Browsing by Author "Lin, Chi-Ching"

Now showing 1 - 5 of 5

Composite lattice pattern formation in a wide-aperture thin-slice solid-state laser with imperfect reflective ends
(2006-11-24)
Otsuka, Kenju
;
Miyasaka, Yoshihiko
;
Narita, Tatsuro
;
Chu, Shu-n Chu
;
Lin, Chi-Ching
We observed self-formations of multiple lasing channels and two-dimensional lasing patterns consisting of composite local modes having different lasing frequencies in a laser-diode-pumped wide-aperture thin-slice solid-state laser with imperfect reflective end surfaces. Global patterns resembling higher-order Hermite-Gaussian modes or possessing N-fold rotational symmetries were experimentally shown to appear due to the standard polished surface roughness of closely spaced reflective ends and nonlinear modal interactions.
Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate
(2006-09-01)
Hou, Chih-Yuan
;
Lin, Chi-Ching
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using a-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.
Improve the electrical properties of NILC poly-Si films using a gettering substrate
(2007)
Wu, YewChung Sermon
;
Hu, Chen-Ming
;
Lin, Chi-Ching
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, this technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using alpha-Si-coated wafers as Ni-gettering substrates. After gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were reduced.
Improving the electrical properties of NILC poly-Si films using a gettering substrate
(2007-11-01)
Hu, Chen-Ming
;
Wu, YewChung Sermon
;
Lin, Chi-Ching
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using a-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.
Nonlinear dynamics in thin-slice Nd : YAG ceramic lasers: Coupled local-mode laser model
(2006-08-21)
Otsuka, Kenju
;
Narita, Tatsuro
;
Miyasaka, Yoshihiko
;
Lin, Chi-Ching
;
Ko, Jing-Yuan
The authors propose a coupled spatially distributed local-mode laser model for understanding self-induced high-speed modulations in Nd:YAG ceramic lasers with laser-diode end pumping, which critically depend on pump positions. In addition to complicated high-speed modulations, quasiperiodic and chaotic relaxation oscillations have been demonstrated experimentally and reproduced by numerical simulation of the model of coupled local-mode lasers. Q-switching-like periodic spiking pulsations have been also observed and reproduced numerically by assuming saturable absorber type of inclusions in grain boundaries.