Browsing by Author "Lin, Guan-Liang"
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Item type:Item, Spacer technique to fabricate pSi TFTs with 50nm nanowire channels(2008) ;Chang, Chia-Wen ;Chen, Szu-Fen ;Wu, Shih-Chieh ;Lin, Guan-LiangLei, Tan-FuIn this work, polycrystalline silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels fabricated without advanced photolithograph v I v using a sidewall spacer formation technique are proposed for the first time. Because the poly gate electrode is perpendicularly across poly-Si NW channels to form a tri-gate-like structure, the proposed poly-Si NW TFT owns an outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.