Browsing by Author "Lin, Chun-Hsiung"

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Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition
(2020-09-01)
Zheng, Xia-Xi
;
Lin, Chun-Hsiung
;
Ueda, Daisuke
;
Chang, Edward-Yi
;
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In this paper, we present the dependence of structural and electrical properties of AlN/GaN heterostructure on the growth temperature on sapphire substrates by metal organic chemical vapor deposition. The results revealed that higher Ga incorporation (similar to 47%) and higher trench density on the surface of AlN barrier layer when grown at 1125 degrees C. However, further decreasing the AlN growth temperature to 500 degrees C results in the lower Ga incorporation (similar to 5%), higher dislocation density, 3D island growth and larger tensile strain of AlN barrier layer. Degradation of structural properties and surface morphologies AlN barrier layer results in the higher resistivity of 2-dimensional electron gas transport properties. Low sheet resistance (255.45 Omega/sq), high free carrier electron density (2.86 x 10(13) cm(-2)), simultaneously maintaining low surface roughness and high crystal quality of AlN barrier were achieved at optimized growth temperature around 800 degrees C.
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
(2013-05-01)
Hai Dang Trinh
;
Lin, Yueh Chin
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Chang, Edward Yi
;
Lee, Ching-Ting
;
Wang, Shin-Yuan
The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature > 300 degrees C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.
Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
(2014-04-01)
Lin, Yueh-Chin
;
Huang, Mao-Lin
;
Chen, Chen-Yu
;
Chen, Meng-Ku
;
Lin, Hung-Ta
A low interface trap density (D-it) Al2O3/In0.53Ga0.47As/Si MOS capacitor fabricated on an In0.53Ga0.47As heterostructure layer directly grown on a 300 mm on-axis Si(100) substrate by MOCVD with a very thin buffer layer is demonstrated. Compared with the MOS capacitors fabricated on the In0.53Ga0.47As layer grown on the lattice-matched InP substrate, the Al2O3/In0.53Ga0.47As MOS capacitors fabricated on the Si substrate exhibit excellent capacitance-voltage characteristics with a small frequency dispersion of approximately 2.5%/decade and a low interlace trap density D-it close to 5.5 x 10(11)cm(-2) eV(-1). The results indicate the potential of integrating high-mobility InGaAs-based materials on a 300 mm Si wafer for post-CMOS device application in the future. (C) 2014 The Japan Society of Applied Physics