Browsing by Author "Lin, Chia-Hung"

Now showing 1 - 10 of 10

A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
(2010-05-01)
Chang, Kow-Ming
;
Chang, Chih-Tien
;
Chao, Kuo-Yi
;
Lin, Chia-Hung
;
電子工程學系及電子研究所
A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75-100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.
A Survey on Deep Learning-Based Vehicular Communication Applications
(1970-01-01)
Lin, Chia-Hung
;
Lin, Yu-Chien
;
Wu, Yen-Jung
;
Chung, Wei-Ho
;
Lee, Ta-Sung
Besides the use of information transmission, vehicular communications also perform an essential role in intelligent transportation systems (ITS) for exchanging critical driving information among end users, vehicles, and infrastructures. Moreover, to enhance the understanding of the local environment, increasingly more data are collected by sensors, inducing an extensive use of deep learning (DL)-based algorithms in ITS. To further promote the development of DL-based algorithms in ITS, in this paper, we present a concise introduction of DL technologies. Then, we conduct an in-depth investigation on two popular DL-based applications used in ITS, traffic flow forecasting and trajectory prediction, focusing onwhenandhowthe authors employ different DL models and training schemes in these tasks. Finally, we raise two existing problems while employing DL-based algorithms in practical ITS and further discuss certain recent advances in DL-based research to tackle these challenges. To encourage more researchers to focus on the development of DL-based algorithms in ITS for a better world, we hope this paper can be treated as an informational material for prospective researchers, which contains the essential background knowledge of DL-based ITS applications; we also hope this paper will encourage experienced researchers to counter the open challenges and achieve a technical breakthrough to ITS.
Augmenting VR/AR Applications with EEG/EOG Monitoring and Oculo-Vestibular Recoupling
(2016-01-01)
Zao, John K.
;
Jung, Tzyy-Ping
;
Chang, Hung-Ming
;
Gan, Tchin-Tze
;
Wang, Yu-Te
Head-mounted virtual reality and augmented reality displays (a. k. a. VR/AR goggles) created a revolutionary multimedia genre that is seeking ever-broadening applications and novel natural human interfaces. Adding neuromonitoring and neurofeedback to this genre is expected to introduce a new dimension to user interaction with the cyber-world. This study presents the development of a Neuromonitoring VR/AR Goggle armed with electroencephalo- gram and electrooculogram sensors, programmable milli-Ampere current stimulators and wireless fog/cloud computing support. Beside of its potential use in mitigating cybersickness, this device may have potential applications in augmented cognition ranging from feedback-controlled perceptual training to on-line learning and virtual social interactions. A prototype of the device has been made from a Samsung Gear VR for S6. This study explains its technical design to ensure precision data sampling, synchronous event marking, real-time signal processing and big data cloud computing support. This study also demonstrates the effective-ness in measuring the event-related potentials during a visual oddball experiment.
Fabrication of whitely luminescent silicon-rich nitride films by atmospheric pressure chemical vapor deposition
(2008-06-01)
Lin, Chia-Hung
;
Uen, Wu-Yih
;
Huang, Yen-Chin
;
Li, Zhen-Yu
;
Liao, Sen-Mao
Silicon-rich nitride (SRN) films that can exhibit an intense white-light emission were fabricated by atmospheric pressure chemical vapor deposition. SRN films were deposited on Si substrates using gaseous SiH(2)Cl(2) (DCS) and NH(3) as the source materials for Si and N, respectively. The deposition temperature was kept at 850 degrees C, and H(2) was used as the carrier gas with its flow rate modulated to maintain chamber pressure at 1 atm during the deposition. The optical properties of films obtained at various deposition times from 15 to 60 min were examined by photoluminescence (PL) measurement. An intense luminescence band (1.5-3.5 eV) was observed by the naked eye for all as-deposited samples. Besides, time-resolved PL exhibited a short radiative lifetime of about 1 ns for SRN films. Moreover, high resolution plan-view transmission electron microscopy demonstrated the existence of Si dots in SRN films with the dot sizes ranging from 2 to 6 nm and a dot density of about 4 x 10(12)/cm(2). On the basis of the results obtained, we considered that the related luminescence mechanism for SRN films is connected to crystalline Si dots produced therein.
