Browsing by Author "Lin, Chun Fu"

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Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structure
(2018-04-15)
Lee, Ming Ling
;
Wang, Jer Chyi
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Kao, Chyuan Haur
;
Chen, Hsiang
;
Lin, Chan Yu
In this paper, we demonstrate electrolyte-insulator-semiconductor devices for biochemical sensing applications prepared from ZnO and Ti-doped ZnO sensing membranes deposited on Si substrates by radio frequency sputtering. The structural, morphological, and compositional features of these deposited films with multitemperature annealing were studied using X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy, respectively. Sensitivity, linearity, hysteresis, and drift rate were measured to determine the sensing and reliability performance of all fabricated devices. Compared to the ZnO electrolyte-insulator-semiconductor (EIS), the Ti-doped ZnO EIS sensor annealed at 700 degrees C exhibits a higher sensitivity of 57.56 mV/pH, lower hysteresis of 2.79 mV, and lower drift rate of 0.29 mV/h. For Ti-doped ZnO, sensitivities of 3.62 mV/mM and 6.42 mV/mM were obtained for urea and glucose sensing, respectively. The improvements are owing to Ti-doping, which produces a rougher sensing surface, a well-crystallized grain structure, and thinner silicate and SiO2 at the silicon-oxide interface.
Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layer
(2017-06-01)
Lee, Ming Ling
;
Chen, Hsiang
;
Kao, Chyuan Haur
;
Mahanty, Rama Krushna
;
Sung, Wei Kung
In this study, we proposed a metal-oxide high-k-oxide-silicon (MOHOS) memory device using a nickel oxide film as the charge trapping layer, and studied the effect of post-deposition rapid thermal annealing (RTA) on the physical and electrical properties. The physical properties were investigated via multiple material analysis techniques such as X-ray diffraction and atomic force microscopy. The optimal annealing temperature for depositing the charge trapping layer was determined through a thorough investigation of the memory window, program/erase (P/E) cycle, crystalline structure, and material composition. Compared to the as-deposited NiO2 film, a MOHOS-type memory device annealed at 900 degrees C in a nitrogen atmosphere exhibited improved memory characteristics, in terms of a larger window in the capacitance-voltage hysteresis, better data retention (lower charge loss of 11%), faster program and erase cycles, and endurance characteristics (104 P/E cycles) without any significant drift in the flat band voltage. Therefore, the MOHOS memory device with a NiO2 trapping layer is a very promising candidate for future memory device applications. (C) 2017 Elsevier Ltd. All rights reserved.
Sensing and structural properties of Ti-doped tin oxide (SnO2) membrane for bio-sensor applications
(2017-09-01)
Isabel, A. Panimaya Selvi
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Kao, Chyuan Haur
;
Mahanty, Rama Krushna
;
Wu, Yew Chung Sermon
;
Li, Chung Yi
We investigated the effect of rapid thermal annealing (RTA) on the sensing and structural characteristics of Ti-doped SnO2 based electrolyte-insulator-semiconductor (EIS) pH sensors. The Ti-doped Tin oxide (SnO2) EIS sensor annealed at 700 degrees C post deposition annealing, exhibits the best sensing characteristics in terms of sensitivity, linearity, hysteresis and drift rate. This derives from Ti incorporation that improves the thin-film stoichiometry by reducing dangling bonds on the dielectric surface and improves the temperature stability. We further studied the structural, compositional, and morphological characteristics of the deposited thin-film. RTA treatment increases the sensitivity and linearity by creating larger grain size and higher number of surface sites. Sodium (Na+) and potassium (K+) sensing performance was also measured using the fabricated EIS sensors.
The CeO2 Sensing Membrane in Electrolyte-Insulator-Semiconductor for Bio-Sensor Applications
(2014)
Liu, Che Chun
;
Lee, Ming Ling
;
Chang, Kow Ming
;
Chang, Shan Wei
;
Chen, Hsiang
In the paper, the EIS structure with high-k CeO2 sensing film has more responsive to H+ relative to Na+ and K+. The CeO2 sensing membrane annealed with O-2 at 800 degrees C shows a higher sensitivity of 58.76 mV/pH, higher linearity, lower hysteresis voltage of 5.97 mV and lower drift rate of 0.96 mV/hr than the other conditions.
The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applications
(2014)
Lin, Chih Ju
;
Lee, Ming Ling
;
Chang, Kow Ming
;
Chang, Shan Wei
;
Chen, Hsiang
In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900 degrees C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.