turn-on voltage carbon nanotube field emission triodes
(2001-08-01)
Cheng, HC
;
Chen, KJ
;
Hong, WK
;
Tantair, FG
;
Lin, CP
Based on selective growth, carbon nanotubes (CNTs) for low turn-on voltage field emission triodes have been grown via microwave plasma-enhanced chemical vapor deposition. The triode devices fabricated with standard integrated circuit process contain 4 x 4 emitting cells with extraction gates and each individual cell is 4 mum in diameter. With the phosphor-coated indium tin oxide glass as the anode away from the CNTs triodes with similar to1 mm above, the triode devices achieved low turn-on gate voltage of 30 V and high emission current density of 0.7 A/cm(2) at 50 V. The results exhibit CNTs for potential application in field emission display. (C) 2001 The Electrochemical Society.
Frequency domain versus travel time analyses of TDR waveforms for soil moisture measurements
(2003-05-01)
Lin, CP
;
土木工程學系
;
Department of Civil Engineering
When time domain reflectometry (TDR) is applied to the field characterization of soil moisture, the waveforms have typically been analyzed using travel time along the wave guide. The apparent dielectric constant traditionally determined by the travel time analysis using a tangent-line method does not have a clear physical meaning and is influenced by several system and material parameters. The frequency domain analysis, however, can determine the actual frequency-dependent dielectric permittivity and can be performed using a very short probe. This study presents a numerical modeling approach for common unmatched TDR probes to analyze the TDR signals in the frequency domain. This approach is also adopted to examine how TDR bandwidth, probe length, probe impedance, dielectric relaxation, and electrical conductivity affect travel time analysis. Simulation results indicated that, although the effects of TDR bandwidth and probe length could be quantified and calibrated, the calibration equation for soil moisture measurements was still affected by dielectric relaxation and electrical conductivity, because of differences in soil texture and density. The effects of density can be removed by adding a density term to the calibration equation. Correlating with water content the dielectric permittivity at frequencies between 500 MHz and 1 GHz, rather than the apparent dielectric constant, can minimize the influence of soil texture.
High-performance poly-Si TFTs fabricated by implant-to-silicide technique
(2005-03-01)
Lin, CP
;
Mao, YH
;
Tsui, BY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
High-performance poly-Si thin-film transistors (TFTs) with fully silicided source/drain (FSD) and ultrashort shallow extension (SDE) fabricated by implant-to-silicide (ITS) technique are proposed for the first time. Using the FSD structure, the S/D parasitic resistance can be suppressed effectively. Using the ITS technique, an ultrashort and defect-free SDE can also be formed quickly at about 600 degreesC. Therefore, the FSD poly-Si TFTs exhibits better current-voltage characteristics than those of conventional TFTs. It should be noted that the on/off current ratios of FSD poly-Si TFT (W/L = 1/4,mum) is over 3.3 x 10(7), and the field-effective mobility of that device is about 141.6 (cm(2)/Vs). Moreover, the superior short-channel characteristics of FSD poly-Si TFTs are also observed. It is therefore believed that the proposed FSD poly-Si TFT is a very promising TFT device.
High-performance poly-silicon TFTs using HfO2 gate dielectric
(2006-05-01)
Lin, CP
;
Tsui, BY
;
Yang, MJ
;
Huang, RH
;
Chien, CH
High-performance low-temperature poly-Si thin-film transistors (TFTs) using high-kappa (HFO2) gate dielectric is demonstrated for the first time. Because of the high gate capacitance density and thin equivalent-oxide thickness contributed by the high-kappa gate dielectric, excellent device performance can be achieved including high driving current, low subthreshold swing, low threshold voltage, and high ON/OFF current ratio. It should be noted that the O.N-state current of high-kappa. gate-dielectric TFTs is almost five times higher than that of SiO2 gate-dielectric TFTs. Moreover, superior threshold-voltage (V-th) rolloff property is also demonstrated. All of these results suggest that high-kappa gate dielectric is a good choice for high-performance TFTs.
