Browsing by Author "Lin, Cheng-Li"

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Effect of NH(3) Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
(2011-03-01)
Chen, Yu-Ting
;
Chen, Kun-Ming
;
Lin, Cheng-Li
;
Yeh, Wen-Kuan
;
Huang, Guo-Wei
The effects of post-NH(3) plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-kappa/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk-and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-kappa layer. In this paper, appropriate post-NH(3) plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-kappa/metal-gate nMOSFET with a Gd cap layer.
Effect of NH3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
(2011-03-01)
Chen, Yu-Ting
;
Chen, Kun-Ming
;
Lin, Cheng-Li
;
Yeh, Wen-Kuan
;
Huang, Guo-Wei
The effects of post-NH3 plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-kappa/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk-and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-kappa layer. In this paper, appropriate post-NH3 plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-kappa/metal-gate nMOSFET with a Gd cap layer.
Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory
(2010-08-01)
Kang, Tsung-Kuei
;
Liao, Ta-Chuan
;
Lin, Cheng-Li
;
Wu, Wen-Fa
;
電子工程學系及電子研究所
Pd nanocrystals (NCs) are successfully embedded in a TaN/SiO(2)/HfAlO/Si structure The initial memory window increases at a higher rate with increasing fabrication temperature of Pd NCs compared with the linear variation of Pd NC density, which is related to the thermally induced neutral traps in the HfAlO film around Pd NCs After manufacturing a TaN/SiO(2)/Pd NCs/HfAlO/Si/Al structure, the subsequent N(2) plasma treatment is conducted at 300 degrees C for 3 min The number of leakage current paths in the SiO(2) blocking layer adjacent to TaN is clearly reduced, but that of leakage current paths in SiO(2)/HfAlO around Pd NCs is slightly increased owing to the thermal stress The thermally induced neutral traps in the HfAlO film around the Pd NCs can be passivated by nitrogen atoms, which leads to the improvement of the final memory window for the Pd NC samples fabricated at 600-700 degrees C However, the intrinsic traps in the HfAlO film play an important role in memory characteristic and the final memory window is reduced by thermal densification for the Pd NC samples fabricated at 500 degrees C (C) 2010 The Japan Society of Applied Physics
Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO(2) tunnel layer
(2011-07-01)
Kang, Tsung-Kuei
;
Liu, Han-Wen
;
Wang, Fang-Hsing
;
Lin, Cheng-Li
;
Liao, Ta-Chuan
Stacked HfAlO-SiO(2) tunnel layers are designed for Pd nanocrystal nonvolatile memories. For the sample with 1.5 nm-HfAlO/3.5 nm-SiO(2) tunnel layer, a smaller initial memory window is obtained compared to the sample with 3.5 nm-HfAlO/1.5 nm-SiO(2) tunnel layer. Owing to the thermally induced traps in HfAlO-SiO(2) films are located at a farther distance from the Si substrate and more effective blocking of charge leakage by asymmetric tunnel barrier, a larger final memory window and better retention characteristic can be obtained for Al/blocking oxide SiO(2)/Pd NC5/1.5 nm-HfAlO/3.5 nm-SiO(2)/Si structure. A N(2) plasma treatment can further improve the memory characteristics. Better memory characteristics can be obtained for Pd-nanocrystal-based nonvolatile memory with an adequate thickness ratio of HfAlO to SiO(2). (C) 2011 Elsevier Ltd. All rights reserved.
Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO2 tunnel layer
(2011-07-01)
Kang, Tsung-Kuei
;
Liu, Han-Wen
;
Wang, Fang-Hsing
;
Lin, Cheng-Li
;
Liao, Ta-Chuan
Stacked HfAlO-SiO2 tunnel layers are designed for Pd nanocrystal nonvolatile memories. For the sample with 1.5 nm-HfAlO/3.5 nm-SiO2 tunnel layer, a smaller initial memory window is obtained compared to the sample with 3.5 nm-HfAlO/1.5 nm-SiO2 tunnel layer. Owing to the thermally induced traps in HfAlO-SiO2 films are located at a farther distance from the Si substrate and more effective blocking of charge leakage by asymmetric tunnel barrier, a larger final memory window and better retention characteristic can be obtained for Al/blocking oxide SiO2/Pd NC5/1.5 nm-HfAlO/3.5 nm-SiO2/Si structure. A N-2 plasma treatment can further improve the memory characteristics. Better memory characteristics can be obtained for Pd-nanocrystal-based nonvolatile memory with an adequate thickness ratio of HfAlO to SiO2. (C) 2011 Elsevier Ltd. All rights reserved.
The use of adjunctive traditional Chinese medicine therapy and survival outcome in patients with head and neck cancer: a nationwide population-based cohort study
(2015-12-01)
Lin, Hung-Che
;
Lin, Cheng-Li
;
Huang, Wen-Yen
;
Shangkuan, Wei-Chuan
;
Kang, Bor-Hwang
Background: Traditional Chinese medicine (TCM) is widely used in the treatment of patients with several types of cancer. However, no large-scale clinical studies have evaluated whether TCM is associated with better survival in patients with head and neck cancer (HNC). Methods: The Taiwan National Health Insurance Research Database was used to conduct a retrospective cohort study of patients with HNC between 2001 and 2011. The patients with HNC were separated into TCM users and non-users, and Cox regression models were applied to determine the association between the use of TCM and survival outcome. Results: The TCM and comparison cohorts comprised data for 2966 and 2670 patients, respectively. The mean age was 51.3 years in the TCM cohort and 51.7 years in the comparison cohort. Multivariate analysis demonstrated that the use of TCM was significantly associated with lower risk of all-cause mortality by 32% (adjusted hazard ratio, 0.68; 95% confidence interval, 0.62-0.75). Patients with longer TCM use had a lower mortality rate (P for trend<0.001). Conclusions: Our study showed that adjunctive therapy with TCM is associated with higher survival outcome. However, some limitations exist, such as the lack of information of cancer stage. In addition, causality cannot be assessed with this retrospective study. A randomized controlled trial to test the effect of adjunctive TCM therapy in HNC patients is needed.