Browsing by Author "Lin, Chien-chung"

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An Investigation on 25Gb/s Ultra-Short Cavity Quantum Well Lasers Operated at Elevated Temperatures
(2019-01-01)
Tsai, Yi-Lin
;
Chen, Bo-Hong
;
Hsu, Shun-Chieh
;
Shih, Hsiang-Yun
;
Lu, Po-Yen
A Fabry-Perot quantum well laser with ultra-short cavity is designed and fabricated. The emission wavelength is at 1310nm band which is important for data center applications. The shortest cavity length is 25 mu m, and the laser has mW-class output with low threshold currents (4mA in average). At room temperature, an opened eye diagram with 28Gb/s transmission rate can be observed. Clear 25Gb/s eye patterns from 15 degrees C to 65 degrees C are also demonstrated.
Detailed balance model for intermediate band solar cells with photon conservation
(2011-08-29)
Lin, Chien-chung
;
Liu, Wei-Ling
;
Shih, Ching-Yu
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光電系統研究所
;
Institute of Photonic System
We developed a comprehensive detailed balance model of intermediate band solar cell (IBSC). The key feature of our model is based on the conservation of photons in solar spectrum. Together with parametric analysis of carrier partition, we calculated the power conversion efficiency and found an enhancement of 1.5 times in wide band gap material IBSC (such as GaN). On the other hand, this model can also explain the inferior performance of GaAs-based IBSC through the degradation of open-circuit voltages, which can be attributed to the strong non-radiative recombination and the increased photo-generated carriers. The resulting maximum efficiency is complied with the classical Shockley-Queisser limit, and should be considered for the future IBSC design. (C) 2011 Optical Society of America
High performance ultraviolet micro-LED arrays for fine-pitch micro displays
(2019-01-01)
Tsai, Yi-Lin
;
Huang, Yu-Ming
;
Yang, Shu-Mei
;
Kuo, Wei-Hung
;
Fang, Yen-Hsiang
Highly efficient ultraviolet micro LED arrays are demonstrated. Small devices (5 microns in size) suitable for high resolution (725 ppi) can be produced with low leakage current and good emission spectra stability. A 10 by 10 array is achieved with passive-matrix driving connection.
High Speed Directly Modulated Fabry-Perot Lasers With an Ultra-Short Cavity Length
(2020-05-01)
Tsai, Yi-Lin
;
Wang, Shou-Wei
;
Huang, Huang-Hsiung
;
Shih, Hsiang-Yun
;
Lu, Po-Yen
In this study, Fabry-Perot quantum well lasers with shortened cavity designs (25 and 50 mu m) were fabricated. The devices had dry-etched and cleaved facets and exhibited an output power of up to 2.36 mW for a cavity length of 25 mu m; good spectral performance was achieved. Single-optical-mode operation with better than 25dB of side mode suppression ratio can be achieved for the fabricated devices with 25- and 50-mu m cavities. The short-cavity devices also exhibited highspeed modulation at elevated temperatures. Moreover, 25 Gb/s eye diagrams could be obtained at 65oC for the 25 mu m device and 55oC for the 50 mu m device. Due to their small area, ultra-shortcavity Fabry-Perot laser can be suitably used in next-generation light sources for optical communication.
Highly Efficient GaAs Solar Cells with Dual Layer of Quantum Dots And A Flexible PDMS Film
(2012)
Lin, Chien-chung
;
Chen, H. C.
;
Chen, K. J.
;
Han, H. V.
;
Kuo, H. C.
High performance of GaAs solar cell with dual layer quantum dots separated by flexible polydimethylsiloxane film was demonstrated. By this scheme, the efficiency increased by 22 %, compared to the cell without QDs. (C) 2012 Optical Society of America
Numerical Analysis of Nano-scale Solar Cells with Surface States
(2015)
Lin, Chien-chung
;
Lin, Shih-Li
;
Tseng, Hung-Ruei
;
Hsu, Shun-Chieh
;
Chen, Yin-Han
As the scale of the solar cell moves into nanometer regime, the numerical analysis should evolve at the same pace. By using the Matlab (R) as the tool and solving the general Poisson and continuity equations, we are able to have a good platform for the nano-scale solar cells. By adapting proper parameters, the perovskite solar cells and their behavior under different surface recombination conditions were analyzed.
Photovoltaic response for high density InGaAs coupled quantum dots
(2012)
Chuang, K. Y.
;
Tzeng, K. D.
;
Tzeng, T. E.
;
Lay, T. S.
;
Lin, Chien-chung
In order to enhance absorption at infrared range for GaAs based solar cell, we insert the nine-layer of vertically coupled quantum dots (VCQDs) into the active layer. We fine modulated the GaAs spacer thickness of coupled In0.75Ga0.25As QDs, and investigated the effects on photovoltaic response. For the open-circuit voltage (V-oc), the values decreases from 0.61 V to 0.55 V as the spacer thickness (d) decreases from d=15 nm to 5 nm for the nine-layer VCQDs solar cells. The reduction of V-oc for the VCQDs solar cells is attributed to the accumulation of compressive strain energy in the active QD region. For the sample of d=10 nm shows the best performance of current density (J(sc)similar to 24 mA/cm(2)) and efficiency (eta similar to 10.6). The J(sc) and eta, are increases by 55% and 112% more than the device without QDs, respectively.
Self-assembled InN growth on GaN nanorod
(2014)
Chang, Shih-Pang
;
Lai, Yung-Yu
;
Cheng, Yuh-Jen
;
Han, Jung
;
Kuo, Hao-Chung
We report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.
Type II GaSb quantum ring solar cells under concentrated sunlight
(2014-03-10)
Tsai, Che-Pin
;
Hsu, Shun-Chieh
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Lin, Shih-Yen
;
Chang, Ching-Wen
;
Tu, Li-Wei
A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one. (C)2014 Optical Society of America
從證券法觀點觀察強制公開揭露理論的界線與替代模型
(2013)
林建中
;
Lin, Chien-chung
;
科技法律研究所
;
Institute of Technology Law