Browsing by Author "Lin, Chien-Liang"

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FPGA-Oriented Real-Time EMD-Based Breath Signal Processing System on ARM11 MPCore Platform
(2018-01-01)
Lu, Tsung-Che
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Lin, Chien-Liang
;
Chen, Pei-Yu
;
Lan-Da Van
;
資訊工程學系
In this paper, a complete FPGA-oriented real-time empirical mode decomposition (EMD)-based breath signal processing system on ARM11 MPCore platform is developed. The system consists of three subsystems including biomedical signal acquisition, FPGA-oriented EMD accelerator and EMD processing result display. In this work, the previous published multiple stopping criteria and high IMFs Application Specific Integrated Circuit (ASIC)-oriented EMD accelerator is deployed to FPGA of ARM 11 MPCore platform such that the computation time of the overall system can he reduced. An external SRAM architecture in ARM 11 MPCore platform is adopted to process a large amount of data. The three subsystems are connected by a high speed internet such that real time data transportation is achieved. From the evaluation results, for 10K data size, the FPGA-oriented EMD accelerator can speed up by 29.21 times, 20.20 times, and 15.47 times compared with ARM11 processor running single core, dual cores, and four cores, respectively.
Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides
(2019-12-01)
Liu, Chien
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Tung, Yi-Chun
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Wu, Tian-Li
;
Cheng, Chun-Hu
;
Tseng, Chih-Yang
Herein, the gamma-ray irradiation effect on ferroelectric HfAlO(x)capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlO(x)with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlO(x)due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlO(x)capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.
High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing
(2020-04-01)
Liu, Chien
;
Chen, Hsuan-Han
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Tung, Yi-Chun
;
Wang, Wei-Chun
;
Huang, Zhong-Ying
In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics
Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides
(2018-01-01)
Liu, Chien
;
Fan, Chia-Chi
;
Tseng, Chih-Yang
;
Hsu, Hsiao-Hsuan
;
Cheng, Chun-Hu
In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAIO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAIO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.
Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides
(2019-08-01)
Chang, Tun-Jen
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Liu, Chien
;
Fan, Chia-Chi
;
Hsu, Hsiao-Hsuan
;
Chen, Hsuan-Han
In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A > 10(6) stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 x 10(7) cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.
Loudspeaker system having sensorless bass compensation
(2007-09-20)
Bai, Ming-Shian
;
Lee, Chih-Chung
;
Lin, Chien-Liang
The present invention compensates bass frequency for a loudspeaker without using any sensor. The strength and stability of the loudspeaker are enhanced and the working frequency is lowered too. Adaptive loudnesses for various spaces are set. And the parameter drift owing to long-term operation is restrained as well.