Browsing by Author "Lin, Chia-Min"

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A Novel LTPS-TFT-Based Charge-Trapping Memory Device with Field-Enhanced Nanowire Structure
(2009)
Liao, Ta-Chuan
;
Chen, Sheng-Kai
;
Yu, Ming H.
;
Wu, Chun-Yu
;
Kang, Tsung-Kuei
A novel gate-all-around low-temperature poly-Si (LIPS) thin-film transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory with field-enhanced nanowire (FEN) structure has been proposed to improve the program and erase (P/E) performance. Each nanowire inherently had three sharp corners fabricated simply by sidewall spacer formation to obtain high local electric fields. The field-enhanced carrier tunneling via such a structure led to faster PIE speed and wider memory window for the FEN-TFT SONOS as compared to the conventional planar (CP) counterpart. The improvement was also further verified with the simulation results. Such a high-performance FEN-TFT SONOS memory with process simplicity is very suitable for future system-on-panel (SOP) applications.
Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
(2011-09-01)
Kang, Tsung-Kuei
;
Liao, Ta-Chuan
;
Lin, Chia-Min
;
Liu, Han-Wen
;
Wang, Fang-Hsing
The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral-solidification poly-Si film. As compared with the planar ones, the GAA-SCLNC TFTs showed more excellent characteristics. The results clearly show that the variations of device characteristics can be reduced by increasing the numbers of NWs in the channels and an average mobility above 410 cm(2)/V . s with a low standard deviation can be achieved for the GAA-SCLNC TFTs with 20-NW channels.
Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
(2012-02-27)
Liao, Ta-Chuan
;
Kang, Tsung-Kuei
;
Lin, Chia-Min
;
Wu, Chun-Yu
;
Cheng, Huang-Chung
In this letter, gate-all-around (GAA) polycrystalline silicon thin-film transistors (TFTs) with self-aligned grain-growth channels were fabricated using excimer laser crystallization (ELC) on a recessed-nanowire (RN) structure. Via the RN structure constructed by a simple sidewall-spacer formation, location-controlled nucleation and volume-confined lateral grain growth within the RN body during ELC process have been demonstrated with only one perpendicular grain boundary in each nanowire channel. Because of the high-crystallinity channel together with GAA operation mode, the proposed GAA-RN TFTs show good device integrity of lower threshold voltage, steeper subthreshold slope, and higher field-effect mobility as compared with the conventional planar counterparts. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691184]
Novel Omega-Shaped-Gated TFT SONOS Memory
(2009)
Liao, Ta-Chuan
;
Chen, Sheng-Kai
;
Kang, Tsung-Kuei
;
Hsu, Pang-Yu
;
Lin, Chia-Min
A novel omega-shaped-gated (Omega-Gate) polycrystalline-silicon thin-film transistor (TFT) silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory with field-enhanced nanowire (FEN) structure has been proposed to improve the program and erase (P/E) performance. Each nanowire inherently had twin sharp corners fabricated simply by sidewall spacer formation to obtain high local electric fields. The field-enhanced carrier tunneling via such a structure led to faster P/E speed and wider memory window for the Omega-Gate SONOS as compared to the conventional planar (CP) counterpart. Such an Omega-Gate-TFT SONOS memory using a simple process is very suitable for future system-on-panel applications.
The Optimization of Plasma-Activated Water Treatments to Inactivate Salmonella Enteritidis (ATCC 13076) on Shell Eggs
(2019-10-01)
Lin, Chia-Min
;
Chu, Yu-Chi
;
Hsiao, Chun-Ping
;
Wu, Jong-Shinn
;
Hsieh, Chang-Wei
Egg is a regularly consumed food item. Currently, chlorinated water washing is the most common practice used to disinfect eggs, but this process has a negative environmental impact. A new physical technique, plasma-activated water (PAW), has been demonstrated to possess effective antibacterial activities without long-term chemical residue. In this study, air PAW was used to inactivate Salmonella enterica serovar Enteritidis on shell eggs. Different combinations of activation parameters, including water sources (reverse osmotic (RO) water, tap water), power (40 W, 50 W, 60 W) and activation time (10 min, 20 min, 30 min), were evaluated. The oxidation-reduction potential (ORP) and pH values of each combination were measured, and their antibacterial activity was tested in a bacterial suspension. Higher antibacterial activities, higher ORP values, and lower pH values were obtained with higher power, longer activation time, and lower water hardness. The antibacterial activities of PAW decreased rapidly by increasing the storage time both at room and refrigeration temperatures. Afterwards, RO water was pre-activated for 20 min at 60 W, and then the eggs inoculated with S. enteritidis were placed into PAW for 30 s, 60 s, 90 s, or 120 s with a plasma on-site treatment in the water. More than a 4 log reduction was obtained with 60-s and 120-s treatments. The results showed that the freshness indexes of the eggs treated with PAW were similar to those of the untreated controls and better than those of the eggs treated with commercial processes. In addition, observation under a scanning electron microscope also showed less surface damage of the cuticle on the PAW-treated eggs than on the commercially treated eggs. The results of this study indicate that PAW could be an effective antibacterial agent with less damage to the freshness of shell eggs than commercial methods.