Browsing by Author "Lin, Chih-Hao"

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A high quality liquid-type quantum dot white light-emitting diode (vol 8, pg 1117, 2016)
(2018-04-07)
Sher, Chin-Wei
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Lin, Chih-Hao
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Lin, Huang-Yu
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Lin, Chien-Chung
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Huang, Che-Hsuan
A Novel Liquid Packaging Structure of Deep-Ultraviolet Light-Emitting Diodes to Enhance the Light-Extraction Efficiency
(2019-04-01)
Kang, Chieh-Yu
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Lin, Chih-Hao
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Wu, Tingzhu
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Lee, Po-Tsung
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Chen, Zhong
To realize high-efficiency, AlGaN-based, deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency and reducing thermal resistance is very crucial. We proposed a liquid packaging structure that could enhance optical power by 27.2% and 70.7% for flat type and lens type 281-nm DUV-LEDs, respectively. A significant improvement effect at different wavelengths, such as 268 nm and 310 nm, was also observed. Furthermore, using the liquid packaging structure, the thermal resistance was reduced by 30.3% compared to the conventional structure. Finally, the reliability of liquid packaging DUV-LEDs was tested. The light output maintenance of liquid packaging DUV-LEDs was compared to the conventional structure.
Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall
(2018-11-01)
Pai, Yung-Min
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Lin, Chih-Hao
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Lee, Chun-Fu
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Lin, Chun-Peng
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Chen, Cheng-Huan
To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.
Fabrication of Flexible White Light-Emitting Diodes from Photoluminescent Polymer Materials with Excellent Color Quality
(2017-10-11)
Lin, Huang-Yu
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Sher, Chin-Wei
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Lin, Chih-Hao
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Tu, Hsien-Hao
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Chen, Xin Yin
This study developed flexible light-emitting diodes (LEDs) with warm white and neutral white light. A simple ultraviolet flip-chip sticking process was adopted for the pumping source and combined with polymer and quantum dot (QD) films technology to yield white light. The polymer-blended flexible LEDs exhibited higher luminous efficiency than the QD-blended flexible LEDs. Moreover, the polymer-blended LEDs, achieved excellent color-rendering index (CRI) values (Ra = 96 and R9 = 96), with high reliability, demonstrating high suitability for special applications like accent, down, or retrofit lights in the future. In places such as a museum, kitchen, or surgery room, its high R9 and high CRI characteristics can provide high-quality services.
Fabrication of highly efficient hybrid device structure based white light emitting diodes
(2020-07-10)
Verma, Akta
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Sharma, S. K.
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Lin, Chih-Hao
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Manikandan, Arumugam
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Kuo, Hao-Chung
In this study, white light is generated from the combination of BaMgAl10O17:Mn2+ (BAM) green phosphor and colloidal red CdSe/ZnS quantum dots (QDs) via two different solid and hybrid type geometries. Problem of aggregation in solid type device is discussed in details and motivates us to move towards the fabrication of hybrid type device structure. The photoluminescence (PL) characterization was used to record the excitation and emission spectra of BAM and QDs materials. The size of CdSe/ZnS QDs was confirmed by transmission electron microscopy technique. The CdSe/ZnS QDs owned high quantum yield (>50%) and contributed to fabrication of high luminous efficiency of white light emitting diodes (WLEDs). The hybrid-type WLED showed 98% lm/W with outstanding color gamut values with a National Television System Committee (NTSC) value of 138% and Rec.2020 value of 105%. Moreover, the hybrid type device structure shows only 5% attenuation in luminous efficiency after 500 h of storage which maintains a great optical property.
Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer
(2019-04-01)
Chen, Sung-Wen Huang
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Shen, Chih-Chiang
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Wu, Tingzhu
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Liao, Zhen-You
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Chen, Lee-Feng
Full-color displays based on micro light-emitting diodes (mu LEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-mu LEDs was tuned from green to blue through strain relaxation. An Al2O3 layer was deposited on the sidewall of NR-mu LEDs, which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-mu LEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light. (C) 2019 Chinese Laser Press
Highly Efficient and Stable White Light-Emitting Diodes Using Perovskite Quantum Dot Paper
(1970-01-01)
Kong, Chieh-Yu
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Lin, Chun-Ho
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Lin, Chih-Hao
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Li, Ting-You
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Chen, Sung-Wen Huang
Perovskite quantum dots (PQDs) are a competitive candidate for next-generation display technologies as a result of their superior photoluminescence, narrow emission, high quantum yield, and color tunability. However, due to poor thermal resistance and instability under high energy radiation, most PQD-based white light-emitting diodes (LEDs) show only modest luminous efficiency of approximate to 50 lm W-1 and a short lifetime of <100 h. In this study, by incorporating cellulose nanocrystals, a new type of QD film is fabricated: CH3NH3PbBr3 PQD paper that features 91% optical absorption, intense green light emission (518 nm), and excellent stability attributed to the complexation effect between the nanocellulose and PQDs. The PQD paper is combined with red K2SiF6:Mn4(+) phosphor and blue GaN LED chips to fabricate a high-performance white LED demonstrating ultrahigh luminous efficiency (124 lm W-1), wide color gamut (123% of National Television System Committee), and long operation lifetime (240 h), which paves the way for advanced lighting technology.
Hybrid-type white LEDs based on inorganic halide perovskite QDs: candidates for wide color gamut display backlights
(2019-05-01)
Lin, Chih-Hao
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Verma, Akta
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Kang, Chieh-Yu
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Pai, Yung-Min
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Chen, Tzu-Yu
We demonstrate inorganic halide perovskite quantum-dots-based white light-emitting diodes via three different geometries, including liquid, solid, and hybrid types. Problems of fast anion exchange and aggregation in the cases of liquid- and solid-type devices are discussed in detail and push us to move towards the fabrication of a hybrid-type device structure. The experiment results illustrate that a hybrid-type device has the highest luminance efficiency (51 lm/W) and a wide color gamut (122% of NTSC and 91% of Rec. 2020). Therefore, we conclude that a hybrid-type device can provide an outstanding color gamut for high color gamut display applications. (c) 2019 Chinese Laser Press
Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes - Analysis on the parasitic peaks over wide ranges of temperature and injection density
(2019-08-05)
Wu, Tingzhu
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Lin, Yue
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Peng, Zhangbao
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Chen, Huashan
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Shangguan, Zhibin
The low luminance efficiency, poor reliability and parasitic peaks have greatly limited the commercialization of deep ultraviolet (DUV) light-emitting diodes. Tasks of identifying the culprits of these deficits are of paramount importance but remains unaccomplished. We employ the full-range temperature (20 K - 300 K) measurement on 275-nm DUV devices that subjected to a 15-hour current-stress aging. The results suggest that the primary culprit of fast luminous decay is the proliferation of non-radiative centers. The origins of two main parasitic peaks are identified. The 310-nm peak is considered to solely come from deep-level radiative centers (DLRCs) that only dwell in the active region. Whereas, the 400-nm peak is proven to be dual-sources. One is related to the DLRCs in the active region, which only can be observed at very low currents; the other emerging at higher currents are associated with similar kinds of DLRCs located in the p-region, which only are excited when electrons overflow. This new discovery also demonstrates that a thorough investigation on the interplay among carriers and various types of defects should be conducted on the basis of the measurement that is taken under a wide temperature range, as well as under a proper forward voltage. This is to let the quasi-Fermi level shift across deep defect levels, the band-edge, and to over-band, whereby these recombination sites are exposed to deficit, moderate and saturated electron environment so that their natures can be well tested. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Liquid Type Nontoxic Photoluminescent Nanomaterials for High Color Quality White-Light-Emitting Diode
(2018-12-22)
Lin, Chih-Hao
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Pai, Yung-Min
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Lee, Chun-Fu
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Verma, Akta
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Lin, Huang-Yu
High-brightness white-light-emitting diodes (w-LEDs) with excellent color quality is demonstrated by using nontoxic nanomaterials. Previously, we have reported the high color quality w-LEDs with heavy-metal phosphor and quantum dots (QDs), which may cause environmental hazards. In the present work, liquid-type white LEDs composed of nontoxic materials, named as graphene and porous silicon quantum dots are fabricated with a high color rendering index (CRI) value gain up to 95. The liquid-typed device structure possesses minimized surface temperature and 25% higher value of luminous efficiency as compare to dispensing-typed structure. Further, the as-prepared device is environment friendly and attributed to low toxicity. The low toxicity and high R9 (87) component values were conjectured to produce new or improve current methods toward bioimaging application.
