Browsing by Author "Lin, Hsiao-Chun"

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Differential Expression of Phosphorylated ERK and c-Fos of Limbic Cortices Activities in Response to Tactile Allodynia of Neuropathic Rats
(2018-08-31)
Lin, Hsiao-Chun
;
Yen, Chen-Tung
;
交大名義發表
;
生醫電子轉譯研究中心
;
National Chiao Tung University
Neuropathic pain is due to lesion or dysfunction of the somatosensory system. Treating patients with neuropathic pain is difficult because the underlying mechanisms are understood limitedly, especially at the supraspinal level. In this study, we used two kinds of molecular markers to investigate the neuronal activity changes in the anterior cingulate cortex (ACC), insular cortex (IC), and medial prefrontal cortex (mPFC) of the neuropathic rats under tactile allodynia. We used spared nerve injury (SNI) of the sciatic nerve as the neuropathic pain model. Two weeks after SNI surgery, we applied repetitive allodynic stimulation to the conscious rats. After stimulation, the rats were sacrificed, and the immunohistochemistry of phosphorylated extracellular signal-regulated kinase (pERK) and c-Fos was performed. Quantification of immunoreactive cells was carried out by stereological method. For pERK study, the expression of pERK was significantly increased in the mPFC and IC of the SNI rats. For c-Fos study, only mPFC had elevated expression of c-Fos in the SNI rats. The analgesic, gabapentin, reversed the mechanical hyper-sensitivity and the augmented expression of limbic pERK and c-Fos in the SNI rats. Immunofluorescent staining revealed the expression of pERK or c-Fos was restricted to neurons, not glia cells. Our results demonstrated that tactile allodynia represented differential expression of pERK and c-Fos in the limbic cortices of the neuropathic rats.
Formation and characterization of high-performance silicon thin-film transistors with and without location-controlled grain boundary
(2017-10-01)
Liao, Chan-Yu
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Lin, Hsiao-Chun
;
Wang, Chao-Lung
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Lee, I-Che
;
Chou, Chia-Hsin
This paper reports the demonstration of structural effects on excimer laser crystallization (ELC) for the Si strip with a recessed-channel structure on the silicon nitride under-layer (RCS-ULN). We revealed that a single location-controlled grain boundary (GB) oriented normal to the Si strip in the middle site without any other GB in the recessed region can be attained via ELC for the RCS-ULN structures with a short recessed region between neighboring long thick regions in a narrow Si strip. This can be attributed to the effective production of a significant 2D lateral thermal gradient in the recessed region and neighboring thick regions. Consequently, the RCS-ULN TFTs fabricated at the position one-half of such an optimal recessed region can achieve a superior field-effect mobility of 670 cm(2) V-1 . s(-1) with minor performance variations since the single-crystal-like Si channel has been adopted.
Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride
(2016-09)
Liao, Chan-Yu
;
Lin, Hsiao-Chun
;
Wang, Chao-Lung
;
Lee, I-Che
;
Chou, Chia-Hsin
High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm(2)/V-s, with only minor deviation.