Browsing by Author "Lin, G."

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High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers
(2007-09-01)
Lai, Fang-I.
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Yang, H. P. D.
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Lin, G.
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Hsu, I. -Chen
;
Liu, Jui-Nung
A high-power, wide operation-range single-fundamental-mode InGaAs submonolayer (SML) quantum dot (QD) photonic crystal vertical-cavity surface-emitting laser (VCSEL) for fiber-optic applications was demonstrated. Single-fundamental-mode with a threshold current (I-th) of 0.9 mA and maximum continue-wave (CW) output power of 3.8 mW at 28 mA has been achieved in the 990 nm range. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range. The far field measurement shows that the beam divergence angle remains very small and almost unchanged between 6.7-6.9 degrees, with the operation range increasing from 3 to 20 mA.
Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laser
(2013-11-18)
Cheng, H. C.
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Wu, Q. Y.
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Pan, C. H.
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Lee, C. P.
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Lin, G.
Passively mode-locked quantum dot lasers with a grating-coupled external cavity arrangement are investigated. A broad repetition-rate tuning range of fundamental mode-locking from 2GHz to a record-low frequency of 79.3 MHz is achieved with selecting the wavelength at 1.28 mu m. A narrow RF linewidth of similar to 25 Hz and an intrinsic linewidth as low as 0.15 Hz are also obtained. (C) 2013 AIP Publishing LLC.
Modeling of slow light in vertical cavity surface emission lasers
(2007)
Chou, C. -S.
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Lee, R. -K.
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Peng, P. C.
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Kuo, H. C.
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Lin, G.
We develop a model for the slow light in the Vertical Cavity Surface Emission Lasers (VCSELs), with the combinations of cavity and the population pulsation effects. The dependences of pumping power, injection current and wavelength detuning for the group delays are demonstrated theoretically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved in the room temperature at the wavelength of 1.3 mu m. Based on the experimental parameters of quantum dot VCSEL structures, we show that the resonance effect of laser cavity plays a significant role to enhance the group delays.
Novel chirped multilayer quantum-dot lasers
(2008-01-01)
Lin, G.
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Chang, C. Y.
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Tseng, W. C.
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Lee, C. P.
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Lin, K. F.
Chirped multilayer (N=10) QD lasers with 2-, 3- and 5-layer of longer-, medium-, and shorter-wavelength QD stacks, respectively, were grown in this work. Low threshold current density and high saturated modal gain were achieved in this specially designed QD structure. Empirical gain-current analysis was performed on this chirped multilayer QD structure for the first time. It was consistent with our spectral observations and provided valuable information on carrier recombination in chirped multilayer QD structure. Two novel spectral characteristics were discovered also for the first time. First, simultaneous two-wavelength lasing around threshold was observed under particular gain-loss condition at this specific multilayer structure of QD stacking numbers. Second, at cryogenic temperature, simultaneous two-wavelength lasing emissions switched from longer-wavelength lasing first to shorter-wavelength lasing first with increasing current injection. Non-uniform carrier distribution among chirped multilayer QD structure is evident at low temperature below 200 K from our analysis.
Novel chirped multilayer quantum-dot lasers - art. no. 69970R
(2008)
Lin, G.
;
Chang, C. Y.
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Tseng, W. C.
;
Lee, C. P.
;
Lin, K. F.
Chirped multilayer (N=10) QD lasers with 2-, 3- and 5-layer of longer-, medium-, and shorter-wavelength QD stacks, respectively, were grown in this work. Low threshold current density and high saturated modal gain were achieved in this specially designed QD structure. Empirical gain-current analysis was performed on this chirped multilayer QD structure for the first time. It was consistent with our spectral observations and provided valuable information on carrier recombination in chirped multilayer QD structure. Two novel spectral characteristics were discovered also for the first time. First, simultaneous two-wavelength lasing around threshold was observed under particular gain-loss condition at this specific multilayer structure of QD stacking numbers. Second, at cryogenic temperature, simultaneous two-wavelength lasing emissions switched from longer-wavelength lasing first to shorter-wavelength lasing first with increasing current injection. Non-uniform carrier distribution among chirped multilayer QD structure is evident at low temperature below 200 K from our analysis.
Polarization Switching in 1.3-mu m Quantum Dot Vertical Cavity Surface Emitting Lasers
(2009)
Wu, F. M.
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Lan, R. L.
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Peng, P. C.
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Huang, C. C.
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Peng, R. Y.
This work for the first time, experimentally demonstrates the polarization switching in 1.3 mu m quantum dot VCSEL. The polarization switching in quantum dot VCSEL is achieved by adjusting the optical injection power. (C)2009 Optical Society of America
Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs
(2006-08-01)
Yang, H. P. D.
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Hsu, I. C.
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Lai, F. I.
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Lin, G.
;
Hsiao, R. S.
An InGaAs submonolayer ( SML) quantum dot photonic crystal vertical-cavity surface-emitting laser ( QD PhC-VCSEL) for fibre-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio ( SMSR) larger than 35 dB has been observed over the entire current operating range.
Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz
(2006-08-31)
Peng, P. C.
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Lin, C. T.
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Kuo, H. C.
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Lin, G.
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Tsai, W. K.
This investigation experimentally demonstrates tunable optical group delay in a 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL). The QD VCSEL is fabricated on a GaAs substrate. Tunable delays are achieved by varying the bias currents, and the maximum delay of 42 ps at 10 GHz has been demonstrated at room temperature.
Tunable slow light device using quantum dot semiconductor laser
(2006-12-25)
Peng, P. C.
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Lin, C. T.
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Kuo, H. C.
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Tsai, W. K.
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Liu, J. N.
This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mu m fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system. (C) 2006 Optical Society of America.
Wavelength switching based on quantum-dot vertical-cavity surface-emitting laser
(2012-09-01)
Peng, P. C.
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Wang, H. Y.
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Lan, R. L.
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Lu, H. H.
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Lin, G. R.
This study investigates, for the first time, static and dynamic wavelength switching characteristics of the 1.3 mu m quantum-dot vertical-cavity surface-emitting laser (QD VCSEL). The free-running QD VCSEL with lambda 1 and lambda 2 state innately is injected by a laser source with lambda 1 state. When the injection power exceeds the threshold power, the dominant state of the QD VCSEL changes from lambda 2 to lambda 1 state. Results of this study demonstrate that the wavelength switching based on a 1.3 mu m QD VCSEL has a simpler and more cost-effective configuration than those of previous systems.