Hot-carrier effects in p-channel modified Schottky-barrier FinFETs
(2005-06-01)
Lin, CP
;
Tsui, BY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
High-performance p-channel modified Schottky-barrier SOI FinFETs (MSB pFinFETs) with low temperature source/drain annealing process was recently suggested for future nano-scale devices. In this letter, the hot-carrier (HC) immunity of the MSB pFinFETs with different gate lengths (L-g) and fin widths (W-f) are presented. The experimental data shows that the MSB pFinFET with narrower W-f has less hot carrier degradation than that with wider W-f. The effects of electrical field in Si fins induced from lateral-gate electrode and the degree of uniformity of source/drain extension are illustrated cautiously by two-dimensional simulation and transmission electron microscopy (TEM) micrographs, respectively. It is found that the devices with narrower W-f have weaker electrical field from gate electrode and better uniformity of source/drain extension resulting in superior hot-carrier immunity. The projected operation voltage at ten years dc lifetime exceeds 1.6 V as the W-f is narrower than 60 nm. It is thus concluded that the MSB pFinFET would be a very promising nano device.
Improvement of field emission characteristics of carbon nanotubes by excimer laser treatment
(2002-10-01)
Chen, KJ
;
Hong, WK
;
Lin, CP
;
Chen, KH
;
Chen, LC
The density of carbon nanotubes (CNTs) deposited by microwave plasma chemical vapor deposition (MPCVD) is extremely high, which results in screening effect in the electric field. To achieve excellent field emission characteristics. an excimer laser treatment (ELT) was introduced to reduce the density of CNTs, Scanning electron microscopy (SEM) micrographs showed reduced densities of the CNTs, and the measurement of electrical characteristics results repealed the improved field emission properties under suitable ELT conditions. The turn-on field decreased from 3 V/mum to 2.1 V/mum. and the emission Current density increased from 5.73 mA/cm(2) to 87.13 mA/cm(2) at the applied field of 5 V/mum.
Loading behavior of shallow foundation on poorly cemented sandstone
(2004)
Liao, JJ
;
Chang, JC
;
Pan, YW
;
Huang, AB
;
Lin, CP
This paper aims to investigate the load bearing behavior and failure mechanism of a shallow foundation on poorly cemented rock. A series of laboratory material and model tests with specimens made of artificial soft rock were conducted. The results of material tests show that the properties of the artificial material are quite close to natural poorly cemented sandstone. The results of model bearing test indicate that a load-settlement curve can be roughly divided into the incipient stage, the linear stage, the yielding stage, and the final stage. The failure zones and mechanism were also identified. Failure zones were divided into the active zone, the transitional zone, and the passive zone. It was found that the bearing behavior on poorly cemented sandstone is distinct from the cases on hard rock or soil, with both plasticity and brittle characteristics. The bearing capacity formulas commonly used for soil or hard rock is not necessarily suitable for the case of poorly cemented soft sandstone.
Low turn-on voltage field emission triodes with selective growth of carbon nanotubes
(2001-11-01)
Chen, KJ
;
Hong, WK
;
Lin, CP
;
Chen, KH
;
Chen, LC
A low turn-on voltage, field emission triode array has been fabricated using the selective deposition of carbon nanotubes (CNTs) in a microwave plasma chemical vapor deposition (MPCVD) system. The field emission triodes exhibited a low turn-on voltage of 13 V and a large emission current of 23 muA with the gate voltage at 60 V. Short-term stress reveals a 10% current fluctuation within 1800 sec. The excellent electric properties suggest that the array shows potential for application in field emission displays and vacuum microelectronics.