Nanoparticle-Doped Polydimethylsiloxane Fluid Enhances the Optical Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
(2019-07-15)
Ye, Zhi Ting
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Pai, Yung-Min
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Lin, Chih-Hao
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Chen, Lung-Chien
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Hong Thai Nguyen
This paper proposes a new encapsulation structure for aluminum nitride-based deep UV light-emitting diodes (DUV-LEDs) and eutectic flip chips containing polydimethylsiloxane (PDMS) fluid doped with SiO2 nanoparticles (NPs) with a UV-transparent quartz hemispherical glass cover. Experimental results reveal that the proposed encapsulation structure has considerably higher light output power than the traditional one. The light extraction efficiency was increased by 66.49% when the forward current of the DUV-LED was 200mA. Doping the PDMS fluid with SiO2 NPs resulted in higher light output power than that of undoped fluid. The maximum efficiency was achieved at a doping concentration of 0.2wt%. The optical output power at 200mA forward current of the encapsulation structure with NP doping of the fluid was 15% higher than that without NP doping. The optical output power of the proposed encapsulation structure was 81.49% higher than that of the traditional encapsulation structure. The enhanced light output power was due to light scattering caused by the SiO2 NPs and the increased average refractive index. The encapsulation temperature can be reduced by 4 degrees C at a driving current of 200mA by using the proposed encapsulation structure.
Novel Method for Estimating Phosphor Conversion Efficiency of Light-Emitting Diodes
(2018-12-01)
Lin, Chih-Hao
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Huang, Che-Hsuan
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Pai, Yung-Min
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Lee, Chung-Fu
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Lin, Chien-Chung
This study presents a novel method for estimating the phosphor conversion efficiency of white light-emitting diodes (WLEDs) with different ratios of phosphors. Numerous attempts have been made for predicting the phosphor conversion efficiency of WLEDs using Monte Carlo ray tracing and the Mie scattering theory. However, because efficiency depends on the phosphor concentration, obtaining a tight match between this model and the experimental results remains a major challenge. An accurate prediction depends on various parameters, including particle size, morphology, and packaging process criteria. Therefore, we developed an efficient model that can successfully correlate the total absorption ratio to the phosphor concentration using a simple equation for estimating the spectra and lumen output. The novel and efficient method proposed here can accelerate WLED development by reducing costs and saving fabrication time.
Novel Siloxane-Modified Epoxy Resins as Promising Encapsulant for LEDs
(2020-01-01)
Lin, Chih-Hao
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Whang, Wha-Tzong
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Chen, Chun-Hua
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Huang, Shu-Chen
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Chen, Kai-Chi
This study investigated a new category of transparent encapsulant materials for light-emitting diodes (LEDs). It comprised a phenyl group that contained siloxane-modified epoxy (SEP-Ph) hybridized with a cyclic tetrafunctional siloxane-modified epoxy (SEP-D4) with methylhexahydrophthalic anhydride (MHHPA) as a curing agent. The SEP-Ph/SEP-D4 = 0.5/0.5 (sample 3) and SEP-D4 (sample 4) could provide notably high optical transmittance (over 90% in the visible region), high-temperature discoloration resistance, low stress, and more crucially, noteworthy sulfurization resistance. The lumen flux retention of the SEP encapsulated surface mounted device LEDs remained between approximately 97% and 99% after a sulfurization test for 240 h. The obtained comprehensive optical, mechanical, and sulfurization resistance proved the validity and uniqueness of the present design concept with complementary physical and chemical characteristics.
