Browsing by Author "Lin, Chin-An"

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Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
(2013-05-01)
Tsai, Dung-Sheng
;
Liu, Keng-Ku
;
Lien, Der-Hsien
;
Tsai, Meng-Lin
;
Kang, Chen-Fang
Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use In harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to similar to 10(10) cm Hz(1/2)/W), fast photoresponse (rise time of similar to 70 mu s and fall time of similar to 110 mu s), and high thermal stability (at a working temperature of up to 200 degrees C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (similar to 10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.