Browsing by Author "Lin, Chung-Kuang"

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Bump Resistance Change Behavior due to Cu-Sn IMCs Formation with Various Solder Diameters
(2015)
Hsieh, Wan-Lin
;
Lin, Chung-Kuang
;
Zhan, Chau-Jie
;
Huang, Yu-wei
;
Chen, Chih
Theoretical calculation and simulation of FEM were proposed to explain the decline of change in resistance in Cu-Sn microbumps during the electromigration test. The IMC transformation from Cu6Sn5 to Cu3Sn was supposed to be the reason. Being aware that the dimension keeps shrinking, the behavior for various solder diameters was also investigated.
Fine pitch "NCF-type Compliant-bumped COG"
(2007)
An, Chao-Chyun
;
Chang, Shyh-Ming
;
Chen, Ming-Yao
;
Kao, Kuo-Shu
;
Tsang, Jimmy
Non-Conductive-Film (NCF) type of Chip-on-Glass (COG) bonding method ensures the micro-order direct bonding between the IC electrode and glass substrate electrode. The binding force of the applied adhesive achieves electrical connections between the bumps on the IC chip and the electrodes on the glass substrate. The mathematical calculation results of bump stress and bump deformation are used to identify the environmental temperature range for the given COG bonding structure. Both of the calculation and experimental results demonstrate the feasibility of using the compliant bumps to achieve a high compressive stress, high bump deformation and low as well as stable connection resistance at various environmental temperatures. The 1,000 hrs 85 degrees C/85%RH reliability test result will be indicated.
Formation Mechanism of Porous Cu3Sn Intermetallic Compounds by High Current Stressing at High Temperatures in Low-Bump-Height Solder Joints
(2016-01-01)
Lin, Jie-An
;
Lin, Chung-Kuang
;
Liu, Chen-Min
;
Huang, Yi-Sa
;
Chen, Chih
Electromigration tests of SnAg solder bump samples with 15 m bump height and Cu under-bump-metallization (UBM) were performed. The test conditions were 1.45 x 10(4) A/cm(2) at 185 degrees C and 1.20 x 10(4) A/cm(2) at 0 degrees C. A porous Cu3Sn intermetallic compound (IMC) structure was observed to form within the bumps after several hundred hours of current stressing. In direct comparison, annealing alone at 185 degrees C will take more than 1000 h for porous Cu3Sn to form, and it will not form at 170 degrees C even after 2000 h. Here we propose a mechanism to explain the formation of this porous structure assisted by electromigration. The results show that the SnAg bump with low bump height will become porous-type Cu3Sn when stressing with high current density and high temperature. Polarity effects on porous Cu3Sn formation is discussed.
The brand-new high density "NCF=-type compliant-bumped COG" in high resolution LCD
(2007-01-01)
Chang, Shyh-Ming
;
Kao, Kuo-Shu
;
An, Chao-Chyun
;
Chen, Ming-Yao
;
Tsang, Jimmy
Non-Conductive-Film (NCF) bonding method ensures the micro-order direct bonding between the IC electrode and circuit substrate electrode. The binding force of the applied adhesive achieves electrical connections between the bumps on the IC chip and the electrodes on the substrate. The stress analysis results are used to identify the appropriate temperature range for the given NCF bonding structure. Both analytical and experimental results demonstrate the feasibility of using the compliant bumps to achieve a high compressive stress and low as well as stable connection resistance at various environmental temperatures.
Theoretical stress calculation and experimental results of "NCF-type compliant-bumped COG"
(2007)
Chen, Ming-Yao
;
An, Chao-Chyun
;
Chang, Shyh-Ming
;
Kao, Kuo-Shu
;
Tsang, Jimmy
Non-Conductive-Film (NCF) bonding method ensures the micro-order direct bonding between the IC electrode and circuit substrate electrode. The binding force of the applied adhesive achieves electrical connections between the bumps on the IC chip and the electrodes on the substrate. The stress analysis results are used to identify the appropriate temperature range for the given NCF bonding structure. Both analytical and experimental results demonstrate the feasibility of using the compliant bumps to achieve a high compressive stress and low, and stable connection resistance at various environmental temperatures. In addition, the reliability test results will be discussed.