Browsing by Author "Lin, Gong-Ru"

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10 Gbit/s all-optical NRZ-to-RZ data format conversion in a dark-optical-comb injected semiconductor optical amplifier
(2006)
Hung, Chi-Ming
;
Yu, Kun-Chieh
;
Chang, Yung-Cheng
;
Lin, Gong-Ru
;
光電工程學系
All-optical 10 Gbit/s NRZ-to-RZ data-format conversion in a backward dark-optical-comb injected semiconductor optical amplifier with BER of 10(-13) at receiving power of -19 dBm and a positive power penalty of 3.7 dB is primarily demonstrated. (C) 2006 Optical Society of America.
10GHz dark-optical-comb injection-mode-locked semiconductor optical amplifier fiber laser with 400fs and 30nm tunable pulses
(2006)
Lin, Gong-Ru
;
Chin, I-Hsiang
;
光電工程學系
;
Department of Photonics
A 30nm wavelength-tunable backward dark-optical-comb injection-mode-locked semiconductor optical amplifier fiber laser with pedestal-free and transform-limited pulsewidth of 180fs and 400fs at 1GHz and 10GHz, respectively, is reported after high-order soliton compression with maximum pulse compression ratio of up to 80. (c) 2006 Optical Society of America.
12 GHz passive harmonic mode-locking in a 1.06 mu m semiconductor optical amplifier-based fiber laser with figure-eight cavity configuration
(2013-03-15)
Chen, Hou-Ren
;
Lin, Kuei-Huei
;
Tsai, Chih-Ya
;
Wu, Hsiao-Hua
;
Wu, Chih-Hsuan
We report the generation of passively harmonic mode-locked pulses using a 1.06 mu m semiconductor optical amplifier (SOA) in a figure-eight laser configuration operated in the all-normal-dispersion regime. Different orders of harmonic mode-locking can be obtained from 30 MHz to 12.02 GHz by changing the injection current of the SOA from 80 to 660 mA together with the adjustment of polarization controllers. The highest pulse repetition rate increases almost linearly with the SOA current. As SOA current is set to 660 mA, we obtain the intracavity power of 46 mW at the highest repetition rate of 12.02 GHz, corresponding to the 1202th harmonic of the fundamental mode-locking frequency. To our best knowledge, this is the lowest intracavity power to generate the highest repetition rate with a passively mode-locked laser in the all-normal-dispersion regime. (C) 2013 Optical Society of America
20-Gbps WDM-PON Transmissions Employing Weak-resonant-cavity FPLD with OFDM and SC-FDE Modulation Formats
(2013-01-01)
Lu, I-Cheng
;
Chen, Hsing-Yu
;
Wei, Chia-Chien
;
Chi, Yu-Chieh
;
Lee, Yi-Cheng
We experimentally demonstrate a superior performance of 20-Gbps OFDM/SC-FDE transmission over 20-km WDM-PONs, using a channelized weak-resonant-cavity FPLD with a modulation bandwidth of only 1.25 GHz by using injection-locking, direct detection and adopting the power-loading algorithm.
