Browsing by Author "Lin, Chun-Liang"

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New realisation of Preisach model using adaptive polynomial approximation
(2012)
Liu, Van-Tsai
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Lin, Chun-Liang
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Wing, Home-Young
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電控工程研究所
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Institute of Electrical and Control Engineering
"Modelling system with hysteresis has received considerable attention recently due to the increasing accurate requirement in engineering applications. The classical Preisach model (CPM) is the most popular model to demonstrate hysteresis which can be represented by infinite but countable first-order reversal curves (FORCs). The usage of look-up tables is one way to approach the CPM in actual practice. The data in those tables correspond with the samples of a finite number of FORCs. This approach, however, faces two major problems: firstly, it requires a large amount of memory space to obtain an accurate prediction of hysteresis; secondly, it is difficult to derive efficient ways to modify the data table to reflect the timing effect of elements with hysteresis. To overcome, this article proposes the idea of using a set of polynomials to emulate the CPM instead of table look-up. The polynomial approximation requires less memory space for data storage. Furthermore, the polynomial coefficients can be obtained accurately by using the least-square approximation or adaptive identification algorithm, such as the possibility of accurate tracking of hysteresis model parameters."
Scanning tunneling spectroscopy studies of topological materials
(2020-06-03)
Lin, Chun-Liang
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Kawakami, Naoya
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Arafune, Ryuichi
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Minamitani, Emi
;
Takagi, Noriaki
Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe2 and MoTe2) to two dimensional topological insulators (layered bismuth and silicene). The electronic characteristics of these layered topological materials are experimentally identified.