Browsing by Author "Lin, Chien-Yu"

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Abnormal Transconductance Enhancement under Positive Bias Stress in Nanoscale n-Channel Fin Field-Effect-Transistors
(2016)
Liu, Kuan-Ju
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Chang, Ting-Chang
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Lin, Chien-Yu
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Chen, Ching-En
;
Tsai, Jyun-Yu
This work demonstrates an abnormal transconductance (GM) enhancement after positive bias stress (PBS) in n-channel high-k/metal gate stacked fin-field-effect-transistors. This abnormal GM enhancement is observed only in short channel devices. With the speculation that hole-trapping-induced electron accumulation is the dominant mechanism, PBS with floating source and drain is adopted as an investigative approach. This, together with the electric field simulation, verifies that hole-trapping in the HfO2 and SiN near the gate corner induces electron accumulated at the ends of the channel length. Such a phenomenon results in a shortening of effective channel length and further GM enhancement. (C) 2016 The Electrochemical Society. All rights reserved.
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
(2017-12-31)
Lin, Chien-Yu
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Chang, Ting-Chang
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Liu, Kuan-Ju
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Chen, Li-Hui
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Chen, Ching-En
This research investigates the mechanism of abnormal transconductance (Gm) and abnormal charge pumping current (I-CP) in body-tied partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. The I-CP second hump region increases with channel length, yet is not affected by channel width. The cross-sectional view of the L-gate structure along the width direction demonstrates that a part of the poly gate area near the body contact is covered by a P+ implant, inducing a parasitic channel under the P+ poly gate. This parasitic channel leads to the abnormal Gm and I-CP hump, and such mechanism is further verified by body floating devices.
Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs
(2017-06-01)
Lin, Chien-Yu
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Chang, Ting-Chang
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Liu, Kuan-Ju
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Chen, Li-Hui
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Tsai, Jyun-Yu
This letter studies the effects of hot carrier stress (HCS) in laterally diffused silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. After HCS, threshold voltage and subthreshold swing degrade, while the ON-state current exhibits degradation after an abnormal spike due to hole trapping in the resistprotective oxide. Impact ionization simulation shows that low doping concentrations in the drift region cause a severe Kirk effect under HCS and more severe degradation at higher gate voltages. However, degradation in the channel contrasts with the simulation result, which suggests an additional mechanism. Variable temperature HCS confirms that channel degradation is instead dominated by temperature.
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
(2018-02-01)
Yang, Chung-I
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Bo-Wei
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Chou, Wu-Ching
This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal gate are investigated. In devices with shorter metal gate lengths, an abnormal rise in capacitance at the off-state in capacitance-voltage (C-V) characteristic curves can be observed. This can be attributed to the stronger electric field induced by the edge of the metal gate under bias sweep when the metal gate length is shorter than the IGZO layer length. Light illumination measurements indicate a negative shift in threshold voltage and an increase in subthreshold-leakage current regardless of relative metal gate length. Moreover, negative threshold voltage shift becomes more severe with a more obvious hump in C-V characteristic curves under back-light illumination of a shorter width device, a phenomenon which has been verified by simulation.
Design of Application Specific Throughput Processor for Matrix Operations
(2015)
Wu, Ping-Ju
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Lin, Chien-Yu
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Lai, Bo-Cheng Charles
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In modern computation routines, matrix operations are broadly used in many scientific realms, ranging from high performance supercomputers to resource constrained embedded devices. Previous studies have revealed that the computation efficiency of matrix operations is significantly determined by the data accesses behavior of the computation platform. This paper introduces an integrated multicore system, including software stacks and hardware modules that can accelerate matrix operations and reduce data access overhead. With the proposed hardware module, the performance of our multicore embedded platform can improve up to 24.09%. Besides the hardware design, we also develop a framework that can facilitate the prototyping of embedded system designs, including functional verification of hardware modules as well as co-simulation with high level OpenCL language.
Enhancing Utilization of SIMD-Like Accelerator for Sparse Convolutional Neural Networks
(2019-05-01)
Lai, Bo-Cheng
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Pan, Jyun-Wei
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Lin, Chien-Yu
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Although the existing single-instruction-multiple-data-like (SIMD) accelerators can handle the compressed format of sparse convolutional neural networks, the sparse and irregular distributions of nonzero elements cause low utilization of multipliers in a processing engine (PE) and imbalanced computation between PEs. This brief addresses the above issues by proposing a data screening and task mapping (DSTM) accelerator which integrates a series of techniques, including software refinement and hardware modules. An efficient indexing module is introduced to identify the effectual computation pairs and skip unnecessary computation in a fine-grained manner. The intra-PE load imbalance is alleviated with weight data rearrangement. An effective task sharing mechanism further balances the computation between PEs. When compared with the state-of-the-art SIMD-like accelerator, the proposed DSTM enhances the average PE utilization by 3.5x. The overall processing throughput is 59.7% higher than the previous design.
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
(2017-06-01)
Lu, Ying-Hsin
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Chang, Ting-Chang
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Liao, Jih-Chien
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Chen, Li-Hui
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Lin, Yu-Shan
This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer.
Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs
(2016-12-01)
Lin, Chien-Yu
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Chang, Ting-Chang
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Liu, Kuan-Ju
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Tsai, Jyun-Yu
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Chen, Ching-En
This research studies the effects of post-metal deposition annealing temperature on degradation induced by positive bias stress (PBS) in TiN/HfO2 n-channel fin field-effect transistors (FinFETs). The initial electrical characteristics possess higher threshold voltage, transconductance and on-state current in high-annealing temperature devices. In addition, PBS-induced degradation was found to be more severe in high-annealing temperature devices due to more high-k bulk traps. However, in these devices, oxygen vacancies are generated within HfO2 since oxygen is more likely to diffuse toward the interface layer (IL) and repair Si/SiO2 dangling bonds. Furthermore, using charge-pumping and C-V measurements, less interface trapping and a thicker IL were found in high-annealing temperature devices, verifying the proposed model. (C) 2016 Elsevier B.V. All rights reserved.
Increase the risk of intellectual disability in children with scabies: A nationwide population-based cohort study
(2017-06-01)
Liu, Jui-Ming
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Hsu, Ren-Jun
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Chang, Fung-Wei
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Yeh, Chia-Lun
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Huang, Chun-Fa
Scabies is a common and distressing disease caused by the mite Sarcoptes scabiei var. hominis. Psychiatric disorder in childhood is an important disease and easily neglected. There are several similarities in scabies and psychiatric disorders in childhood (PDC). Both of them may present with pruritus. They are relatively common in patients with lower socioeconomic status and crowded environment. Furthermore, immune-mediated inflammatory processes play a role in the pathophysiology in both diseases. An association between scabies and psychiatric disorders may exist. This nationwide population-based cohort study utilized data from the National Health Insurance Research Database to investigate the relationship between scabies and PDC. A total of 2137 children with scabies were identified as the study group and 8548 age- and sex-matched children were selected as the control group. A total of 607 (5.68%) children developed PDC during the 7-year follow-up period. The overall incidences of PDC are similar but patients with scabies had a higher risk of developing intellectual disability (ID) (scabies group vs control group: 1.3% vs 0.6%, adjusted hazard ratio: 2.04 and 95% confidence interval: 1.25-3.32). The immune-mediated inflammatory processes of both diseases were reviewed and may contribute to the 104% increased risk of interleukin in patients with scabies. We suggest a more comprehensive management in treating patients with scabies or ID. Early and comprehensive treatment of scabies and other risk factors may decrease the risk of subsequent ID. When we approach patients with ID, concurrent evaluation of scabies and other risk factors may contribute to successful management.
Mysterious scrotal ecchymosis: Clues of child abuse
(2020-06-01)
Lin, Chao-Hsu
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Tsai, Hsing-Fen
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Chang, Ching-Ling
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Peng, Chun-Chih
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Chiu, Nan-Chang
Proteogenomics of Non-smoking Lung Cancer in East Asia Delineates Molecular Signatures of Pathogenesis and Progression
(2020-07-09)
Chen, Yi-Ju
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Roumeliotis, Theodoros, I
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Chang, Ya-Hsuan
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Chen, Ching-Tai
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Han, Chia-Li
Lung cancer in East Asia is characterized by a high percentage of never-smokers, early onset and predominant EGFR mutations. To illuminate the molecular phenotype of this demographically distinct disease, we performed a deep comprehensive proteogenomic study on a prospectively collected cohort in Taiwan, representing early stage, predominantly female, non-smoking lung adenocarcinoma. Integrated genomic, proteomic, and phosphoproteomic analysis delineated the demographically distinct molecular attributes and hallmarks of tumor progression. Mutational signature analysis revealed age- and gender-related mutagenesis mechanisms, characterized by high prevalence of APOBEC mutational signature in younger females and over-representation of environmental carcinogen-like mutational signatures in older females. A proteomics-informed classification distinguished the clinical characteristics of early stage patients with EGFR mutations. Furthermore, integrated protein network analysis revealed the cellular remodeling underpinning clinical trajectories and nominated candidate biomarkers for patient stratification and therapeutic intervention. This multi-omic molecular architecture may help develop strategies for management of early stage never-smoker lung adenocarcinoma.
Stabilizing a 10 GHz 0.8 ps asynchronously mode-locked Er-fiber soliton laser by deviation-frequency locking
(2006)
Hsiang, Wei-Wei
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Lin, Chien-Yu
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Sooi, Ng Kam
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Lai, Yinchieh
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光電工程學系
Without using high speed RF feedback electronics, long-term stabilization of a 10 GHz 0.8 ps mode-locked Er-fiber soliton laser with asynchronous phase modulation is demonstrated by controlling the cavity length to lock the deviation frequency at 25 kHz. (C) 2005 Optical Society of America.
Supporting Compressed-Sparse Activations and Weights on SIMD-like Accelerator for Sparse Convolutional Neural Networks
(2018-01-01)
Lin, Chien-Yu
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Lai, Bo-Cheng
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Sparsity is widely observed in convolutional neural networks by zeroing a large portion of both activations and weights without impairing the result. By keeping the data in a compressed-sparse format, the energy consumption could be considerably cut down due to less memory traffic. However, the wide SIMD-like MAC engine adopted in many CNN accelerators can not support the compressed input due to the data misalignment. In this work, a novel Dual Indexing Module (DIM) is proposed to efficiently handle the alignment issue where activations and weights are both kept in compressed-sparse format. The DIM is implemented in a representative SIMD-like CNN accelerator, and able to exploit both compressed-sparse activations and weights. The synthesis results with 40nm technology have shown that DIM can enhance up to 46% of energy consumption and 55.4% Energy-Delay-Product (EDP).
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
(2016-04-25)
Liu, Hsi-Wen
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Chang, Ting-Chang
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Tsai, Jyun-Yu
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Chen, Ching-En
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Liu, Kuan-Ju
This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects. Published by AIP Publishing.