Browsing by Author "Lin, Chih-Hung"

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A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness
(2007)
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Peng, Wu-Chin
;
Yang, Wen-Luh
;
Wang, Jer-Chyi
High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride-silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V-th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.
Cross-lagged relationships between problematic Internet use and lifestyle changes
(2013-11-01)
Lin, Chih-Hung
;
Chen, Ssu-Kuang
;
Chang, Shan-Mei
;
Lin, Sunny S. J.
;
教育研究所
Cross-lagged analysis of panel survey data collected from Taiwanese college students (initially 387 males and 370 females) was used to examine the temporal relationship between problematic Internet use (PIU) and lifestyle changes during the first year in college. We hypothesized that a reciprocal relationship might exist between PIU and lifestyle changes. Structural equation modeling was adopted to test several nested cross-lagged relationship models. The results showed that four measures of lifestyle changes and PIU were moderately to highly stable across one year. Moreover, PIU in freshman year predicted negative changes in lifestyle in the following year, including a reduction of physical and social activities, irregular diet and unhealthy sleep. Lifestyle changes in freshman year, in contrast, did not predict PIU in sopho-more year; the hypothesized reciprocal relationship between PIU and lifestyle changes was not warranted. Implications and limitations are discussed. (C) 2013 Elsevier Ltd. All rights reserved.
Cross-lagged relationships between problematic Internet use and lifestyle changes
(2013-11-01)
Lin, Chih-Hung
;
Chen, Ssu-Kuang
;
Chang, Shan-Mei
;
Lin, Sunny S. J.
;
教育研究所
Cross-lagged analysis of panel survey data collected from Taiwanese college students (initially 387 males and 370 females) was used to examine the temporal relationship between problematic Internet use (PIU) and lifestyle changes during the first year in college. We hypothesized that a reciprocal relationship might exist between PIU and lifestyle changes. Structural equation modeling was adopted to test several nested cross-lagged relationship models. The results showed that four measures of lifestyle changes and PIU were moderately to highly stable across one year. Moreover, PIU in freshman year predicted negative changes in lifestyle in the following year, including a reduction of physical and social activities, irregular diet and unhealthy sleep. Lifestyle changes in freshman year, in contrast, did not predict PIU in sopho-more year; the hypothesized reciprocal relationship between PIU and lifestyle changes was not warranted. Implications and limitations are discussed. (C) 2013 Elsevier Ltd. All rights reserved.
High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash Memory
(2010-09-01)
Wang, Kuan-Ti
;
Chao, Tien-Sheng
;
Wu, Woei-Cherng
;
Yang, Wen-Luh
;
Lee, Chien-Hsing
For the first time, a high-performance (tau(PGM) = 200 ns/tau(ERS) = 5 ms) cell with superior reliability characteristics is demonstrated in a NOR-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight V(TH) distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.
High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming Method
(2009-06-01)
Wang, Kuan-Ti
;
Chao, Tien-Sheng
;
Wu, Woei-Cherng
;
Chiang, Tsung-Yu
;
Wu, Yi-Hong
A. high programming speed with a low-power-consumption wrapped-select-gate poly-Si-oxide-nitride-oxide-silicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (I(PGM)) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.
MicroApp: Architecting Web Application for Non-Uniform Trustworthiness in Cloud Computing Environment
(2014-01-01)
Hsu, Yen-Chun
;
Wu, Yu-Sung
;
Tsai, Tsung-Han
;
Chiu, Yi-Pin
;
Lin, Chih-Hung
An increasing number of web applications are now hosted in cloud infrastructures such as Amazon Web Services. Cloud infrastructures generally lack a uniform guarantee on security, reliability, performance, and cost. A privately owned cloud infrastructure may be considered more secure but less performant than a third-party public cloud infrastructure. Infrastructures that span across geographical regions may further incur complications on the trustworthiness of infrastructures due to the varying power of jurisdiction. Application developers have to be aware of the non-uniformity of infrastructure trustworthiness when deploying applications in the cloud. We propose the MicroApp architecture that help address the difficulty in dealing with the non-uniformity. MicroApp splits a web application into multiple micro applications. Each micro application encapsulates a port of the code and data with the same level of security and integrity requirement. The micro applications will then be deployed to corresponding infrastructures that satisfy the respective requirements. MicroApp provides an RPC mechanism to allow control flows across micro applications. The architecture can be transparently applied to existing web applications and allows an application to effectively adapt to the cloud environment.
Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for NOR-Type Flash Memory
(2009-11-01)
Wang, Kuan-Ti
;
Chao, Tien-Sheng
;
Chiang, Tsung-Yu
;
Wu, Woei-Cherng
;
Kuo, Po-Yi
For the first time, a programming mechanism for conventional source-side injection (SSI) (normal mode), substrate-bias enhanced SSI (body mode), and dynamic-threshold SSI (DTSSI) (DT mode) of a wrapped-select-gate SONOS memory is developed with 2-D Poisson equation and hot-electron simulation and programming characteristic measurement for NOR Flash memory. Compared with traditional SSI, DTSSI mechanisms are determined in terms of lateral acceleration electric field and programming current (I(PGM)) in the neutral gap region, resulting in high programming efficiency. Furthermore, the lateral electric field intersects the vertical electric field, indicating that the main charge injection point is from the end edge of the gap region close to the word gate.
Simulation for optimization of mask error enhancement factor by design of experiments in both dry and immersion ArF lithography
(2006-08-01)
Yeh, Kwei-Tin
;
Lin, Chih-Hung
;
Hu, Ji-Ren
;
Loong, Wen-An
;
應用化學系
Simulations for the optimization of the mask error enhancement factor (MEEF) by using Taguchi's design of experiment (DOE) method in both dry and immersion ArF lithography have been demonstrated here. By DOE, MEEF has been successfully reduced, and the process window hash also been enlarged. Furthermore, in immersion lithography, MEEF has been significantly reduced, and resolution is also enhanced. In this study, we determined the optimal process and optical parameters to enlarge the process window and reduce MEEFs for different types of mask by DOE.
Synthesis and mesomorphic properties of -methylstilbene-based liquid crystals
(2009)
Chang, Chin-Yen
;
Ho, Kang-Wei
;
Hsu, Chain-Shu
;
Lin, Chih-Hung
;
Gauza, Sebastian
Six series of -methylstilbene-based liquid crystals, i.e. 4-(4-alkylphenyl)-4'-amino--methylstilbenes (2a-e), 4-(4-alkylphenyl)-4'-cyano--methylstilbenes (3a-e), 4-(4-alkylphenyl)-4'-isothiocyanato--methylstilbenes (4a-e), 4'-(trans-4-alkylcyclohexyl)-4-fluoro--methylstilbenes (5a-e), 4'-(trans-4-alkylcyclohexyl)-4-amino--methylstilbenes (7a-e) and 4'-(trans-4-alkylcyclohexyl)-4-isothiocyanato--methylstilbenes (8a-e) were synthesised. All of these -methylstilbene-based compounds exhibit an enantiotropic nematic phase. Some of the 4-(4-alkylphenyl)-4'-isothiocyanato--methylstilbenes with longer alkyl chains exhibit a smectic A phase. All of the liquid crystals obtained exhibit a wide nematic range and high birefringence of 0.16-0.46. Both series of isothiocyanato-based, liquid crystal compounds 4a-e and 8a-e containing -methylstilbenes revealed much lower melting points and clearing temperatures than their cyano and amino homologues.
Synthesis of New Blue Anthracene-based Conjugated Polymers and Their Applications in Polymer Light-Emitting Diodes
(2011-06-01)
Shih, Hung-Min
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Lin, Cheng-Jui
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Tseng, Shin-Rong
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Lin, Chih-Hung
;
Hsu, Chain-Shu
A series of anthracene-based conjugated copolymers containing 9,10-bis(6-bromonaphthalen-2- yl)-2-tert-butylanthracene (BNA) and 2,7-diphenyl substituted fluorene (DPPF) moieties are prepared via a palladium-catalyzed Suzuki polymerization. All of the synthesized polymers emit blue light at around 450nm and show good thermal and color stability. Their electro-luminescence spectra remain unchanged at high driving voltage. The double-layer polymer light-emitting diode (PLED) fabricated with ITO/PEDOT: PSS/DPPFBNA3/CsF/Al, produces a maximum brightness of 1 650 cd.m(-2) and has a luminance efficiency of 0.39 cd.A(-1). The ITO/PEDOT: PSS/TFB/DPPFBNA3/CsF/Al multilayer PLED, incorporating a TFB layer to facilitate hole transportation, produces a maximum brightness of 5 371 cd.m(-2) and a luminance efficiency of 1.18 cd.A(-1)