Browsing by Author "Lin, H. C."

Now showing 1 - 15 of 15

An Electrically Tunable Focusing Pico Projector Using a Liquid Crystal Lens as an Active Optical Element
(2011)
Lin, H. C.
;
Chen, M. S.
;
Lin, Y. H.
;
光電工程學系
;
Department of Photonics
An electrically tunable pico projector adapting a liquid crystal (LC) lens as an active optical element is demonstrated. The electrically tunable focusing properties of the pico-projectors with different aperture sizes of the LC lenses are also investigated. The tunable ranges of the electrically tunable pico projectors are 350cm to 14cm. The response times are 1.2sec for the LC lens of 2mm aperture and around 5sec for the LC lens of 4mm aperture. The image performance of the electrically tunable focusing pico projector is demonstrated.
Characteristics of N-Type Planar Junctionless Poly-Si Thin-Film Transistors
(2012)
Lin, C. I.
;
Lin, H. C.
;
Huang, T. Y.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work, we study the electrical characteristics of planar poly-Si junctionless (JL) thin-film transistors (TFTs) with 10 nm-thick channel and various gate width. The output current of JL devices is drastically larger than that of the control device with an undoped channel, owing to the abundant carriers contained in the channel of the JL devices which tends to reduce both channel and source/drain series resistances. Subthreshold swing of the JL devices is found to be larger than the control ones, owing to the existence of a depletion layer in the channel. Nonetheless, excellent on/off current ratio (>10(7)) is achieved, thanks to the use of the ultra-thin channel.
Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices
(2017-01-01)
Hsueh, C. Y.
;
Huang, T. L.
;
Peng, K. P.
;
Kuo, M. H.
;
Lin, H. C.
We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength tunable photodetectors, and MOSFETs.
Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping
(2007-06-01)
Lu, C. Y.
;
Lin, H. C.
;
Lee, Y. J.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Negative-bias-temperature instability (NBTI) characteristics of strained p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) under dynamic and AC stressing were investigated in this work. The compressive strain in the channel was deliberately induced by a plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) capping layer in this study. It was found that the capping would degrade the NBTI characteristics, although the degradation is relieved when the stress frequency increases. The aggravated NBTI behaviors are ascribed to the higher amount of hydrogen incorporation during SiN deposition. (c) 2006 Published by Elsevier Ltd.
Impacts of NH(3) plasma treatment on double-gated poly-Si nanowire thin-film transistors
(2007)
Lee, K. H.
;
Lin, H. C.
;
Hsu, H. H.
;
Huang, T. Y.
;
電子工程學系及電子研究所
NH(3) plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.
Instability analysis of modulated Taylor vortices
(2009)
Yang, W. M.
;
Lin, H. C.
;
機械工程學系
;
Department of Mechanical Engineering
This study investigates the instability analysis of modulated Taylor vortices flow by utilising a numerical method. Based on the consideration that the outer cylinder is fixed and the inner cylinder rotates at a non-zero averaged speed under varying modulated amplitudes and frequencies, the flow is converted from one-dimension Couette flow to Taylor vortices. When the modulated amplitude is greater than 1 and the rotation speed of the inner cylinder exceeds the threshold value for one-dimensional flow, the flow will be more stable at intermediate and high frequencies. When the modulated amplitude is sufficiently large and the inner cylinder rotates at medium frequency, subharmonic flow arises.
LOWEST STABILITY BOUNDARY ON FLOW OF CONCENTRIC ROTATING CYLINDERS
(2010-05-01)
Lin, H. C.
;
Yang, W. M.
;
機械工程學系
;
Department of Mechanical Engineering
In this study, we numerically investigate the lowest instability boundary of nonaxisymmetric Taylor vortex flow (TVF) for different axial wavenumbers. The variation in the axial wavenumber of a supercritical TVF can affect the instability of the flow, because the wavelength of a Taylor vortex is constant only when the flow is axisymmetrical. When the nonaxisymmetric TVF is transformed to a wavy vortex flow (WVF), the instability boundary is changed with the variation in the axial wavenumber. We carry out an instability analysis of the nonaxisymmetric TVF between two concentric rotating cylinders, which have a radius ratio of 0.88.
New understanding of metal-insulator-metal (MIM) capacitor degradation behavior
(2007)
Hung, Chi-Chao
;
Oates, Anthony S.
