Browsing by Author "Lin, Ching-Lun"

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An experimental investigation of a mixed convection in a (sic) shape channel subject to a reciprocating motion
(2009-07-01)
Fu, Wu-Shung
;
Lian, Sin-Hong
;
Lin, Ching-Lun
;
Yang, Chung-Lin
;
機械工程學系
An experimental work is conducted to study heat transfer phenomena of a mixed convection in a (sic) shape channel which is subject to a reciprocating motion. Simultaneously, a numerical calculation is executed to validate the experimental results auxiliarily. Parameters of Reynolds number, frequency and amplitude are considered. The results show that enhancement of heat transfer rate caused by the reciprocating motion is remarkable. Due to the impingement of cooling fluids, the heat transfer rate of the front heat region is still superior to those of the middle and back heat regions. The phenomena of this object are very complicated, and the maximum deviation between the experimental and numerical results is not over 25%. (C) 2009 Elsevier Ltd. All rights reserved.
Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al(2)O(3) Gate Dielectric
(2009-08-01)
Cheng, Chao-Ching
;
Chien, Chao-Hsin
;
Luo, Guang-Li
;
Lin, Ching-Lun
;
Chen, Hung-Sen
In this paper, we investigated the characteristics of Ge junction diodes and gate-last p- and n-metal-oxide-semiconductor field-effect transistors with the atomic-layer-deposited-Al(2)O(3) gate dielectrics. The magnitudes of the rectifying ratios for the Ge p(+)-n and n(+)-p junctions exceeded three and four orders of magnitude (in the voltage range of +/-1 V), respectively, with accompanying reverse leakages of ca. 10(-2) and 10(-4) A . cm(-2), respectively. The site of the primary leakage path, at either the surface periphery or junction area, was determined by the following conditions: 1) the thermal budget during dopant activation, and 2) whether forming gas annealing (FGA) was employed or not. In addition, performing FGA at 300 degrees C boosted the device on-current, decreased the Al(2)O(3)/Ge interface states to 8 x 10(11) cm(-2) . eV(-1), and improved the reliability of bias temperature instability. The peak mobility and on/off ratio reached as high as 225 cm(2) . V(-1) . s(-1) and > 10(3), respectively, for the p-FET (W/L = 100 mu m/4 mu m), while these values were less than 100 cm(2) . V(-1) . s(-1) and ca. 10(3), respectively, for the n-FET (W/L = 100 mu m/9 mu m). The relatively inferior n-FET performance resulted from the larger source/drain contact resistance, higher surface states scattering, and lower substrate-doping concentration.
Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate Dielectric
(2009-08-01)
Cheng, Chao-Ching
;
Chien, Chao-Hsin
;
Luo, Guang-Li
;
Lin, Ching-Lun
;
Chen, Hung-Sen
In this paper, we investigated the characteristics of Ge junction diodes and gate-last p- and n-metal-oxide-semiconductor field-effect transistors with the atomic-layer-deposited-Al2O3 gate dielectrics. The magnitudes of the rectifying ratios for the Ge p(+)-n and n(+)-p junctions exceeded three and four orders of magnitude (in the voltage range of +/-1 V), respectively, with accompanying reverse leakages of ca. 10(-2) and 10(-4) A . cm(-2), respectively. The site of the primary leakage path, at either the surface periphery or junction area, was determined by the following conditions: 1) the thermal budget during dopant activation, and 2) whether forming gas annealing (FGA) was employed or not. In addition, performing FGA at 300 degrees C boosted the device on-current, decreased the Al2O3/Ge interface states to 8 x 10(11) cm(-2) . eV(-1), and improved the reliability of bias temperature instability. The peak mobility and on/off ratio reached as high as 225 cm(2) . V-1 . s(-1) and > 10(3), respectively, for the p-FET (W/L = 100 mu m/4 mu m), while these values were less than 100 cm(2) . V-1 . s(-1) and ca. 10(3), respectively, for the n-FET (W/L = 100 mu m/9 mu m). The relatively inferior n-FET performance resulted from the larger source/drain contact resistance, higher surface states scattering, and lower substrate-doping concentration.