Browsing by Author "Lin, Chih-Chien"

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Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal Ytterbium (Yb) and Al2O3 Interfacial Layer
(2019-01-01)
Wu, Tian-Li
;
Tseng, Yang-Yan
;
Huang, Chih-Fang
;
Chen, Zih-Sin
;
Lin, Chih-Chien
In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al2O3 interfacial layer (IL) (1 similar to 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with Onm Al2O3 layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al2O3 IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with lnm Al2O3 IL is 10(3) times higher the one without an Al2O3 IL. This proves that inserting an Al2O3 IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1x10(-4) Omega.cm(2) is demonstrated in the MIS contact with lnm Al2O3 IL.
Skillfully Diminishing Antenna Effect in Layer Assignment Stage
(2014-01-01)
Lin, Chih-Chien
;
Liu, Wen-Hao
;
Li, Yih-Lang
;
交大名義發表
;
National Chiao Tung University
Antenna effect is an important issue that critically impacts the reliability and yield of integrated circuits. The dynamic-programming-based (DP-based) layer assignment method has been adopted to minimize antenna violation by enumerating all possible solutions and pruning inferior solutions. However, the complexities of modern circuits have significantly increased, likely causing the DP-based method to consume much more runtime and memory space. In this paper, we propose a skillful method to effectively Diminish Antenna effect in Layer Assignment Stage (DALAS). Unlike previous work that needs to search for separator locations and thus requires exploring much more solution space, DALAS does not need to search for separator locations and can deal with local and global antenna effects while trying to keep total via count and total overflow minimal. Experiment results show that DALAS is the first work to expel all antenna violations with similar via count to that produced by previous works [3][5] for the benchmarks in ISPD\'08 Global Routing Contest.
The development of low-temperature atomic layer deposition of HfO2 for TEM sample preparation on soft photo-resist substrate
(2018-01-01)
Peng, Kang-Ping
;
Liu, Ya-Chi
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Lin, I-Feng
;
Lin, Chih-Chien
;
Huang, Shu-Wei
In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40 degrees C to 85 degrees C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.
WAFER SIZE MOS2 WITH FEW MONOLAYER SYNTHESIZED BY H2S SULFURIZATION
(2017-01-01)
Ho, Yen-Teng
;
Chu, Yung-Ching
;
Wei, Lin-Lung
;
Luong, Tien-Tung
;
Lin, Chih-Chien
Wafer sized, high quality continuous fihns would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer Mo-S2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence (PL), shows the semiconductor nature with direct transition peaks of 1.86 eV and 1.99 eV. The 4 5 monolayer of MoS2 with thickness around 2.6 nm is confirmed by cross-sectional view of transmission electron microscopy (TEM). Additionally, the DC characteristics of MoS2 MOSFETs exhibit at least 2 order in on/off current ratio, demonstrating the feasibility for circuit application.
Zr-MOF/Polyaniline Composite Films with Exceptional Seebeck Coefficient for Thermoelectric Material Applications
(2019-01-23)
Lin, Chih-Chien
;
Huang, Yi-Chia
;
Usman, Muhammad
;
Chao, Wen-Hsuan
;
Lin, Wei-Keng
Controlling the polymerization of aniline in the presence of zirconium-based metal-organic frameworks (Zr-MOFs) using polystyrene sulfonic acid as a dopant resulted in the formation of a new type of freestanding thermoelectric composite film. Polyaniline chains interpenetrate into the Zr-MOFs to enhance the crystallinity of polyaniline, resulting in an improved degree of electrical conductivity. In addition, the inherent porosity of the Zr-MOFs functions to suppress the increase in thermal conductivity, thus dramatically promoting a negative Seebeck coefficient. When 20 wt % Zr-MOF was used, a power factor of up to 664 mu W/(m K-2) was obtained, which was accompanied by a surprisingly large, negative Seebeck coefficient. The new class of MOF-based composites offers a new direction for developing new types of efficient thermoelectric materials.