Microphone array signal processing with application in three-dimensional spatial hearing
(2005-04-01)
Bai, MR
;
Lin, CP
;
機械工程學系
;
Department of Mechanical Engineering
Microphone arrays are known to enhance the directionality and signal-to-noise ratio (SNR) over single-channel sensors. This is considered beneficial in many applications such as video-conferencing systems and hearing aids. However, this advantage comes at the price of the sensation of spatial hearing. The spatial cues due to diffractions of the head and torso are lost if the array is not fitted in the ears. In this paper we present a system that incorporates binaural hearing synthesis into array signal processing, in an attempt to recover the three-dimensional sound image that a human listener would naturally perceive. In the system, the superdirective beamformer is exploited to estimate the direction of arrival (DOA) of the incoming sound. The spatial sound image is restored by steering the beam to the direction found in the DOA session and filtering the array output with the corresponding Head Related Transfer Functions (HRTF). The algorithms have been implemented in real-time fashion using a digital signal processor. Objective and subjective experiments were performed to validate the proposed system. The experimental results showed that the accurate localization of the sound source is achievable using the array system. (c) 2005 Acoustical Society of America.
Modeling information ethics: The joint moderating role of locus of control and job insecurity
(2003-12-01)
Lin, CP
;
Ding, CG
;
經營管理研究所
;
Institute of Business and Management
Information unethical behavior is concerned with ethical behavioural conflicts in the use of information, information technologies, and information systems (Kuo and Hsu, 2001). This study examines the combination of locus of control (LOC) and job insecurity (JI) as a joint moderator on the decision making process for information ethical behavioral intentions. A conceptual model is proposed to see the joint moderating role of LOC and JI. In the model, ethical behavioral intentions are influenced directly by ethical attitude, personal values, and perceived behavioural control. Simultaneously, personal values also indirectly influence ethical behavioral intentions through the mediation of ethical attitude. The causal relationships are moderated by the joint moderator. Notably, the moderating effects were simultaneously examined using data from undergraduates in the MIS department of a college. The influences of the ethical attitude and personal values on ethical behavioral intentions are found to be similar for those with external locus of control and insecurity perception (Confusionists) and those with internal locus of control and security perception (Controlists). Furthermore, the influences of personal values on ethical attitude, and of perceived behavioural control on ethical behavioral intentions, are both greater for Controlists than Confusionists. Implications of the empirical findings are discussed.
Monitoring displacement distribution within the rock mass during a plate load test
(2003)
Huang, AB
;
Liao, JJ
;
Pan, IW
;
Lin, CP
;
土木工程學系
A fiber optic sensor system has been developed specifically for monitoring displacements within geomaterials. Optic fiber Bragg gratings were fixed to the sides of a slender piece of plastic rod as a means for displacement measurements. An attempt was made to monitor the local displacements within an artificial soft rock sample in a laboratory model plate load test. Two 8 mm diameter fiber optic sensored Delrin rods were inserted into the rock mass at various depths below the model foundation. The amount and distribution of the displacements caused by the plate load were measured through the flexural strains occurred in the fiber optic sensors. Initial results have indicated that the technique was capable of detecting relative displacements at least for the case of a model plate load test. Reasonable relationship between moduli and strains could be derived from these displacement measurements and estimated average stresses based on Boussinesq theory. This paper describes the laboratory set up of the sensor system; present the results of the plate load test and discusses the implications in the use of fiber optic sensors for field local displacement measurements.
Multi-station analysis of surface wave dispersion
(2004-12-01)
Lin, CP
;
Chang, TS
;
土木工程學系
;
Department of Civil Engineering
Methods based on multi-station recordings are presented for constructing the experimental dispersion curve of Rayleigh waves. Multi-station recording permits a single survey of a broad depth range, high levels of redundancy with a single field configuration, and the ability to adjust the offset, effectively reducing near field and far field effects. A method based on the linear regression of phase angles measured at multiple stations is introduced for determining data quality and filtering criteria. This method becomes a powerful tool for on site quality control in, real time. The effects of multiple modes and survey line parameters, such as near offset, receiver spacing, and offset range, are investigated. Parametric studies result in,general guidelines for the field data acquisition. A case study demonstrates how to easily deploy commonplace seismic refraction equipment to simultaneously record data for P-wave tomographic interpretation and multi-station analysis of surface wave. (C) 2004 Elsevier Ltd. All rights reserved.