Browsing by Author "Lin, Gin Min"

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A novel four-mask-step low-temperature polysilicon thin-film transistor with self-aligned raised source/drain (SARSD)
(2007-01-01)
Chang, Kow Ming
;
Lin, Gin Min
;
Chen, Cheng Guo
;
Hsieh, Mon Fan
;
電子工程學系及電子研究所
In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher ON-state current and a lower OFF-state leakage current. Moreover, the ON/OFF current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT.
Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process
(2007-09-01)
Chang, Kow Ming
;
Lin, Gin Min
;
Yang, Guo Liang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this letter, a novel structure of the polycrystalline silicon thin-film transistors (TFTs) with a self-aligned gate and raised source/drain (RSD) formed by the damascene process has been developed and investigated. Comparing with the conventional coplanar TFT, the proposed RSD TFT has a remarkable lower OFF-state current (177 to 6.29 nA), and the ON/OFF current ratio is only slightly decreased from 1.71 x 10(7) to 1.39 x 10(7). Only four photomasking steps are required. This novel structure is an excellent candidate for further high-performance large-area device applications.