20-Gbps WDM-PON transmissions employing weak-resonant-cavity FPLD with OFDM and SC-FDE modulation formats
(2013-04-08)
Lu, I-Cheng
;
Wei, Chia-Chien
;
Jiang, Wen-Jr
;
Chen, Hsing-Yu
;
Chi, Yu-Chieh
Using a colorless weak-resonant-cavity (WRC) FPLD injected by a centralized light source, we have experimentally demonstrated a superior performance of 20-Gbps uplink transmission in a WDM-PON. Even though the typical modulation bandwidth of a WRC-FPLD is only similar to 1.25 GHz, using spectrally-efficient 32-QAM OFDM or SC-FDE modulation, 20-Gbps uplink signals can achieve the FEC limit after 25-km dispersion-uncompensated single-mode fiber transmission. Because of the advantage of lower PAPR, the SC-FDE signals outperform the OFDM signals with the fixed 32-QAM format in the proposed system; moreover, SC-FDE scheme can be another promising candidate for uplinks in WDM-PONs, for its simplification to ONUs. The signal at the mode of 1560.7 nm shows similar quality with the signal at the modes of 1545.3 nm and 1574.7 nm, the WRC-FPLD, accordingly, has wide injection wavelength range from at least 1545.3 nm to 1574.7 nm. With the mode spacing of 0.55 nm, consequently, we have demonstrated the applicability of the colorless WRC-FPLD on supporting up to 36 channels in the WDM-PON. (C) 2013 Optical Society of America
22-channel capacity of 2.5Gbit/s DWDM-PON ONU transmitter by direct-modularly side-mode injection locked FPLD
(2007-01-01)
Liao, Yu-Sheng
;
Chen, Yung-Jui
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
22-channel detuning capacity of a 2.5Gbit/s directly modulated FPLD based ONU under side-mode injection-locking for DWDM-PON is demonstrated with SMSR >35dB, Q-factor 6.8-9.2, locking range of 24nm, power penalty of -0.7dB, and BER of 10(-10) at -17dBm. The demonstrated side-mode injection-locked FPLD is a potential candidate to achieve the cost effective and high capability 2.5Gbit/s DWDM-PON systems. The maximum usable ONU channels of the side-mode injection-locking FPLD are 22, corresponding to a wavelength locking range of 24 nm. Direct modulation of the upstream channels was successfully obtained and shows high quality eye diagram at ONU transmission.
22-channel capacity of 2.5Gbit/s DWDM-PON ONU transmitter by direct-modularly side-mode injection locked FPLD - art. no. 67832L
(2007)
Liao, Yu-Sheng
;
Chen, Yung-Jui
;
Lin, Gong-Ru
;
光電工程學系
;
Department of Photonics
22-channel detuning capacity of a 2.5Gbit/s directly modulated FPLD based ONU under side-mode injection-locking for DWDM-PON is demonstrated with SMSR >35dB, Q-factor 6.8-9.2, locking range of 24nm, power penalty of -0.7dB, and BER of 10(-10) at -17dBm. The demonstrated side-mode injection-locked FPLD is a potential candidate to achieve the cost effective and high capability 2.5Gbit/s DWDM-PON systems. The maximum usable ONU channels of the side-mode injection-locking FPLD are 22, corresponding to a wavelength locking range of 24 nm. Direct modulation of the upstream channels was successfully obtained and shows high quality eye diagram at ONU transmission.
4-Gbit/s visible light communication link based on 16-QAM OFDM transmission over remote phosphor-film converted white light by using blue laser diode
(2015-12-28)
Retamal, Jose Ramon Duran
;
Oubei, Hassan Makine
;
Janjua, Bilal
;
Chi, Yu-Chieh
;
Wang, Huai-Yung
Visible Light Communication (VLC) as a new technology for ultrahigh-speed communication is still limited when using slow modulation light-emitting diode (LED). Alternatively, we present a 4-Gbit/s VLC system using coherent blue-laser diode (LD) via 16-quadrature amplitude modulation orthogonal frequency division multiplexing. By changing the composition and the optical-configuration of a remote phosphor-film the generated white light is tuned from cool day to neutral, and the bit error rate is optimized from 1.9 x 10(-2) to 2.8 x 10(-5) in a blue filter-free link due to enhanced blue light transmission in forward direction. Briefly, blue-LD is an alternative to LED for generating white light and boosting the data rate of VLC. (C) 2015 Optical Society of America
4-Gbit/s visible light communication link based on 16-QAM OFDM transmission over remote phosphor-film converted white light by using blue laser diode
(2015-12-28)
Retamal, Jose Ramon Duran
;
Oubei, Hassan Makine
;
Janjua, Bilal
;
Chi, Yu-Chieh
;
Wang, Huai-Yung
Visible Light Communication (VLC) as a new technology for ultrahigh-speed communication is still limited when using slow modulation light-emitting diode (LED). Alternatively, we present a 4-Gbit/s VLC system using coherent blue-laser diode (LD) via 16-quadrature amplitude modulation orthogonal frequency division multiplexing. By changing the composition and the optical-configuration of a remote phosphor-film the generated white light is tuned from cool day to neutral, and the bit error rate is optimized from 1.9 x 10(-2) to 2.8 x 10(-5) in a blue filter-free link due to enhanced blue light transmission in forward direction. Briefly, blue-LD is an alternative to LED for generating white light and boosting the data rate of VLC. (C) 2015 Optical Society of America
4.8 Gbit/s 16-QAM-OFDM transmission based on compact 450-nm laser for underwater wireless optical communication
(2015-09-07)
Oubei, Hassan M.
