Browsing by Author "Lin, HN"

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Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain
(2005)
Lin, HN
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Chen, HW
;
Ko, CH
;
Ge, CH
;
Lin, HC
Channel backscattering ratios of PMOSFETs with various embedded SiGe source/drain structures are analyzed in terms of the scattering theory We found that both the backscattering ratio and injection velocity are greatly influenced by the location and recess depth of SiGe source/drain. Although the strain-enhanced injection velocity is beneficial to the current gain, the accompanying backscattering ratio increase adversely impacts the overall performance, and therefore a trade-off exists between injection velocity and backscattering ratio during the optimization of such strain technique. The mechanism of increased backscattering ratio under uniaxial compressive strain is also investigated.
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
(2005-09-01)
Lin, HN
;
Chen, HW
;
Ko, CH
;
Ge, CH
;
Lin, HC
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in kBT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms,of ballistic efficiency and injection velocity.
High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
(2003-02-01)
Lin, HC
;
Wang, MF
;
Hou, FJ
;
Lin, HN
;
Lu, CY
A simplified and improved Schottky-barrier metal-oxide-semiconductor device featuring a self-aligned offset channel length, PtSi Schottky junction, and reduced oxide thickness underneath the sub-gate was proposed and demonstrated. To alleviate the drawbacks related to the nonself-aligned offset channel length in the original version, a self-aligned offset channel length is achieved in, the new device by forming the silicide source/drain junction self-aligning to the sidewall spacers abutting the gate. This results in not only one mask count saving but also better device performance, as facilitated by, the reduced offset channel length of the self-aligned sidewall spacers. Moreover, the adoption of PtSi for the Schottky junction further improves the on-state current of p-channel operation, while a thinner oxide employed underneath the sub-gate effectively reduces the sub-gate bias needed to form the electrical junction to below 5 V. Significant improvement in on-current as well as leakage current reduction is achieved in the new improved device.
Magnetic force microscopy study of a defect-induced orthogonal magnetic structure on a cobalt film
(2000-02-01)
Lin, HN
;
Chang, CR
;
Chiou, YH
;
電子物理學系
;
Department of Electrophysics
An unusual orthogonal magnetic structure is observed on a cobalt film by magnetic force microscopy. The structure is composed of a double wall, which is caused by a surface scratch, and two perpendicular spike domains, which are caused by an internal defect. The occurrence of the structure is attributed to the generation of surface free poles due to film inhomogeneities and their redistribution to reduce the magnetostatic energy. The magnetization pattern has also been proposed to explain the observed magnetic force image. (C) 2000 Elsevier Science B.V. All rights reserved.
Magnetic force microscopy study of domain walls on a thin cobalt film
(1998-05-01)
Lin, HN
;
Chiou, YH
;
Chen, BM
;
Shieh, HPD
;
Chang, CR
Two types of 180 degrees domain walls on a 115 nm cobalt film are observed by magnetic force microscopy. The surface Neel wall on top of an asymmetric Bloch wall is found inhomogeneous. with the width estimated to be around 200 nm. The width of the rhomb-structured cross-tie wall, on the other hand, is approximately 400 nm. The coexistence of these two types of domain walls indicates that their wall energies are comparable at the film thickness. (C) 1998 American institute of Physics.
Nanoscale surface electrical properties of indium-tin-oxide films for organic light emitting diodes investigated by conducting atomic force microscopy
(2001-04-07)
Lin, HN
;
Chen, SH
;
Perng, GY
;
Chen, SA
;
電子物理學系
Nanoscale surface electrical properties of indium-tin-oxide films prepared by different cleaning methods for use as anode materials in organic light emitting diodes are studied by conducting atomic force microscopy. It is found that most of the surface area possesses a nonconducting feature, and an ultraviolet-ozone treatment produces the most nonconductive sample. The conducting regions, which distribute randomly and range from 6 to 50 nm in size, are attributed to the existence of Sn-rich oxide by a comparison with reported scanning electron microscopy images. After scanning the tip with a bias of -8 V on the nonconducting regions, oxide decomposition occurs on as-received and wet-cleaning processed samples, whereas no structure change appears on the ozone treated sample. The results indicate that the generation of stable oxide after ozone treatment is one of the origins for improved device performance. (C) 2001 American Institute of Physics.
Surface roughness measurement on microchannels by atomic force microscopy using a bent tapered fiber probe
(2000-10-01)
Chen, SH
;
Lin, HN
;
Yang, CR
;
電子物理學系
;
Department of Electrophysics
We demonstrate a high-resolution and nondestructive surface roughness measurement on microchannels by atomic force microscopy with the use of a bent tapered optical fiber probe. The probe was fabricated by a combination of laser heating-pulling and electric arc bending. Microchannels with a width of 41.5 mu m and a height of 31.9 mu m were fabricated on polycarbonate by excimer laser ablation and the resultant roughness was measured to be 4.8 nm. (C) 2000 American Institute of Physics. [S0034-6748(00)00210-0].
The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs
(2005)
Lin, HN
;
Chen, HW
;
Ko, CH
;
Ge, CH
;
Lin, HC
The influence of uniaxial process-induced strain on carrier channel backscattering in nanoscale MOSFETs is reported for the first time. It is observed that the backscattering ratio can be reduced by uniaxial tensile strain while it is increased by uniaxial compressive strain mainly due to strain-induced modulation in mean-free-path for backscattering and slight decrease in k(B)T layer thickness. Nevertheless, both strain polarities improve source-side injection velocity because of reduced carrier effective mass. Impact to current drive under uniaxial strain is analyzed in terms of mean-free-path, k(B)T layer thickness, ballistic efficiency and injection velocity.