Square Column Structure of High Efficiency, Reliable, Uniformly Flexible LED Devices
(2018-12-01)
Lin, Chih-Hao
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Pai, Yung-Min
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Kang, Chieh-Yu
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Lin, Huang-Yu
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Lee, Chun-Fu
This study demonstrates that flexible white LEDs, doped with diffusion particles and with a square column structure, have excellent luminosity, uniformity, and bending reliability. This large area (5 cm x 5 cm) square column flexible device had a smaller thickness (2 mm), and enhancements in both luminous efficiency (29.5%) and uniformity (44.6%) compared to the characteristics of the 6 mm reference sample. Optimization of the reflective layer coating for the square column, flexible white LED was achieved with a higher luminous efficiency (171 lm/w) and uniformity (92%). We designed a novel lightning bolt electrode to improve reliability and bendability. After the bending test, the blue flexible LED had a lower bending diameter (10 mm) but more bending circles (increased to 2000 times.
The Impact of Luminous Properties of Red, Green, and Blue Mini-LEDs on the Color Gamut
(2019-05-01)
Guo, Weijie
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Chen, Nan
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Lu, Hao
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Su, Changwen
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Lin, Yue
Color gamut is of the paramount importance in the display. Light-current-voltage(L-I-V) characteristics of red, green, and blue flip-chip mini-light-emitting diodes (LEDs) (100 mu m x 200 mu m) are investigated at temperatures similar to the operational temperatures. Both the ideality factor and the temperature dependence of external quantum efficiency (EQE) suggest that the nonradiative loss in red mini-LED is higher. We also illustrate the intensive lateral luminous intensity fluctuation for red mini-LED under the over-driving current by capturing the spatial emission mapping. The influence of temperature and driving current on the chromaticity coordinates of mini-LEDs is determined. Furthermore, we propose a drive-current algorithm to maximize the color gamut of the trichromatic mixed light at different temperatures. The results indicate that, for the application of self-emitting mini-LED displays, the maximum color gamut is more sensitive to green emission, whereas enhancing the radiative recombination in red mini-LED could contribute a lot to the improvement on net performance.
Ultra-High Light Extraction Efficiency and Ultra-Thin Mini-LED Solution by Freeform Surface Chip Scale Package Array
(2019-04-01)
Huang, Che-Hsuan
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Kang, Chieh-Yu
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Chang, Shu-Hsiu
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Lin, Chih-Hao
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Lin, Chun-Yu
In this study, we present a novel type of package, freeform-designed chip scale package (FDCSP), which has ultra-high light extraction efficiency and bat-wing light field. For the backlight application, mainstream solutions are chip-scale package (CSP) and surface-mount device package (SMD). Comparing with these two mainstream types of package, the light extraction efficiency of CSP, SMD, and FDCSP are 88%, 60%, and 96%, respectively. In addition to ultra-high light extraction efficiency, because of the 160-degree bat-wing light field, FDCSP could provide a thinner and low power consumption mini-LED solution with a smaller number of LEDs than CSP and SMD light source array.
Ultrawide Color Gamut Perovskite and CdSe/ZnS Quantum-Dots-Based White Light-Emitting Diode with High Luminous Efficiency
(2019-09-01)
Lin, Chih-Hao
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Kang, Chieh-Yu
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Verma, Akta
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Wu, Tingzhu
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Pai, Yung-Min
We demonstrate excellent color quality of liquid-type white light-emitting diodes (WLEDs) using a combination of green light-emitting CsPbBr3 and red light-emitting CdSe/ZnS quantum dots (QDs). Previously, we reported red (CsPbBr1.2I1.8) and green (CsPbBr3) perovskite QDs (PQDs)-based WLEDs with high color gamut, which manifested fast anion exchange and stability issues. Herein, the replacement of red PQDs with CdSe/ZnS QDs has resolved the aforementioned problems effectively and improved both stability and efficiency. Further, the proposed liquid-type device possesses outstanding color gamut performance (132% of National Television System Committee and 99% of Rec. 2020). It also shows a high efficiency of 66 lm/W and an excellent long-term operation stability for over 1000 h.