;
Duran, Jose R.
;
Janjua, Bilal
;
Wang, Huai-Yung
;
Tsai, Cheng-Ting
We experimentally demonstrate an underwater wireless optical communications (UWOC) employing 450-nm TO-9 packaged and fiber-pigtailed laser diode (LD) directly encoded with an orthogonal frequency division multiplexed quadrature amplitude modulation (QAM-OFDM) data. A record data rate of up to 4.8 Gbit/s over 5.4-m transmission distance is achieved. By encoding the full 1.2-GHz bandwidth of the 450-nm LD with a 16-QAM-OFDM data, an error vector magnitude (EVM) of 16.5%, a signal-to-noise ratio (SNR) of 15.63 dB and a bit error rate (BER) of 2.6 x 10-3, well pass the forward error correction (FEC) criterion, were obtained. (C) 2015 Optical Society of America
450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM
(2015-05-18)
Chi, Yu-Chieh
;
Hsieh, Dan-Hua
;
Tsai, Cheng-Ting
;
Chen, Hsiang-Yu
;
Kuo, Hao-Chung
A TO-38-can packaged Gallium nitride (GaN) blue laser diode (LD) based free-space visible light communication (VLC) with 64-quadrature amplitude modulation (QAM) and 32-subcarrier orthogonal frequency division multiplexing (OFDM) transmission at 9 Gbps is preliminarily demonstrated over a 5-m free-space link. The 3-dB analog modulation bandwidth of the TO-38-can packaged GaN blue LD biased at 65 mA and controlled at 25 degrees C is only 900 MHz, which can be extended to 1.5 GHz for OFDM encoding after throughput intensity optimization. When delivering the 4-Gbps 16-QAM OFDM data within 1-GHz bandwidth, the error vector magnitude (EVM), signal-to-noise ratio (SNR) and bit-error-rate (BER) of the received data are observed as 8.4%, 22.4 dB and 3.5 x 10(-8), respectively. By increasing the encoded bandwidth to 1.5 GHz, the TO-38-can packaged GaN blue LD enlarges its transmission capacity to 6 Gbps but degrades its transmitted BER to 1.7 x 10(-3). The same transmission capacity of 6 Gbps can also be achieved with a BER of 1 x 10(-6) by encoding 64-QAM OFDM data within 1-GHz bandwidth. Using the 1.5-GHz full bandwidth of the TO-38-can packaged GaN blue LD provides the 64-QAM OFDM transmission up to 9 Gbps, which successfully delivers data with an EVM of 5.1%, an SNR of 22 dB and a BER of 3.6 x 10(-3) passed the forward error correction (FEC) criterion. (C) 2015 Optical Society of America
60-GHz Millimeter-wave Over Fiber with Directly Modulated Dual-mode Laser Diode
(2016-06-14)
Tsai, Cheng-Ting
;
Lin, Chi-Hsiang
;
Lin, Chun-Ting
;
Chi, Yu-Chieh
;
Lin, Gong-Ru
A directly modulated dual-mode laser diode (DMLD) with third-order intermodulation distortion (IMD3) suppression is proposed for a 60-GHz millimeter-wave over fiber (MMWoF) architecture, enabling new fiber-wireless communication access to cover 4-km single-mode-fiber (SMF) and 3-m wireless 16-QAM OFDM transmissions. By dual-mode injection-locking, the throughput degradation of the DMLD is mitigated with saturation effect to reduce its threshold, IMD3 power and relative intensity noise to 7.7 mA, -85 dBm and -110.4 dBc/Hz, respectively, providing huge spurious-free dynamic range of 85.8 dB/Hz(2/3). This operation suppresses the noise floor of the DMLD carried QPSK-OFDM spectrum by 5 dB. The optical receiving power is optimized to restrict the power fading effect for improving the bit error rate to 1.9 x 10(-3) and the receiving power penalty to 1.1 dB. Such DMLD based hybrid architecture for 60-GHz MMW fiber-wireless access can directly cover the current optical and wireless networks for next-generation indoor and short-reach mobile communications.