;
Lin, H. C.
;
Chang, Percy
;
Wang, J. L.
This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
Operations of poly-Si nanowire thin-film transistors with a multiple-gated configuration
(2007-05-30)
Su, C. J.
;
Lin, H. C.
;
Tsai, H. H.
;
Hsu, H. H.
;
Wang, T. M.
In this study, a novel multiple-gated (MG) thin-film transistor (TFT) with poly-Si nanowire ( NW) channels is fabricated using a simple process flow. In the proposed new transistors, poly-Si NWs were formed in a self-aligned manner and were precisely positioned with respect to the source/drain, and the side-gate. Moreover, the NW channels are surrounded by three gates, i.e., top-gate, side-gate and bottom-gate, resulting in much stronger gate controllability over the NW channels, and greatly enhanced device performance over the conventional single-gated TFTs. Furthermore, the independently applied top-gate and/or bottom-gate biases could be utilized to adjust the threshold voltage of NW channels in a reliable manner, making the scheme suitable for practical applications.
Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platform
(2018-01-01)
Liao, P. H.
;
Kuo, M. H.
;
Tien, C. W.
;
Chang, Y. L.
;
Hong, P. Y.
We report the first-of-its-kind, self-organized gate stack of Ge nanosphere (NP) gate/SiO2/Si1-xGex channel fabricated in a single oxidation step. Process-controlled tunability of the Ge NP size (5-90nm), SiO2 thickness (2-4nm), and Ge content (x = 0.65-0.85) and strain engineering (epsilon(comp) = 1-3%) of the Si1-xGex are achieved. We demonstrated Ge junctionless (JL) n-FETs and photoMOSFETs (PTs) as amplifier and photodetector, respectively, for Ge receivers. L-G of 75nm JL n-FETs feature I-ON/I-OFF > 5x10(8), I-ON > 500 mu A/mu m at V-DS = 1V, T= 80K. Ge-PTs exhibit superior photoresponsivity > 1,000A/W and current gain linearity ranging from nW-mW for 850nm illumination. Size-tunable photo-luminescence (PL) of 300-1600nm (NUV-NIR) are observed on 5-100nm Ge NPs. Our gate stack of Ge NP/SiO2/Si1-xGex enables a practically achievable building block for monolithically-integrated Ge electronic and photonic ICs (EPICs) on Si.
Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices
(2018-05-18)
Liao, P. H.
;
Peng, K. P.
;
Lin, H. C.
;
George, T.
;
Li, P. W.
We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5-95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5-4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1-xGex shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1-xGex shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core 'building block' required for the fabrication of Ge-based MOS devices.
Stability of High Performance p-type SnO TFTs
(2015)
Zhong, C. W.
;
Tsai, H. Y.
;
Lin, H. C.
;
Liu, K. C.
;
Huang, T. Y.
High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.
TRANSFORMATIONAL PHENOMENON IN THE FIELD OF TAYLOR-COUETTE FLOW
(2010-11-01)
Yang, W. M.
;
Lin, H. C.
;
機械工程學系
;
Department of Mechanical Engineering
Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheres
(2019-05-01)
Chen, C. T.
;
Peng, K. P.
;
George, T.
;
Lin, H. C.
;
Li, Pei-Wen
We report the novel tunability of Ge content, thickness, and even curvature/shape in self-aligned, hemispherical-shell shaped SiGe recess channels created in Si substrates by Ge nanospheres that are proximally located to these nanoshells. The hemispherical recess SiGe nanoshells arise from the migration of Ge interstitials through the intervening oxide layer between the Ge nanospheres and the Si substrate, and their Ge content, thickness, and curvatures exhibit a monotonic dependence on the depth of penetration of the Ge nanospheres into the Si substrate. Following a unique "explosion" phenomenon in which the Ge nanosphere breaks up into multiple nanocrystallites, both the Ge content and thickness of the SiGe nanoshells are significantly decreased by reverse migration of Ge interstitials from the SiGe nanoshells to the Ge nanocrystallites. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics
(2017-01-01)
Kuo, Ming-Hao
;
Liu, B. J.
;
Huang, T. L.
;
Lin, H. C.
;
Li, Pei-Wen
We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 10(3)-10(8)A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for P-IN = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.