Interference avoidance and cancellation in automotive OFDM radar networks
(1970-01-01)
Lin, Yu-Chien
;
Lee, Ta-Sung
;
Lin, Chia-Hung
;
交大名義發表
;
電信工程研究所
With increasing use of millimeter-wave radars in driving safety applications, interference between vehicles becomes a significant issue. Moreover, oscillator imperfections and relative velocity effects induce inter-carrier interference (ICI) owing to frequency offset, leading to degradation of target detection. In this paper, time-frequency resources are divided into several orthogonal logical channels according to the time-frequency division (TFD) scheme. We propose a two-stage interference mitigation method. First, an interference avoidance technique is designed for each piece of radar equipment (RE) to select logical channels with the least ICI. Then, each RE reconstructs and cancels interference according to estimated parameters based on the proposed interference cancellation technique. Computer simulations reveal that the proposed interference avoidance technique can approximately achieve the performance of ground truth, especially when the number of interferers is small. In addition, noise enhancement effects can be effectively mitigated through the proposed cancellation technique.
Label-Free Impedimetric Immunosensors Modulated by Protein A/Bovine Serum Albumin Layer for Ultrasensitive Detection of Salbutamol
(2020-02-01)
Lin, Chia-Hung
;
Lin, Ming-Jie
;
Huang, Jie-De
;
Chuang, Yu-Sheng
;
Kuo, Yu-Fen
The sensing properties of immunosensors are determined not only by the amount of immobilized antibodies but also by the number of effective antigen-binding sites of the immobilized antibody. Protein A (PA) exhibits a high degree of affinity with the Fc part of IgG antibody to feasibly produce oriented antibody immobilization. This work proposes a simple method to control the PA surface density on gold nanostructure (AuNS)-deposited screen-printed carbon electrodes (SPCEs) by mixing concentration-varied PA and bovine serum albumin (BSA), and to explore the effect of PA density on the affinity attachment of anti-salbutamol (SAL) antibodies by electrochemical impedance spectroscopy. A concentration of 100 mu g/mL PA and 100 mu g/mL BSA can obtain a saturated coverage on the 3-mercaptoproponic acid (MPA)/AuNS/SPCEs and exhibit a 50% PA density to adsorb the amount of anti-SAL, more than other concentration-varied PA/BSA-modified electrodes. Compared with the randomly immobilized anti-SAL/MPA/AuNS/SPCEs and the anti-SAL/PA(100 mu g/mL):BSA(0 mu g/mL)/MPA/AuNS/SPCE, the anti-SAL/PA(100 mu g/mL): BSA(100 mu g/mL)/MPA/AuNS/SPCE-based immunosensors have better sensing properties for SAL detection, with an extremely low detection limit of 0.2 fg/mL and high reproducibility (<2.5% relative standard deviation). The mixture of PA(100 mu g/mL):BSA(100 mu g/mL) for the modification of AuNS/SPCEs has great promise for forming an optimal protein layer for the oriented adsorption of IgG antibodies to construct ultrasensitive SAL immunosensors.
Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N(2) and H(2) atmospheres
(2009-03-01)
Lin, Chia-Hung
;
Uen, Wu-Yih
;
Lan, Shan-Ming
;
Huang, Yen-Chin
;
Liao, Sen-Mao
This work examines possible luminescence mechanisms of silicon-rich nitride (SRN) films that were fabricated by atmospheric pressure chemical vapor deposition (APCVD). Under an ambient gas of either H(2) or N(2), two SRN films were deposited using the same precursors of Si and N. While photoluminescence (PL) measurements of both as-deposited specimens revealed an intense luminescence band (1.8-3.8 eV), which was observable by the naked eye, a detailed examination of the high energy band of the PL spectra over 2.8 eV yielded different results for those samples that were fabricated in different ambiences. To determine the reason for these differences, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy were conducted, suggesting unique chemical bonds and elemental ratio of nitrogen to silicon in SRN films. Further analysis involving plan-view high-resolution transmission electron microscopic observations of SRN films demonstrated the embedding of Si quantum dots (Si QDs), but with some differences depending on the deposition environment. Analyses of the results obtained suggest that the emission from SRN films that were deposited by APCVD is not only dominated by the quantum confinement effect of Si QDs, but also subordinately affected by the surface states around these Si QDs.
Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N-2 and H-2 atmospheres
(2009-03-01)
Lin, Chia-Hung
;
Uen, Wu-Yih
;
Lan, Shan-Ming
;
Huang, Yen-Chin
;
Liao, Sen-Mao
This work examines possible luminescence mechanisms of silicon-rich nitride (SRN) films that were fabricated by atmospheric pressure chemical vapor deposition (APCVD). Under an ambient gas of either H-2 or N-2, two SRN films were deposited using the same precursors of Si and N. While photoluminescence (PL) measurements of both as-deposited specimens revealed an intense luminescence band (1.8-3.8 eV), which was observable by the naked eye, a detailed examination of the high energy band of the PL spectra over 2.8 eV yielded different results for those samples that were fabricated in different ambiences. To determine the reason for these differences, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy were conducted, suggesting unique chemical bonds and elemental ratio of nitrogen to silicon in SRN films. Further analysis involving plan-view high-resolution transmission electron microscopic observations of SRN films demonstrated the embedding of Si quantum dots (Si QDs), but with some differences depending on the deposition environment. Analyses of the results obtained suggest that the emission from SRN films that were deposited by APCVD is not only dominated by the quantum confinement effect of Si QDs, but also subordinately affected by the surface states around these Si QDs.
On Gray Labeling for Downlink Non-Orthogonal Multiple Access Without SIC
(2016-09)
Shieh, Shin-Lin
;
Lin, Chia-Hung
;
Huang, Yu-Chih
;
Wang, Chin-Liang
;
傳播研究所
The impact of labeling a multilevel coding scheme with pulse amplitude modulation constellation in downlink non-orthogonal multiple access (NOMA) systems is studied. Particular interest is paid to the case where the strong user\'s receiver does not perform successive interference cancellation (SIC) before decoding its desired message. With judiciously chosen parameters, it was shown in a recent work that the considered scheme can approach the capacity region to within a constant gap. In this letter, analytic and extensive simulation results are given to show that Gray labeling provides better performance than non-Gray labeling and natural labeling for the scheme in terms of the symbol error rate, block error rate, and epsilon-feasible rate. Simulation results also indicate that the performance gap between the case with SIC and that without SIC for Gray labeling can be further bridged, which suggests the possibility of avoiding SIC in downlink NOMA.
Optimal Inter-Constellation Rotation Based on Minimum Distance Criterion for Uplink NOMA
(2019-01-01)
Lin, Chia-Hung
;
Shieh, Shin-Lin
;
Chi, Tzung-Cheng
;
Chen, Po-Ning
;
電信工程研究所
Non-orthogonal multiple access (NOMA) has recently emerged as a promising multiple access technique for LTE enhancements and 5G due to its better cell coverage and potentially higher throughput than the traditional orthogonal multiple access. In its simplest form that superimposes only two constellations in the power domain, we investigate the optimal inter-constellation rotation based on the minimum distance (MD) criterion over an uplink NOMA scenario in this paper. In comparison with existing work that adopts constellation-constrained mutual information (MI) as the optimization criterion and hence can only determine the optimal inter-constellation rotation angle numerically, closed-form expressions for the MD-maximizing inter-constellation rotation angle as well as its achievable largest minimum distance among joint constellation points can be obtained for usual combinations of modulation schemes. Since the MD-maximizing inter-constellation rotation has nothing to do with the signal-to-noise ratio (SNR), as contrary to the MI-maximizing inter-constellation rotation, a more feasible SNR-independent system formulation can be established. Simulation results show that the MD-maximizing design not only can maintain a much more robust error performance than the SNR-dependent MI-maximizing design but achieves a better fairness among users.