850/940-nm VCSEL for optical communication and 3D sensing
(2018-01-01)
Cheng, Chih-Hsien
;
Shen, Chih-Chiang
;
Kao, Hsuan-Yun
;
Hsieh, Dan-Hua
;
Wang, Huai-Yung
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
A Novel Anti-Reflecton Coated FP Laser Amplifier for 2.5Gbit/s DWDM-PON Transmission
(2007)
Liao, Yu-Sheng
;
Chen, Yung-Jui
;
Huang, Yin-Hsun
;
Wang, Hai-Lin
;
Ko, Sun-Chien
A novel anti-reflection coated Fabry-Perot laser amplifier under side-mode injection-locking for 2.5Gbit/s DWDM-PON is demonstrated with SMSR >35dB, Q-factor 9.2, locking range of 30nm, power penalty of -0.7dB, and BER of 10(-12) at -23.7dBm. (c) 2007 Optical Society of America
A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission
(2012-06-18)
Lin, Gong-Ru
;
Chi, Yu-Chieh
;
Liao, Yu-Sheng
;
Kuo, Hao-Chung
;
Liao, Zhi-Wang
By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down-and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bidirectional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate <10(-10) is -25.6 dBm, and the power penalty added after 25-km transmission is less than 2 dB for all 16 channels. (C) 2012 Optical Society of America
All-optical decision-gating of 10-Gb/s RZ data in a semiconductor optical amplifier temporally gain-shaped with dark-optical-comb
(2007-07-01)
Lin, Gong-Ru
;
Yu, Kun-Chieh
;
Pan, Ci-Ling
;
Liao, Yu-Sheng
;
光電工程學系
We demonstrate a novel all-optical noninverted OC-192 return-to-zero (RZ) decision-gate by using a semiconductor optical amplifier (SOA) which is gain-controlled to achieve an extremely high cross-gain-modulation depth and a narrow gain window. A dark-optical-comb generated by reshaping the optical clock RZ data in a Mach-Zehnder intensity modulator is employed as an injecting source to temporally deplete most of the gain in the SOA. Such a dark-optical-comb injected SOA decision-gate exhibits improved 311 regeneration performances such as a timing tolerance of 33.5 ps, a Q-factor of 8.1, an input dynamical tolerance of 14 dB, and an extinction ratio (ER) of 14 dB. The deviation between the wavelengths of backward injected dark-optical-comb and input RZ data for optimizing the ER of the decision-gate is determined as Delta lambda = 19 nm. Under a threshold operating dark-optical-comb power of 7 dBm, such a decision-gate can recover the - 18.5-dBm degraded RZ data with a bit-error-rate of less than 10(-9) at 10 Gb/s. A negative power penalty of -4.2 dB is demonstrated for the RZ data after 50-km propagation and decision gating.
