Browsing by Author "Lin, G"

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1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
(2005-10-27)
Peng, PC
;
Chang, YH
;
Kuo, HC
;
Tsai, WK
;
Lin, G
A 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been experimentally demonstrated. The QD VCSEL is fabricated on GaAs substrate. The 3 dB frequency response of the QD VCSEL based on the TO-Can package is enhanced from the free-running 1.75 to 7.44 GHz with the light injection technique.
980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence
(1996)
Yen, ST
;
Lin, G
;
Liu, DC
;
Tsai, CM
;
Lee, CP
Comparison of 1300 nm quantum well lasers using different material systems
(2002-12-01)
Lin, G
;
Lee, CP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.
Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers
(2005-12-01)
Wang, JS
;
Lin, G
;
Hsiao, RS
;
Yang, CS
;
Lai, CM
High-power 3 mu m-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.
Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
(1996-12-01)
Lin, G
;
Yen, ST
;
Lee, CP
;
Liu, DC
;
電子工程學系及電子研究所
We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.
Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
(1996-12-01)
Lin, G
;
Yen, ST
;
Lee, CP
;
Liu, DC
;
電子工程學系及電子研究所
We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.
Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate
(1998-03-01)
Fan, JC
;
Tsai, CM
;
Chen, KY
;
Wang, SY
;
Lin, G
Low-resistance ohmic conduction across an epitaxially lifted-off(ELO) thin n-GaAs film and a Si substrate was obtained by attaching the ELO film on the Si substrate coated with a Pd/Ge/Pd multilayer. Good bonding and ohmic contacts to both GaAs and Si were achieved at the same time after annealing. The interface compound formation was studied by secondary ion mass spectroscopy and x-ray diffraction analyses. This ELO technology was used to fabricate an ELO stripe geometry diode laser on Si with the back-side contact on Si substrate. Good laser performance with comparable characteristics as conventional laser diodes on GaAs substrates was obtained.
Mode control of vertical-cavity surface-emitting lasers by germanium coating
(2001-02-01)
Chiou, SW
;
Lin, G
;
Lee, CP
;
Yang, HP
;
Sung, CP
We have successfully developed a selective surface coating technique to control the modal behavior of the ion-implanted vertical-cavity surface-emitting laser (VCSEL). With selective deposition of a germanium coating by the lift-off process, we could spatially control the threshold gain condition of the VCSEL to support the single transverse mode. The threshold current is 7 mA and single transverse mode operation is maintained up to I mW. The method is simple and nondestructive compared with other techniques.
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m
(2004-11-01)
Wang, JS
;
Hsiao, RS
;
Lin, G
;
Lin, KF
;
Liu, HY
Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 mum have been demonstrated. Infinite-cavity-length threshold-current density of 400 A /cm(2), internal quantum efficiency of 96%. and a slope efficiency of 0.67 W/A for a cavity length L=1 mm were obtained. A TO46 packaging laser shows sin-le lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover. 1.3 Am InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm(2) at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A. respectively. (C) 2004 American Vacuum Society.
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
(2006-03-01)
Chang, YH
;
Peng, PC
;
Tsai, WK
;
Lin, G
;
Lai, F
We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-mu m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is similar to 330 mu W with slope efficiency of 0.18 W/A at room temperature. Single-mode operation was obtained with a sidemode suppression ratio of > 30 dB. The modulation bandwidth and eye diagram in 2.5 Gb/s was also presented.
Singlemode InAs quantum dot photonic crystal VCSELs
(2005-09-29)
Yang, HPD
;
Chang, YH
;
Lai, FI
;
Yu, HC
;
Hsu, YJ
An InAs quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fibre-optic applications is first demonstrated. Single fundamental mode CW output power of 0.2 mW has been achieved in the 1300 nm range, with a threshold current of 4.75 mA. Side-mode suppression ratio larger than 40 dB has been observed over the entire thermally limited operation range.
Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off
(1997-06-05)
Fan, JC
;
Chen, KY
;
Lin, G
;
Lee, CP
;
電子工程學系及電子研究所
The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n(+)-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.
Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off
(1997-06-05)
Fan, JC
;
Chen, KY
;
Lin, G
;
Lee, CP
;
電子工程學系及電子研究所
The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n(+)-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.
Two-dimensional field analysis of semiconductor lasers with small vertical beam divergence
(2002-07-01)
Lin, G
;
Lee, CP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Two-dimensional (2D) optical field distribution and the far-field patterns are analyzed for semiconductor lasers with small vertical beam divergence. The discrete spectral index method is used for the analysis and compared with other methods such as the effective index method. The discrete spectral index method is found to be much better in terms of accuracy and computation efficiency for the laser structures studied. Two laser structures with experimental counterparts are studied. The best beam aspect ratio (<1.5) is achieved using the conventional ridge waveguide process. The calculated results compare very favorably with the experimental results. Simulations also reveal the guidelines for design of symmetric optical beam.