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Browsing by Author "Lin, Gong-Cheng"

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    A Novel Anti-Reflecton Coated FP Laser Amplifier for 2.5Gbit/s DWDM-PON Transmission
    (2007)
    Liao, Yu-Sheng
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    Chen, Yung-Jui
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    Huang, Yin-Hsun
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    Wang, Hai-Lin
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    Ko, Sun-Chien
    A novel anti-reflection coated Fabry-Perot laser amplifier under side-mode injection-locking for 2.5Gbit/s DWDM-PON is demonstrated with SMSR >35dB, Q-factor 9.2, locking range of 30nm, power penalty of -0.7dB, and BER of 10(-12) at -23.7dBm. (c) 2007 Optical Society of America
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    A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission
    (2012-06-18)
    Lin, Gong-Ru
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    Chi, Yu-Chieh
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    Liao, Yu-Sheng
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    Kuo, Hao-Chung
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    Liao, Zhi-Wang
    By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down-and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bidirectional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate <10(-10) is -25.6 dBm, and the power penalty added after 25-km transmission is less than 2 dB for all 16 channels. (C) 2012 Optical Society of America
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    Long-Cavity Fabry-Perot Laser Amplifier Transmitter With Enhanced Injection-Locking Bandwidth for WDM-PON Application
    (2010-10-15)
    Lin, Gong-Ru
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    Liao, Yu-Sheng
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    Chi, Yu-Chieh
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    Kuo, Hao-Chung
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    Lin, Gong-Cheng
    We simulate the injection-locking performance of a 1% antireflection coated Fabry-Perot laser amplifier (AR-FPLA) and demonstrate the 2.5-Gbit/s DWDM-PON application with the directly modulated AR-FPLA based ONU transmitter under side-mode injection-locking condition. The effect of the AR-FPLA front-facet reflectivity on the injection locking range detuning and the Q-factor are interpreted from theoretical simulations and are experimentally characterized. A 25-channel locking capacity is reported for such a side-mode injection-locked AR-FPLA with corresponding wavelength locking range of 30 nm, the minimal requested power of -7 dBm and gain extinction ratio of < 7 dB by reducing its front-facet reflectivity to 1%. At bit rate of 2.5 Gbit/s, the BER of 10(-12) is achievable for the nearest 17 channels of AR-FPLA at receiving power of -21 dBm, and all of the 25 injection-locked channels with SMSR of > 35 dB can guarantee the BER of < 10(-9) with their worst receiving sensitivity degrading to -19 dBm.
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    Self-seeding injection of anti-reflection coated FP laser amplifier based transmitters for wavelength division multiplexing PON
    (2007-01-01)
    Lin, Gong-Cheng
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    Ko, Sun-Chien
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    Huang, Yin-Hsun
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    Wang, Hai-Lin
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    Liao, Yu-Sheng
    We experimentally demonstrate a directly modulated 1% AR-FPLA based ONU under side-mode injection-locking for 1.25Gbits/s DWDM-PON application. With side-mode injection of this device, the characterizes of 34-channel detuning capacity under self seeding and its corresponding to a wavelength locking range of 30 nm is a potential candidate to achieve the cost effective and high capability 1.25 Gbits/s DWDM-PON systems. The effects of the front-facet reflectivity in the AR-FPLA on injection locking range, spontaneous emission, and Q-factor are interpreted from our results. A BER of < 10(-12) is obtained for the nearest 17 channels and a 10(-10) error rate can be achieved for all of the 34 injection-locked channels with SMSR >35dB, providing a negative power penalty of -0.7 dB.