All-Optical OC-192 RZ data decision gating in dark optical comb injected semiconductor optical amplifier
(2006-01-01)
Liao, Yu-Sheng
;
Yu, Kun-Chieh
;
Lin, Gong-Ru
;
光電工程學系
;
光電工程研究所
We demonstrate a novel all-optical RZ decision gate by using one dark-optical-comb injected SOA which is controlled by a reshaped optical clock with extremely high cross-gain-modulation (XGM) depth and narrow gain window. Such a decision gate exhibits improved 3R regeneration performances including timing tolerance of 33.5 ps, Q factor of 8.1 and extinction ratio of 13.6 dB. The correlation between backward injected dark-comb and input data wavelength region for optimizing the extinction ratio of the decision gated RZ data is determined. Under a threshold operating dark-optical comb power of 7 dBm, such a decision gate can recover the degraded RZ data with a bit-error-rate of less than 10(-9) at 10 Gbits/s.
Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask
(2007-04-02)
Lin, Gong-Ru
;
Lin, Chun-Jung
;
Kuo, Hao-Chung
;
Lin, Huang-Sheng
;
Kao, Chi-Chiang
Microphotoluminescence (mu-PL) of high-aspect-ratio Si nanopillars fabricated by etching Ni-nanodot/SiO2 masked Si substrate is investigated. The 320-nm-tall Si nanopillars obtained by CF4/Ar mixed inductively coupled-plasma reactive ion etching process with density of 2.8x10(10) cm(-2) further shrink size from 30 to 6 nm by oxidation and etching. Blue-green mu-PL with two decomposed wavelengths at 425 and 475 nm is attributed to oxygen-related defects on the oxidized Si nanopillar surface. Defect-related near-infrared PL at 703 and 740 nm remains unchanged, while a quantum-confinement-effect-dependent PL blueshifted from 874 to 826 nm as the Si nanopillar size reduces from 7.2 to 6.0 nm is preliminarily observed. (c) 2007 American Institute of Physics.
Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate
(2009-01-01)
Pai, Yi-Hao
;
Meng, Fan-Shuen
;
Lin, Chun-Jung
;
Kuo, Hao-Chung
;
Hsu, Shih-Hsin
The Si nanopillars with high aspect ratio were fabricated by dry-etching the thin SiO(2)-covered Si substrate with a rapidly self-assembled Ni nanodot patterned mask. Aspect-ratio-dependent ultra-low reflection and anomalous luminescence of Si nanopillars are analyzed for applications in all-Si based lighting and energy transferring systems. The Si nanopillars induce an ultra-low reflectance and refractive index of 0.88% and 1.12, respectively, at 435 nm due to the air/Si mixed structure and highly roughened surface. The reflectance can be < 10% with a corresponding refractive index of < 1.80 between 190 and 670 nm. Lengthening the Si nanopillars from 150 +/- 15 to 230 +/- 20 nm further results in a decreasing reflectance, corresponding to a reduction in refractive index by Delta n/n = 18% in the visible and near-infrared wavelength region. After dry-etching an Si wafer into Si nanopillars, the weak blue-green luminescence with double consecutive peaks at 418-451 nm is attributed to the oxygen defect (O(2-))-induced radiation, which reveals less relevance with the ultra-low-reflective Si nanopillar surface.
Backscattering Effect of Phosphor Diffuser on the Blue Laser Diode Based 5.2-Gbps Li-Fi Communication Link
(2016)
Chi, Yu-Chieh
;
Wu, Tsai-Chen
;
Hsieh, Dan-Hua
;
Kuo, Hao-Chung
;
Lin, Gong-Ru
A laser diode (LD) based Li-Fi transmitter using phosphor diffuser diverged 450-nm blue LD for white-lighting and 5.2-Gbit/s OFDM with EVM of 17.3%, SNR of 15.3 dB and FEC qualified BER of 3.1x10(-3) is demonstrated.